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国家重点基础研究发展计划(2014CB339900): 作品数：20被引量：30H指数：4; 导出分析报告; 相关作者：杨银堂段宝兴袁嵩袁小宁曹震更多>>; 相关机构：西安电子科技大学中国科学院国网信息通信产业集团有限公司北京汇通金财信息科技有限公司更多>>; 相关期刊：《物理学报》《Journal of Semiconductors》《The Journal of China Universities of Posts and Telecommunications》《Chinese Physics B》更多>>; 相关主题：击穿电压比导通电阻功率器件PHEMTGAAS更多>>; 相关领域：电子电信理学化学工程自动化与计算机技术更多>>

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析被引量：4: 《物理学报》2017年第16期239-245,共7页郭海君段宝兴袁嵩谢慎隆杨银堂; 国家重点基础研究发展计划(批准号:2014CB339900;2015CB351900);国家自然科学基金重点项目(批准号:61234006;61334002)资助的课题~~; 为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏...; 关键词：高电子迁移率晶体管电场调制二维电子气击穿电压

基于遍历干扰对齐的MIMO干扰信道的自由度可达方案设计: 《青岛科技大学学报（自然科学版）》2017年第4期113-118,共6页欧清海何清素曾令康于华东李温静刘芳; 国家973计划项目(2014CB339900);国家自然科学基金项目(61401042);国家电网公司科技项目(526800150054); 针对K-user MIMO干扰信道,当信道为时变信道或频选信道时,提出了一种基于遍历干扰对齐的自由度上限可达方案,该方案仅通过使用简单的线性预编码和有限个符号设计,就可以获得自由度上限。进而对提出的遍历干扰对齐方案能够达到的系统和...; 关键词：自由度遍历干扰对齐干扰信道多入多出

具有纵向辅助耗尽衬底层的新型横向双扩散金属氧化物半导体场效应晶体管被引量：1: 《物理学报》2017年第7期382-388,共7页赵逸涵段宝兴袁嵩吕建梅杨银堂; 国家重点基础研究发展计划(批准号:2014CB339900;2015CB351906);国家自然科学基金重点项目(批准号:61234006;61334002)资助的课题~~; 为了优化横向双扩散金属氧化物半导体场效应晶体管(lateral double-diffused MOSFET,LDMOS)的击穿特性及器件性能,在传统LDMOS结构的基础上,提出了一种具有纵向辅助耗尽衬底层(assisted depletesubstrate layer,ADSL)的新型LDMOS.新加入...; 关键词：辅助耗尽衬底层横向双扩散功率器件击穿电压优值

A 600W Broadband Doherty Power Amplifier with Improved Linearity for Wireless Communication System: 《China Communications》2017年第2期21-29,共9页Jing Li Wenhua Chen Qian Zhang; supported in part by the National Basic Research Program of China (Grant No. 2014CB339900);the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. Grant 2015ZX03002002 and Grant 2016ZX03002009, and Grant 2016ZX03001005);the 863 program (Grant No. 2015AA010802);the National Natural Science Foundation of China (Grant No. 61522112, 61331003);the New Century Excellent Talents in University (NCET); An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impe...; 关键词：AMPLIFIER inverted Doherty LINEARITY high power

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor: 《Journal of Semiconductors》2016年第12期40-44,共5页刘阳柴常春史春蕾樊庆扬刘彧千; Project supported by the National Basic Research Program of China(No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(No.2015-0214.XY.K); Simulations are carried out to explore the possibility of achieving high breakdown voltage of Gain HEMT （high-electron mobility transistor）. GaN cap layers with gradual increase in the doping concentration from 2 x ...; 关键词：GaN HEMT optimization design breakdown voltage cap layer

Low sampling rate technique based frequency-domain random demodulation for broadband digital predistortion: 《The Journal of China Universities of Posts and Telecommunications》2016年第6期47-52,共6页Zhao Jingmei Liu Yuan'an Yu Cuiping Yu Jianguo; supported by the National Basic Research Program of China (2014CB339900);the National Hi-Tech Research and Development Program of China (2015AA016801);the National Natural Science Foundation of China (61327806); This paper proposes a combination technique of the frequency-domain random demodulation（FRD） and the broadband digital predistorter（DPD）. This technique can linearize the power amplifiers（PAs） at a low sampling ...; 关键词：power amplifiers digital predistortion CS frequency-domain random demodulation

Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits: 《Chinese Physics B》2016年第11期619-624,共6页刘晓贤朱樟明杨银堂丁瑞雪李跃进; Project supported by the National Basic Research Program of China(Grant No.2014CB339900);the National Natural Science Foundation of China(Grant Nos.61376039,61334003,61574104,and 61474088); In this paper,ground-signal-ground type through-silicon vias（TSVs） exploiting air gaps as insulation layers are designed,analyzed and simulated for applications in millimeter wave.The compact wideband equivalent-cir...; 关键词：capacitance parasitic wideband dielectric millimeter depletion insulation circuits transistor conductance

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse被引量：4: 《Chinese Physics B》2016年第8期458-462,共5页席晓文柴常春刘阳杨银堂樊庆扬史春蕾; supported by the National Basic Research Program of China(Grant No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(CAEP)(Grant No.2015-0214.XY.K); An electromagnetic pulse（EMP）-induced damage model based on the internal damage mechanism of the Ga As pseudomorphic high electron mobility transistor（PHEMT） is established in this paper. With this model, the rela...; 关键词：PHEMT electromagnetic pulse damage threshold empirical formula

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse被引量：2: 《Chinese Physics B》2016年第4期456-460,共5页席晓文柴常春赵刚杨银堂于新海刘阳; supported by the National Basic Research Program of China(Grant No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(CAEP)(Grant No.2015-0214.XY.K); The damage effect and mechanism of the electromagnetic pulse （EMP） on the GaAs pseudomorphic high electron mobility transistor （PHEMT） are investigated in this paper. By using the device simulation software, the d...; 关键词：PHEMT the electromagnetic pulse damage effect

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave被引量：5: 《Chinese Physics B》2016年第4期461-466,共6页刘阳柴常春杨银堂孙静李志鹏; supported by the National Basic Research Program of China(Grant No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology;China Academy of Engineering Physics(Grant No.2015-0214.XY.K); In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigati...; 关键词：low noise amplifier HEMT high power microwave damage effect

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