A method for estimating the defects density in SiC bulk crystals by defect-selective etching in molten KOH has already been successfully demonstrated. In this paper, the results of applying this technique to bulk SiC ...
A light-activated Darlington heterojunction transistor based on a SiCGe/3C-SiC hetero-structure is proposed for anti-EMI(electromagnetic interference) applications. The performance of the novel power switch is simul...