国家重点基础研究发展计划(2010CB327504)

作品数：6被引量：4H指数：1
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相关作者：王燕王林刘斌施毅华雪梅更多>>
相关机构：清华大学南京大学更多>>
相关期刊：《高技术通讯》《Science Bulletin》《固体电子学研究与进展》《Chinese Physics B》更多>>
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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
《Chinese Physics B》2014年第9期414-418,共5页蒋超 陆海 陈敦军 任芳芳 张荣 郑有炓 
supported by the National Basic Research Program of China(Grant Nos.2010CB327504,2011CB922100,and 2011CB301900);the National Natural Science Foundation of China(Grant Nos.60936004 and 11104130);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011556 and BK2011050);the Priority Academic Development Program of Jiangsu Higher Education Institutions,China
In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a func...
关键词：ALGAN/GAN Schottky barrier diodes silicon substrate BREAKDOWN 
用氢化物气相外延(HVPE)法生长的氮化铟薄膜的性质研究
《高技术通讯》2014年第9期971-974,共4页俞慧强 修向前 张荣 华雪梅 谢自力 刘斌 陈鹏 韩平 施毅 郑有炓 
973计划(2011CB301900,2012CB619304,2010CB327504);863计划(2014AA032605);国家自然科学基金(60990311,61274003,60936004,61176063);江苏省自然科学基金(BK2011010)资助项目
在自制设备上用氢化物气相外延(HVPE)方法在α-Al_2O_3以及GaN/α-Al_2O_3衬底上生长了InN薄膜,并对其性质进行了研究。重点研究了生长温度的变化对所获得的InN薄膜的影响,并利用X射线衍射研究了InN薄膜的结构,用扫描电子显微镜研究了...
关键词：氮化铟(InN) 薄膜 氢化物气相外延(HVPE) 
Solar-blind ultraviolet band-pass filter based on metal–dielectric multilayer structures被引量：2
《Chinese Physics B》2014年第7期404-408,共5页王天娇 徐尉宗 陆海 任芳芳 陈敦军 张荣 郑有炓 
supported by the National Basic Research Program of China(Grant Nos.2010CB327504,2011CB922100,and 2011CB301900);the National NaturalScience Foundation of China(Grant Nos.60936004 and 11104130);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011556 andBK2011050);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
Solar-blind ultraviolet （UV） band-pass filter has significant value in many scientific, commercial, and military appli- cations, in which the detection of weak UV signal against a strong background of solar radiatio...
关键词：solar-blind band-pass filter metal-dielectric multilayer 
Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes被引量：1
《Chinese Science Bulletin》2014年第12期1276-1279,共4页Rong Jiang Dawei Yan Hai Lu Rong Zhang Dunjun Chen Youdou Zheng 
supported by the National Basic Research Program of China(2010CB327504 and 2011CB301900);the National Natural Science Foundation of China(60825401 and60936004);the Fundamental Research Funds for the Central Universities(JUSRP51323B);the National Science Foundation of Jiangsu Province(BK2012110)
The reverse leakage characteristics of AlGaNbased ultraviolet light-emitting diodes fabricated on sapphire substrate are studied by temperature-variable current–voltage(I–V)measurement from 300 to 450 K.At low-rever...
关键词：反向漏电流 发光二极管 紫外线 ALGAN 空间电荷限制电流 缺陷形成 电压特性 测量特性 
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
《Chinese Physics B》2014年第5期588-593,共6页张士英 修向前 华雪梅 谢自力 刘斌 陈鹏 韩平 陆海 张荣 郑有炓 
Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the National High Technology Research and Development Program of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011010 and BK2009255)
A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influe...
关键词：hexagonal pyramids GAN photo-assisted chemical etching 
一种考虑自热效应的AlGaN/GaN HEMT大信号模型被引量：1
《固体电子学研究与进展》2011年第1期13-15,75,共4页王林 王燕 
国家重点基础研究专项基金资助项目(2010CB327504)
当AlGaN/GaN HEMT输出高功率密度时,器件沟道温度的升高将引起电流的下降(自热效应)。提出了一种针对AlGaN/GaN HEMT改进的大信号等效电路模型,考虑了HEMT自热效应,建立了一种改进的大信号I-V特性模型,仿真结果与测试结果符合较好,提高...
关键词：铝镓氮/氮化镓异质结场效应晶体管 自热效应 等效电路 大信号模型 
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