AlGaN/GaN异质结构欧姆接触的研制  

Design and Fabrication of Ohmic Contact on AlGaN/GaN Heterostructure

作　　者：焦刚[1] 曹春海[1] 薛舫时[1] 杨立杰[1] 王泉慧[1] 王柏年[1] 金龙[1] 张卫红[1] 沈波[2] 周玉刚[2] 郑有炓[2] 

机构地区：[1]南京电子器件研究所,南京210016 [2]南京大学物理系,南京210093

出　　处：《固体电子学研究与进展》2004年第1期142-144,共3页Research & Progress of SSE

摘　　要：研究了 Ga N高温宽禁带半导体外延层上欧姆接触的制备工艺 ,讨论了几种测试方法的优缺点 ,并根据器件制作的工艺兼容性 ,在 n-Ga N样品上获得了 4× 1 0 - 6 Ω·cm2的欧姆接触 ,在 Al Ga N/Ga N异质结构样品上获得了 4× 1 0 - 4Ω· cm2 的欧姆接触。实验结果表明 ,Al Ga N/Ga N上低阻欧姆接触的制备及其工艺兼容性是Ga NThis paper reports the fabrication technique of ohmic contact on GaN and discusses the relative merits for different testing methods. By using the technique compatible with devices fabrication, the specific contact resistance has been achieved to 4×10 -6 Ω·cm 2 on n-type GaN, and to 4×10 -4 Ω·cm 2 on AlGaN/GaN heterostructure. The experimental results indicate that the fabrications of low ohmic contact resistance on AlGaN/GaN and the technique compatibility are the technical difficulties for the GaN heterostructure field effect transistor(HFET).

关 键 词：欧姆接触 工艺兼容性 ALGAN/GAN 异质结构 HFET 

分 类 号：TN305.93[电子电信—物理电子学]