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MEMORY: 作品数：1598被引量：1522H指数：14; 导出分析报告; 相关领域：自动化与计算机技术更多>>; 相关作者：张春才许硕贵齐煜王秋根康庆林更多>>; 相关机构：中国科学院国防科学技术大学东南大学复旦大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

The role of immune cells in obesogenic memory被引量：1: 《Cellular & Molecular Immunology》2020年第8期884-886,共3页Minli Sun Shang Zheng Xiang Gao Zhaoyu Lin; This work was supported by the Ministry of Science and Technology of China(grant 2018YFA0801100);the National Natural Science Foundation of China(grant 31772550).; Obesity is a serious chronic disease and worldwide public health problem.According to data from the World Health Organization(WHO),more than 650 million adults in the world were obese and three times more individuals ...; 关键词：OBESITY DRUGS INFLAMMATION

RSMC:A Safety Model Checker for Concurrency and Memory Safety of Rust被引量：1: 《Wuhan University Journal of Natural Sciences》2020年第2期129-138,共10页YAN Fei WANG Qizhong ZHANG Liqiang CHEN Yasha; Supported by the National Basic Research Program of China(973 Program)(2014CB340601)。; Rust is a system-level programming language that provides thread and memory safety guarantee through a suite of static compiler checking rules and prevents segmentation errors.However,since compiler checking is too st...; 关键词：RUST memory safety concurrency safety model checking

An Integrated Analysis of Risk Factors of Cognitive Impairment in Patients with Severe Carotid Artery Stenosis被引量：17: 《Biomedical and Environmental Sciences》2018年第11期797-804,共8页LUO Ru Tao WANG Pei Jiong DENG Xiao Feng ZHOU Shu Jie ZHAO Meng QIAN Jing ZHANG Dong WANG Rong ZHANG Yan; supported by the capital health research and development of special project [2016-2-2043];the ‘13th Five-Year Plan’ National Science and Technology supporting plan [2015BAI12B04];the National Key Technology Research and Development Program of the Ministry of Science and Technology of China [2013BAI09B03];Beijing Municipal Administration of Hospitals’ Mission Plan [SML20150501];Beijing Institute for Brain Disorders [BIBD-PXM2013_014226_07_000084];the Program of Beijing Municipal Science and Technology Commission [Z13110200680000];the Program of the National Natural Science Foundation of China [81371292]; Objective To investigate cognitive dysfunction in patients with carotid artery stenosis(CAS) and potential risk factors related to cognitive-especially memory-dysfunction. Methods Forty-seven patients with carotid art...; 关键词：Carotid artery stenosis Cognitive impairment MEMORY

CD4+T cells memorize obesity and promote weight regain被引量：3: 《Cellular & Molecular Immunology》2018年第6期630-639,共10页Jianghuan Zou Beibei Lai Mingzhu Zheng Qin Chen Shujun Jiang Anying Song Zan Huang Peiliang Shi Xin Tu Di Wang Linrong Lu Zhaoyu Lin Xiang Gao; This work was supported by the National Natural Science Foundation of China(Grant 31301217);the Ministry of Science and Technology of China(Grants 2015BAI08B02 and 2014BAI02B01).; Body weight regain often causes failure of obesity therapies while the underlying mechanism remains largely unknown.In this study,we report that immune cells,especially CD4+T cells,mediate the‘memory’of previous obe...; 关键词：CD4+T cell IMMUNODEFICIENCY METABOLISM obesity memory weight regain

A Double Network Hydrogel with High Mechanical Strength and Shape Memory Properties被引量：3: 《Chinese Journal of Chemical Physics》2018年第3期350-358,368,共10页Lei Zhu Chun-ming Xiong Xiao-fen Tang Li-jun Wang Kang Peng Hai-yang Yang; supported by the National Natural Science Foundation of China (No.51273189);the National Science and Technology Major Project of the Ministry of Science and Technology of China (No.2016ZX05016),the National Science and Technology Major Project of the Ministry of Science and Technology of China (No.2016ZX05046); Double network(DN)hydrogels as one kind of tough gels have attracted extensive at-tention for their potential applications in biomedical and load-bearing fields.Herein,we import more functions like shape memory into t...; 关键词：DOUBLE NETWORK HYDROGEL WEAK POLYELECTROLYTE High mechanical strength Shape MEMORY properties

