国家自然科学基金(60376011)

作品数：4被引量：3H指数：1
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相关作者：陈治明蒲红斌任萍更多>>
相关机构：西安理工大学更多>>
相关期刊：《Journal of Rare Earths》《Chinese Physics B》《Journal of Semiconductors》更多>>
相关主题：SICLOW-PRESSURECHEMICAL_VAPOUR_DEPOSITIONTHROW更多>>
相关领域：电子电信理学更多>>
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Island-growth of SiCGe films on SiC被引量：3
《Chinese Physics B》2007年第11期3470-3474,共5页李连碧 陈治明 林涛 蒲红斌 李青民 李佳 
Project supported by the National Natural Science Foundation of China （Grant No 60376011） and the Specialized Research Fund for the Doctoral Program of High Education, China （Grant No 20040700001）.
SiCGe ternary alloys have been grown on SiC by hot-wall low-pressure chemical vapour deposition. It has been found that the samples cxhibit an island configuration, and the island growth of SiCGe epilayer depends on t...
关键词：SIC SiCGe island-growth hot-wall low-pressure chemical vapour deposition 
Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure
《Journal of Semiconductors》2006年第2期254-257,共4页陈治明 任萍 蒲红斌 
国家自然科学基金(批准号:60376011,60576044);高等学校博士学科点专项科研基金(批准号:20040700001)资助项目~~
A light-activated Darlington heterojunction transistor based on a SiCGe/3C-SiC hetero-structure is proposed for anti-EMI（electromagnetic interference） applications. The performance of the novel power switch is simul...
关键词：SiCGe SIC hetero-junction Darlington transistor 
Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC
《Journal of Rare Earths》2006年第z1期19-22,共4页Tan Changxing Chen Zhiming Pu Hongbin Lu Gang Li Lianbi 
Project supported by the National Natural Science Foundation of China (60376011 and 60576044) and Specialized Research Fund for the Doctoral Program of High Education (20040700001)
Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon source, respectively, while H2 was employed as th...
关键词：SiCGe SiC BUFFER LAYER hetero-junction LPCVD 
SiC光控异质结达林顿晶体管的导通机理
《Journal of Semiconductors》2005年第z1期143-146,共4页蒲红斌 陈治明 
国家自然科学基金资助项目(批准号:60376011)
利用窄能隙SiCGe三元合金,采用SiCGe/SiC pn异质结产生基极光电流方法,提出了新型SiC光控达林顿异质结晶体管功率开关结构,并用二维数值模拟软件对其导通机理进行了研究.分析结果表明,SiC光控异质结达林顿晶体管在近红外区内具有明显光...
关键词：SIC 光控达林顿晶体管 异质结 功率开关 
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