Project supported by the National Natural Science Foundation of China (No.60476039);the Director Foundation of Institute of Microelectronics of Chinese Academy of Sciences (No.5408SA011001)
It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the ex...
The /-V-(T) characteristic curves of p-n junctions with the forward voltage as the independent variable, the logarithm of forward current as the dependent variable, and the junction temperature as the parameter, alm...