Graphene resistive random memory - the promising memory device in next generation: 《Chinese Physics B》2017年第3期160-173,共14页王雪峰赵海明杨轶任天令; Project supported by the National Natural Science Foundation of China(Grant Nos.61574083 and 61434001);the National Basic Research Program of China(Grant No.2015CB352101);the National Key Research and Development Program of China(Grant No.2016YFA0200404);the National Key Project of Science and Technology of China(Grant No.2011ZX02403-002);Special Fund for Agroscientic Research in the Public Interest of China(Grant No.201303107);the Independent Research Program of Tsinghua University,China(Grant No.2014Z01006);Advanced Sensor and Integrated System Lab of Tsinghua University Graduate School at Shenzhen,China(Grant No.ZDSYS20140509172959969); Graphene-based resistive random access memory （GRRAM） has grasped researchers＇ attention due to its merits com- pared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can...; 关键词：graphene-based resistive random access memory graphene oxide （GO）/reduced graphene oxide（rGO） resistive switching GRAPHENE

A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory被引量：1: 《Science China Earth Sciences》2016年第12期188-197,共10页Zhiyuan LUN Gang DU Kai ZHAO Xiaoyan LIU Yi WANG; supported by National Natural Science Foundation of China (Grant No. 91230107);National Basic Research Program of China (973) (Grant No. 2013CBA01604);National High Technology Research and Development Program of China (863) (Grant No. 2015AA016501); This work presents a self-consistent two-dimensional(2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the...; 关键词：charge trapping memory semiconductor device modeling 2-D charge transport 3-D NAND flash device modeling and simulation

Construction of a genetic conditional learning system in Escherichia coli: 《Science China(Information Sciences)》2015年第11期172-177,共6页CHEN Mei XU Jin; supported by National Basic Research Program of China(973 Program)(Grant Nos.2013CB3296-01,2013CB329602);National Natural Science Foundation of China(Grant Nos.61127005,60910002,61379059,61472333,61402382,30970960);"Top University,Top Discipline"Funds for Minzu University of China(Grant No.10301-0150200518); Currently, there are a lot of man-made biomolecular computing systems. However, it is rare to see man-made biomolecular intelligence system. Learning ability is one of the basic abilities of intelligence. Many organis...; 关键词：biomolecular computing artificial intelligence conditional learning MEMORY RIBOSWITCH DNA recombinase

Impact of Band-Engineering to Performance of High-k Multilayer Based Charge Trapping Memory: 《Chinese Physics Letters》2015年第8期189-192,共4页刘利芳潘立阳张志刚许军; Supported by the National Basic Research Program of China under Grant No 2011CBA00602;the National Key Scientific and Technological Project under Grant No 2013ZX01032001-001-003; Impact of band-engineering to the performance of charge trapping memory with HfO2/Ta2O5/HfO2 （HTH） as the charge trapping layer is investigated. Compared with devices with the same total HfO2 thickness, structures w...; 关键词：Impact of Band-Engineering to Performance of High-k Multilayer Based Charge Trapping Memory HTH CTL Ta

Memory Behaviors Based on ITO/Graphene Oxide/Al Structure: 《Chinese Physics Letters》2015年第7期138-141,共4页仪明东郭佳林胡波夏先海范曲立解令海黄维; Supported by the National Basic Research Program of China under Grant Nos 2012CB723402 and 2014CB648300;the National Natural Science Foundation of China under Grant Nos 61204095 and 61475074;the National Science Fund for Excellent Young Scholars under Grant No 21322402;the Natural Science Foundation of Jiangsu Province under Grant No BK2012431,the Natural Science Foundation of the Education Committee of Jiangsu Province under Grant No 14KJB510027;the Ministry of Education of China under Grant No IRT1148;the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions; We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electr...; 关键词：GO Memory Behaviors Based on ITO/Graphene Oxide/Al Structure ITO AL

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