supported by the National Basic Research Program of China(No.2009CB320207);the Chinese Academy of Sciences (No.YYY J-1123-3)
We present an InP-based heterodimensional Schottky diode(HDSD),which has so far never been reported in the literature.Compared to a GaAs-based HDSD,the InP-based HDSD is expected to have better high frequency perfor...