supported by the National Natural Science Foundation of China (No.60676039);the National High Technology Research and Development Program of China (No.2007AA06Z112);Research Fund for the Doctoral Program of Higher Education of China (No.20060183030);the Science and Technology Department of Jilin Province (No.20070709)
The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are ...