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LINEARITY: 作品数：173被引量：141H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：代伐石寅黄见秋黄晓东黄庆安更多>>; 相关机构：东南大学中国科学院中国科学院微电子研究所清华大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划国家教育部博士点基金更多>>

A review on GaN HEMTs:nonlinear mechanisms and improvement methods被引量：1: 《Journal of Semiconductors》2023年第12期31-46,共16页Chenglin Du Ran Ye Xiaolong Cai Xiangyang Duan Haijun Liu Yu Zhang Gang Qiu Minhan Mi; supported by the Shenzhen Science and Technology Program on Key Basic Research Project undergrant JCYJ20210324120409025;the National Natural Science Foundation of China under grant 61904135。; The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability.To ensure the quality of the communication signal,linearity is a key parameter during the system ...; 关键词：GaN HEMT linearity improvement transconductance reduction transconductance compensation nanowire channel graded channel

Oneε-Ga_(2)O_(3)-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity被引量：1: 《Chinese Physics B》2023年第5期158-163,共6页安跃华高震森郭雨张少辉刘增唐为华; the National Natural Science Foundation of China(Ganrt No.62004047)。; Theε-Ga_(2)O_(3) thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition(MOCVD)method,and then was used to fabricate a deep-ultraviolet(DUV)photodetector(PD).Theε-Ga_(2)O_(3) thin f...; 关键词：metastable Ga_(2)O_(3) photocurrent gain LINEARITY DUV detection

High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications: 《Chinese Physics B》2022年第2期547-551,共5页Pengfei Wang Minhan Mi Meng Zhang Jiejie Zhu Yuwei Zhou Jielong Liu Sijia Liu Ling Yang Bin Hou Xiaohua Ma Yue Hao; supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902);the Fundamental Research Funds for the Central Universities;the Innovation Fund of Xidian University;the National Natural Science Foundation of China(Grant No.61904135);the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262);the Research and Development Plan of Key Fields in Guangzhou(Grant No.202103020002)。; We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar...; 关键词：ALGAN/GAN LINEARITY 1-dB compression point millimeter-wave application

InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range被引量：4: 《Chinese Optics Letters》2022年第2期153-159,共7页Yu Li Weifang Yuan Ke Li Xiaofeng Duan Kai Liu Yongqing Huang; This work was supported by the National Key Research and Development Program of China(No.2018YFB2200803)。; Linearity is a very important parameter to measure the performance of avalanche photodiodes(APDs) under high input optical power. In this paper, the influence of the absorption layer on the linearity of APDs is carefu...; 关键词：LINEARITY avalanche photodiode dynamic range

Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis: 《Chinese Physics B》2020年第10期556-565,共10页Hui-Fang Xu Xin-Feng Han Wen Sun; Project supported by the Natural Science Research Key Project of Universities of Anhui Province,China(Grant No.KJ2017A502);the Introduced Talent Project of Anhui Science and Technology University,China(Grant No.DQYJ201603);the Excellent Talents Supported Project of Colleges and Universities,China(Grant No.gxyq2018048)。; The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the...; 关键词：dopingless tunnel field effect transistor line tunneling lincarity parameters

Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs: 《Chinese Physics B》2018年第4期432-436,共5页Ting-Ting Liu Kai Zhang Guang-Run Zhu Jian-Jun Zhou Yue-Chan Kong Xin-Xin Yu Tang-Sheng Chen; Project supported by the National Natural Science Foundation of China(Grant Nos.61504125,61474101,and 61505181); We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long ...; 关键词：AlGaN/GaNFinFETs output power density linearity characteristics

Experimental and Simulation Analysis of Two-Tone and Three-Tone Photodetector Linearity Characterizing Systems被引量：1: 《Chinese Physics Letters》2017年第11期110-113,共4页费嘉瑞黄永清刘悠欣刘凯段晓峰任晓敏; Supported by the National Natural Science Foundation of China under Grant Nos 61574019,61674018 and 61674020;the Fund of State Key Laboratory of Information Photonics and Optical Communications;the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No 20130005130001; Two measurement techniques are investigated to characterize photodetector linearity. A model for the two-tone and three-tone photodetector systems is developed to thoroughly investigate the influences of setup compone...; 关键词：OIP Experimental and Simulation Analysis of Two-Tone and Three-Tone Photodetector Linearity Characterizing Systems IMD dBm

Effect of collector bias current on the linearity of common-emitter BJT amplifiers: 《Journal of Semiconductors》2010年第12期75-79,共5页李琨滕建辅轩秀巍; Project supported by the Tianjin Natural Science Foundation,China(No.09JCYBJC00700); Using a Volterra series, an explicit formula is derived for the connection between input 3rd-order intercept point and collector bias current （IcQ） in a common-emitter bipolar junction transistor amplifier. The anal...; 关键词：IIP3 collector bias current BJT dynamic bias current

Linearity of quadrant avalanche photodiode in laser tracking system被引量：6: 《Chinese Optics Letters》2009年第8期728-731,共4页张雷洪杨燕夏文兵朱小磊陈卫标陆雨田; The tracking precision of laser tracking system is affected by the angular resolution of quadrant avalanche photodiode. According to the detecting principle of quadrant avalanche photodiode, the light spot area, the o...; 关键词：Acoustic intensity Avalanche photodiodes Fiber optic sensors LASERS LINEARIZATION NAVIGATION Photodiodes Signal to noise ratio

Linearity optimization of edge filter demodulators in FBG_s被引量：2: 《Optoelectronics Letters》2008年第3期193-195,共3页LI Dong-sheng SUI Qing-mei CAO Yu-qiang; A kind of electric circuit is improved to optimize the linearity of edge filter demodulators in FBG .By using a logarithm amplifier and an extraction operation, the linear range of optimized edge filter demodulators h...; 关键词：光纤解调器线性分析分析方法

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