国家自然科学基金(60876050)

作品数：5被引量：6H指数：1
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相关作者：曹琳臧源蒲红斌李连碧更多>>
相关机构：西安永电电气有限责任公司西安理工大学更多>>
相关期刊：《Chinese Physics B》《固体电子学研究与进展》《Journal of Semiconductors》更多>>
相关主题：4H-SICSUPERJUNCTIONSICTRANSISTOR英文更多>>
相关领域：电子电信化学工程更多>>
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浮结位置对4H-SiC浮结结势垒肖特基二极管特性的影响(英文)
《固体电子学研究与进展》2014年第4期315-320,共6页曹琳 王富珍 吴磊 
国家自然科学基金资助项目(60876050)
同质外延层厚度、铝离子注入深度及光刻偏差会导致4H-SiC浮结结势垒肖特基二极管中浮结位置偏离最优值,器件特性变差。通过数值模拟的方法对浮结横向及纵向位置偏差对其电学特性的影响进行了研究。纵向方向,两个梯形电流分布使得通态比...
关键词：碳化硅 浮结 位置偏差 数值模拟 
Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery被引量：4
《Chinese Physics B》2012年第1期449-452,共4页Cao Lin Pu Hong-Bin Chen Zhi-Ming Zang Yuan 
Project supported by the National Natural Science Foundation of China(Grant No.60876050);the Research Fund for Excellent Doctor Degree Thesis of Xi'an University of Technology,China
In this paper, a 4H-SiC semi-superjunction （S J） Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ struct...
关键词：4H-SIC semi-superjunction Schottky barrier diode softness factor 
Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer被引量：1
《Chinese Physics B》2011年第5期369-373,共5页蒲红斌 曹琳 陈治明 任杰 
Project supported by National Natural Science Foundation of China (Grant No. 60876050);Special Scientific Research Project of Shaanxi Provincial Departments of Education,China (Grant No. 08JK367);the Research Fund for Excellent Doctor DegreeThesis of Xi’an University of Technology,China
A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator. This paper discusses the electric field distribution, spectral resp...
关键词：SiCGe/SiC TRANSISTOR charge-compensation responsivity 
An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure被引量：1
《Journal of Semiconductors》2010年第4期17-19,共3页蒲红斌 曹琳 任杰 陈治明 南雅公 
supported by the National Natural Science Foundation of China(No.60876050);the Special Scientific Research Project of Shaan Xi Provincial Department of Education,China(No.08JK367).
An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance ...
关键词：SiC/SiCGe SUPERJUNCTION optically controlled transistor 
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