云南高校图书馆联盟文献共享服务平台- 国家自然科学基金(60577030)

国家自然科学基金(60577030): 作品数：14被引量：24H指数：3; 导出分析报告; 相关作者：张国义陈志忠康香宁包魁章蓓更多>>; 相关机构：北京大学中国科学院更多>>; 相关期刊：《Chinese Physics B》《Chinese Optics Letters》《Science China(Technological Sciences)》《发光学报》更多>>; 相关主题：GANLIGHT_EMITTING_DIODESGAN基发光二极管GALLIUM氮化镓更多>>; 相关领域：电子电信理学更多>>

Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al_(0.4)Ga_(0.6)N: 《Chinese Physics B》2011年第4期369-373,共5页李涛秦志新许正昱沈波张国义; supported by the National Natural Science Foundation of China (Grant Nos. 10774001,60736033,60876041 and 60577030);National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607);the National Key Basic Research and Development Program of China (973 Project) (Grant No. TG2007CB307004); This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au （15 nm/85 nm/20 nm/95 nm） contacts on n-A10.4Ga0.6N. Contacts annealed at 700 ℃ and higher temperatures show Ohmic...; 关键词：Ohmic contact VANADIUM transmission electron microscopy energy dispersive x-ray spectrum

GaN基p-i-n型雪崩探测器的制备与表征(英文)被引量：2: 《发光学报》2011年第3期262-265,共4页李广如秦志新桑立雯沈波张国义; Projects supported by National Natural Science Foundation of China Grant(10774001,60736033,60876041,60577030)~~; 制备和表征了p-i-n型的GaN基雪崩探测器。器件在-5 V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA。响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量。C-V测...; 关键词：紫外探测器雪崩碰撞电离

Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction: 《Science China(Technological Sciences)》2010年第3期769-771,共3页QI ShengLi,CHEN ZhiZhong,SUN YongJian,FANG Hao,TAO YueBin,SANG LiWen,TIAN PengFei,DENG JunJing,ZHAO LuBing,YU TongJun,QIN ZhiXin&ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China; supported by the National Natural Science Foundation of China(Grant Nos.60676032,60406007,60607003,60577030,60876063 and 60476028);the National Basic Research Program of China("973" Project)(Grant No.2007CB307004); Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-face GaN dodecagonal pyramids has been fabricated on laser-lift-off N-face GaN by hot phosphor acid etching.The dodecag...; 关键词：GAN N FACE WET ETCHING H3PO4 dodecagonal PYRAMID light extraction

Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes: 《Science China(Technological Sciences)》2010年第2期301-305,共5页TIAN PengFei, SUN YongJian, CHEN ZhiZhong, QI ShengLi, DENG JunJing, YU TongJun, QIN ZhiXin & ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China; supported by the National Natural Science Foundation of China (Grant Nos. 60876063, 60676032, 60406007 and 60577030);the National Basic Research Program of China ("973" Project) (Grant No. TG2007CB307004); Au/Sn solder bonding on Si substrates was used to fabricate the GaN-based vertical structure light emitting diodes (VSLEDs). The phase reaction of Au/Sn solder under different bonding conditions was investigated by th...; 关键词：GaN LED BONDING Au/Sn PHASE

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films: 《Chinese Physics B》2010年第1期520-523,共4页赵璐冰于彤军吴洁君杨志坚张国义; Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018); Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...; 关键词：non-polar GaN V/III ratio ANISOTROPY migration length

Strain effects on the polarized optical properties of InGaN with different In compositions: 《Chinese Physics B》2009年第6期2603-2609,共7页陶仁春于彤军贾传宇陈志忠秦志新张国义; Project supported by the National Natural Science Foundation of China (Grant Nos 60676032,60577030 and 60776042);National Key Basic Research Special Foundation of China (Grant No TG 2007CB307004); Strain effects on the polarized optical properties of c-plane and m-plane InxGa1-xN were discussed for different In compositions （x = 0, 0.05, 0.10, 0.15） by analyzing the relative oscillator strength （ROS） and en...; 关键词：GaN polarization degree M-PLANE relative oscillator strength

Optimization of top polymer gratings to improve GaN LEDs light transmission被引量：5: 《Chinese Optics Letters》2008年第10期788-790,共3页Xiaomin Jin 章蓓代涛魏伟康香宁张国义 Simeon Trieu Fei Wang; the Department of the Navy,Office of Naval Research,under Award # N00014-07-1-1152,USA;the"Chunhui"Exchange Research Fellow 2008,Ministry of Education of China,the National"973"Program of China(No.2007CB307004);the National"863"Program of China(No.2006AA03A113);and the National Natural Science Foundation of China(No.60276032,60577030,and 60607003); We present a grating model of two-dimensional （2D） rigorous coupled wave analysis （RCWA） to study top diffraction gratings on light-emitting diodes （LEDs）. We compare the integrated-transmission of the non-grati...; 关键词：ABS resins Gallium alloys Gallium nitride Light emitting diodes Light transmission Optical properties Organic light emitting diodes (OLED) Polymers Semiconducting gallium TRANSPARENCY

InGaN蓝光与CdTe纳米晶基白光LED被引量：3: 《发光学报》2008年第6期1071-1075,共5页易觉民李红博唐芳琼宋振阳杨志坚张国义; 国家自然科学基金(60577030,60776041);国家自然科学基金重点(60736001);国家重大基础研究“973”计划(2007CB307004)资助项目; 报道了倒装焊InGaN蓝光LED与黄光CdTe纳米晶的复合结构。利用蓝光作为CdTe纳米晶的激发源,通过光的下转换机制,将部分蓝光转化为黄光,复合发射出白光。室温下正向驱动电流为10mA时,发光色品坐标为x=0.29,y=0.30。实验表明,该复合结构白...; 关键词：氮化镓白光发光二极管碲化镉纳米晶纳米荧光粉

Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode: 《Chinese Physics B》2008年第4期1274-1279,共6页靳晓民章蓓代涛张国义; Project supported by the Wang Faculty Fellowship at Peking University,Beijing,China,2006-2007 through California State University (CSU) International Programs USA;the National Basic Research Program of China (Grant No 2007CB307004);the National High Technology Research and Development Program of China (Grant No 2006AA03A113);the National Natural Science Foundation of China (Grant Nos 60276034,60577030 and 60607003); We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride （GaN） laser diodes （LDs） theoretically. For the particular LD structure, composed of approximate 4 μm t...; 关键词：GaN laser optical mode coupling optical confinement factor

Optimization of gallium nitride-based laser diode through transverse modes analysis: 《Chinese Optics Letters》2007年第10期588-590,共3页Xiaomin Jin 章蓓 Liang Chen 代涛张国义; supported by the"973"Program of China(No.TG2007CB307004);the"863"Program of China(No.863-2006AA03A113);the National Natural Science Foundation of China(No.60276034,60577030,and 60607003).; We investigate the transverse mode pattern in GaN quantum-well （QW） laser diode （LD） by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is...; 关键词：Gallium nitride Laser modes OPTIMIZATION Semiconductor quantum wells

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