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MOS: 作品数：2837被引量：5069H指数：21; 导出分析报告; 相关领域：电子电信医药卫生更多>>; 相关作者：周晖刘理天李长生李国强陈建敏更多>>; 相关机构：中国科学院清华大学东南大学西安电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中央高校基本科研业务费专项资金中国博士后科学基金更多>>

Displacement damage effects in MoS_(2)-based electronics: 《Journal of Semiconductors》2024年第12期152-158,共7页Kaiyue He Zhanqi Li Taotao Li Yifu Sun Shitong Zhu Chao Wu Huiping Zhu Peng Lu Xinran Wang Maguang Zhu; supported by the National Natural Science Foundation of China (Grant No.62301247);the Fundamental Research Funds for the Central Universities (Grant No.2024300427);the Natural Science Foundation of Jiangsu Province (Grant No.BK20230778);the Key Research and Development Program of Jiangsu Province (Grant No.BK20232009);the Innovation Leading Talent Foundation of Suzhou (Grant No.ZXL2023164);Guangdong Major Project of Basic Research (Grant No.2021B0301030003);Jihua Laboratory (Project No.X210141TL210).; Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume,MoS_(2)-based field-effect tran-sistors(FETs)are regarded as optimal components for radiation-hardened integrated circuits(ICs),w...; 关键词：MoS_(2) field effect transistor displacement damage effect radiation hardness proton radiation

Simulation of MoS_(2)stacked nanosheet field effect transistor: 《Journal of Semiconductors》2022年第8期41-45,共5页Yang Shen He Tian Tianling Ren; supported in part by National Natural Science Foundation of China under Grant 62022047,Grant 61874065,Grant U20A20168 and Grant 51861145202;in part by the National Key R&D Program under Grant 2021YFC3002200 and Grant 2020YFA0709800;in part by Fok Ying-Tong Education Foundation under Grant 171051;in part by Beijing Natural Science Foundation(M22020);in part by Beijing National Research Center for Information Science and Technology Youth Innovation Fund(BNR2021RC01007);in part by State Key Laboratory of New Ceramic and Fine Processing Tsinghua University(No.KF202109);in part by Tsinghua-Foshan Innovation Special Fund(TFISF)(2021THFS0217);in part by the Research Fund from Beijing Innovation Center for Future Chip;the Independent Research Program of Tsinghua University under Grant 20193080047;supported by the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences.; Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties.Vertical stacked nanosheet FET(NSFET)based on MoS_(2)are proposed and studied by Poisson equation solver...; 关键词：MoS_(2) stacked nanosheet GAA TCAD simulation

Research progress and challenges of two dimensional MoS_2 field effect transistors被引量：2: 《Journal of Semiconductors》2018年第10期23-33,共11页N Divya Bharathi K Sivasankaran; This review paper gives an outline of the recent research progress and challenges of 2D TMDs material MoS2 based device, that leads to an interesting path towards approaching the electronic applications due to its siz...; 关键词：TMDs material band structure MOBILITY on/off current ratio contact resistance

Improved interfacial properties of GaAs MOS capacitor with NH3-plasma-treated ZnON as interfacial passivation layer: 《Journal of Semiconductors》2017年第9期56-61,共6页Jingkang Gong Jingping Xu Lu Liu Hanhan Lu Xiaoyu Liu Yaoyao Feng; supported by the National Natural Science Foundation of China(Nos.61176100,61274112,61404055); The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared...; 关键词：GaAs MOS ZnON interfacial passivation layer NH3-plasma treatment

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications: 《Journal of Semiconductors》2017年第6期66-74,共9页M.Benhaliliba C.E.Benouis M.S.Aida A.Ayeshamariam; supported by the Algerian Ministry of High Education and Scientific Research through the CNEPRU Project(No.B00L002UN310220130011);the Anvredet Project N°18/DG/2016 “Projet Innovant:Synthèse et Caractérisation de Films Semiconducteurs Nanostructurés et Fabrication de Cellule Solaire”; Control of the electronic parameters on a novel metal–oxide–semiconductor（MOS）diode by indium doping incorporation is emphasized and investigated.The electronic parameters,such as ideality factor,barrier height（B...; 关键词：indium incorporation MOS diode current-voltage measurements capacitance-voltage characteristics microelectronic parameters

Enhancement of photodetection based on perovskite/MoS_2 hybrid thin film transistor被引量：3: 《Journal of Semiconductors》2017年第3期94-99,共6页Fengjing Liu Jiawei Wang Liang Wang Xiaoyong Cai Chao Jiang Gongtang Wang; Project supported by the National Natural Science Foundation of China(Nos.11374070,61327009 214320051);the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDA09040201); Perovskite/MoS2hybrid thin film transistor photodetectors consist of few-layered MoS2and CH3NH3PbI3film with various thickness prepared by two-step vacuum deposition.By implementing perovskite CH3NH3PbI3film onto the ...; 关键词：perovskite MoS2 photodetector

Novel through-silicon vias for enhanced signal integrity in 3D integrated systems: 《Journal of Semiconductors》2016年第10期93-98,共6页方孺牛孙新缪旻金玉丰; Project supported by the National Basic Research Program of China (No. 2015CB0572);the Importation and Development of HighCaliber Talents Project of Beijing Municipal Institutions (No. CIT&TCD20150320);the National Natural Science Foundation of China (No. 61176102); In this paper, a new type of through-silicon via（TSV） for via-first process namely bare TSV, is proposed and analyzed with the aim of mitigating noise coupling problems in 3D integrated systems for advanced technolo...; 关键词：through-silicon-vias CROSSTALK MOS capacitance Poisson＇s equation

Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer被引量：1: 《Journal of Semiconductors》2016年第5期43-47,共5页袁文宇徐静平刘璐黄勇程智翔; Project supported by the National Natural Science Foundation of China(Nos.6127411261176100,61404055); The interracial and electrical characteristics of Ge metal-oxide-semiconductor （MOS） devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental result...; 关键词：Ge MOS NH3 plasma interface properties ZrON/GeON dual passivation layer

Theoretical study of defect impact on two-dimensional MoS_2被引量：1: 《Journal of Semiconductors》2015年第12期18-23,共6页Anna V.Krivosheeva Victor L.Shaposhnikov Victor E.Borisenko Jean-Louis Lazzari Chow Waileong Julia Gusakova Beng Kang Tay; supported by the Joint BRFFR-CNRS Project (No. F15F-003);the Visby Program: scholarships for PhD studies and postdoctoral research in Sweden; Our theoretical findings demonstrate for the first time a possibility of band-gap engineering of monolayer MoS2 crystals by oxygen and the presence of vacancies. Oxygen atoms are revealed to substitute sulfur ones, fo...; 关键词：two-dimensional crystal molybdenum disulfide band gap VACANCY OXYGEN

A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior被引量：3: 《Journal of Semiconductors》2015年第2期92-98,共7页刘松单光宝谢成民杜欣荣; Project supported by the National Defense Basic Scientific Research Program of China(No.A0320132012); The analytical model of voltage-controlled MOS capacitance of tapered through silicon via （TSV） is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG f...; 关键词：3D IC TSV TSV electrical model MOS effect transmission line

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