国家自然科学基金(60776030)

作品数：7被引量：5H指数：1
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相关作者：徐秋霞陈大鹏孟令款殷华湘叶甜春更多>>
相关机构：中国科学院微电子研究所更多>>
相关期刊：《Chinese Physics B》《真空科学与技术学报》《Journal of Semiconductors》更多>>
相关主题：HFSIONTANHFCHARACTERISTICSPREPARED更多>>
相关领域：电子电信理学更多>>
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金属栅回刻平坦化技术被引量：1
《真空科学与技术学报》2012年第9期793-797,共5页孟令款 殷华湘 徐秋霞 陈大鹏 叶甜春 
极大规模集成电路制造技术及成套工艺(02专项)(No.2009ZX02035);国家自然科学基金项目(No.60776030);中国科学院微电子器件与集成技术重点实验室课题资金资助
随着CMOS集成电路技术节点缩减到45 nm及以下,高K金属栅(HK/MG)的后栅集成工艺已逐渐成为先进集成电路制造中的主流技术。其中金属栅(假栅)集成结构的平坦化是实现后栅集成的关键技术之一。本文通过特色开发的SOG两步等离子体回刻结合O...
关键词：金属栅 假栅 旋转涂布玻璃 等离子回刻 平坦化 
Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices被引量：1
《Journal of Semiconductors》2011年第7期145-149,共5页李永亮 徐秋霞 
Project supported by the Special Funds for Major State Basic Research Projects,China(No.2006CB302704 );the National Natural Science Foundation of China(No.60776030)
A novel dry etching process of a poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor（CMOS） devices is investigated.Our strategy to process a poly-Si/TaN/HfSiON gate stack is that each ...
关键词：TaN metal gate HfSiON high-k plasma etching SELECTIVITY INTEGRATION 
Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask
《Journal of Semiconductors》2010年第11期127-130,共4页李永亮 徐秋霞 
Project supported by the Special Funds for Major State Basic Research Project of China(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon（a-Si） hardmask is presented.SCI（NH4OH：H2O2：H2O）,which can achieve reasonable etch rates for me...
关键词：TAN wet etching metal gate high k dielectric hardmask integration 
Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions被引量：1
《Journal of Semiconductors》2010年第3期107-111,共5页李永亮 徐秋霞 
supported by the Special Funds for Major State Basic Research Projects(No.2006CB302704);the National Natural Science Foundation of China(No.60776030).
The wet etching properties ofa HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based sol...
关键词：HFSION HIGH-K wet etching interfacial layer 
TaN wet etch for application in dual-metal-gate integration technology
《Journal of Semiconductors》2009年第12期133-136,共4页李永亮 徐秋霞 
supported by the Special Funds for Major State Basic Research Projects(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/H...
关键词：TAN wet etching metal gate high k dielectric integration 
Thermal stability of HfTaON films prepared by physical vapor deposition
《Journal of Semiconductors》2009年第2期21-25,共5页许高博 徐秋霞 
supported by the State Key Development Program for Basic Research of China (No. 2006CB302704) ;the National Natural Science Foundation of China (No. 60776030)
We investigate the thermal stability of HfTaON films prepared by physical vapor deposition using high resolution transmission electronic microscope （HRTEM） and X-ray photoelectron spectroscopy （XPS）. The results i...
关键词：HfTaON phvsical vapor deoosition thermal stability interfacial laver 
Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition被引量：2
《Chinese Physics B》2009年第2期768-772,共5页许高博 徐秋霞 
supported by the State Key Development Program for Basic Research of China (Grant No 2006CB302704);the National Natural Science Foundation of China (Grant No 60776030)
This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride （HfSiON） on ultrathin SiO2 buffer layer. The gate dielectric with 10A （1A = 0.1 nm） equivalent o...
关键词：HFSION high-k gate dielectric SPUTTERING leakage current 
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