V-based kagome superconductors AV_(3)Sb_(5)(A=K,Rb,and Cs)host a charge density wave(CDW)and a topological nontrivial band structure,thereby providing a great platform to study the interplay of superconductivity(SC),C...
Heat in solids can be transported by various quasiparticles, making low-temperature heat transport a powerfultool for probing charge-neutral excitations in quantum materials. In recent years, ultralow-temperature heat...
supported by the Beijing Municipal Natural Science Foundation(Grant No.2212022);the National Natural Science Foundation of China(Grant Nos.51725206,52122214,and 52072403);Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020006);Jiangsu Province Carbon Peak and Neutrality Innovation Program(Industry tackling on prospect and key technology BE2022002-5)。
Aqueous Na-ion batteries(ANIBs)are considered to be promising secondary battery systems for grid-scale energy storage applications and have attracted widespread attention due to their unique merits of rich resources o...
Supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2020410);the Major Research Plan of National Natural Science Foundation of China(Grant No.91426303);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB25000000);the National Postdoctoral Program for Innovative Talents(Grant No.BX201700257).
The Nb_(3)Sn thin film cavity,having the potential to be operated at a higher temperature and higher gradient compared to the cavity made from bulk niobium,is one of the most promising key technologies for the nextgen...
Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。
We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N...
Supported by the Zhejiang Provincial Natural Science Foundation of China under Grant No LQ19A040006;the Scientific Research Fund of Zhejiang Provincial Education Department under Grant No Y201840160
We present low-temperature magnetization, magnetoresistance and specific heat measurements on the Kondo lattice compound CePt_3P under applied magnetic fields up to 9.0 T. At zero field, CePt_3P exhibits a moderately ...
Supported by the Natural Science Foundation of Jiangsu Province under Grant No BK20160292;the Natural Science Foundation of the Higher Educations Institutions of Jiangsu Province under Grant No 16KJB150013;the National Natural Science Foundation of China under Grant No U1404505;the Program for Innovative Talent in University of Henan Province under Grant No16HASTIT010
Superconducting vanadium nitride (VN) is successfully synthesized by a solid-state reaction of vanadium pentox- ide, sodium amide and sulfur in an autoclave at a relatively low temperature (240-400℃). The obtaine...
Supported by the Fundamental Research Funds for the Central Universities under Grant Nos 106112013CDJZR120015 and 106112013CDJZR120017, and the National Natural Science Foundation of China under Grant No 61334002.
We investigate negative bias temperature instability (NBTI) on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs) with low-temperature Si2H6 passivation. The Ge pMOSFETs e...
Supported by the National Basic Research Program of China under Grant No 2010CB934104, and the National Natural Science Foundation of China under Grant No 61376069.
We investigate the impact of CHFa plasma treatment on the performance of AIGaN/GaN HEMT (F-HEMT) by a temperature-dependent measurement in the thermal range from 6 K to 295 K. Tlle temperature dependence of the tran...
Supported by the National Science Fund for Distinguished Young Scholars(No 60925017);the National Natural Science Foundation of China(Nos 10990100,60836003 and 60976045);Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-Discipline Foundation.
An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature(LT)GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor depositio...