Supported by the National Natural Science Foundation of China under Grant Nos 60376005, 60577030, 60325413, and 60444007.
Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metalorganic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T - 380 K with hysteresis curves...
Supported by Project of High Technology Research&Development of China(863-715-011-0030),Project of Fundamental Research of China,the National Natural Science Foundation of China under Grant Nos.69636010 and 69636040,and MOTOROLA(China Inc.)Semiconductor Scholarship.
Microstructures of GaN buffer layers grown on Si(111)substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope(AFM)and a high-resolution ...
Supported by the Foundation of Chinese Academy of Sciences。
Based upon the spatially inhomogeneous Boltzmann equation in two-term approximation coupled with electromagnetic and fluid model analysis for the recently developed inductively coupled plasma sources,a self-consistent...