国家自然科学基金(60876063)

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GaN-based substrates and optoelectronic materials and devices被引量：4
《Chinese Science Bulletin》2014年第12期1201-1218,共18页Guoyi Zhang Bo Shen Zhizhong Chen Xiaodong Hu Zhixin Qin Xinqiang Wang Jiejun Wu Tongjun Yu Xiangning Kang Xingxing Fu Wei Yang Zhijian Yang Zhizhao Gan 
supported by the National Key Basic R&D Project of China(TG2011CB301900 and TG2012CB619304);the project of National High Technology of China(2011AA03A103);the National Natural Science Foundation of China(61076012 and60876063);the Beijing Municipal Science & Technology Commission(D111100001711002)
In order to solve the problems of GaN heteroepitaxy on sapphire substrate,some techniques were explored.Freestanding GaN substrates have been made by hydride vapor phase epitaxy(HVPE),laser lift-off(LLO),and chemical ...
关键词：ALGAN 蓝宝石衬底 光电子材料 MOCVD生长 氢化物气相外延 激光二极管 垂直结构 器件 
Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy被引量：2
《Chinese Physics B》2011年第9期439-444,共6页杜彦浩 吴洁君 罗伟科 John Goldsmith 韩彤 陶岳彬 杨志坚 于彤军 张国义 
Project supported by the National Basic Research Program of China (Grant No.2007CB307004);the National High Technology Research and Development Program of China (Grant No.2009AA03A198);the National Natural Science Foundation of China (Grant Nos.60776041 61076012,60876063,and 60676032);the Science and Technology Fund of Beijing,China (Grant No.Z101103050410003)
Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, pho...
关键词：GAN hydride vapour phase epitaxy HETEROEPITAXY 
Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction
《Science China(Technological Sciences)》2010年第3期769-771,共3页QI ShengLi,CHEN ZhiZhong,SUN YongJian,FANG Hao,TAO YueBin,SANG LiWen,TIAN PengFei,DENG JunJing,ZHAO LuBing,YU TongJun,QIN ZhiXin&ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China 
supported by the National Natural Science Foundation of China(Grant Nos.60676032,60406007,60607003,60577030,60876063 and 60476028);the National Basic Research Program of China("973" Project)(Grant No.2007CB307004)
Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-face GaN dodecagonal pyramids has been fabricated on laser-lift-off N-face GaN by hot phosphor acid etching.The dodecag...
关键词：GAN N FACE WET ETCHING H3PO4 dodecagonal PYRAMID light extraction 
Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes
《Science China(Technological Sciences)》2010年第2期301-305,共5页TIAN PengFei, SUN YongJian, CHEN ZhiZhong, QI ShengLi, DENG JunJing, YU TongJun, QIN ZhiXin & ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 
supported by the National Natural Science Foundation of China (Grant Nos. 60876063, 60676032, 60406007 and 60577030);the National Basic Research Program of China ("973" Project) (Grant No. TG2007CB307004)
Au/Sn solder bonding on Si substrates was used to fabricate the GaN-based vertical structure light emitting diodes (VSLEDs). The phase reaction of Au/Sn solder under different bonding conditions was investigated by th...
关键词：GaN LED BONDING Au/Sn PHASE 
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