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TURN-OFF: 作品数：30被引量：47H指数：4; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：范尧付海燕杨天鸣刘瑞姣曾竟更多>>; 相关机构：中南民族大学新疆师范大学国网智能电网研究院中电普瑞科技有限公司更多>>; 相关期刊：《Chinese Physics B》《CSEE Journal of Power and Energy Systems》《江西化工》《Chinese Journal of Structural Chemistry》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划广东省自然科学基金新疆维吾尔自治区自然科学基金更多>>

An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics: 《Chinese Physics B》2023年第6期545-550,共6页陈伟中牟柳亭秦海峰张红升韩郑生; Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016);the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550)。; A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling a...; 关键词：MOSFET split gate dummy gate TURN-OFF and reverse recovery

An Improved Behavioral Model for High-voltage and High-power IGBT Chips被引量：3: 《CSEE Journal of Power and Energy Systems》2023年第1期284-292,共9页Yixuan Yang Zhibin Zhao Cheng Peng Xuebao Li Zhiyu Sun Xiang Cui; This work was supported by the National Natural Science Foundation of China-State Grid Corporation Joint Fund for Smart Grid(No.U1766219).; High-voltage and high-power IGBT chips have a noticeable carrier storage effect,which is related to the load current.However,the research on the carrier storage effect of existing IGBT behavior models is insufficient....; 关键词：Carrier storage effect high voltage IGBT behavioral model turn-off transient

Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time被引量：1: 《Chinese Physics B》2019年第12期303-310,共8页Qing Liu Hong-Bin Pu Xi Wang; Project supported by the National Natural Science Foundation of China(Grant No.51677149); An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical f...; 关键词：4H-SIC gate turn-off(GTO) thyristor TURN-ON TURN-OFF

A New Active Gate Driver for MOSFET to Suppress Turn-Off Spike and Oscillation被引量：1: 《Chinese Journal of Electrical Engineering》2018年第2期43-49,共7页Yanfeng Jiang Chao Feng Zhichang Yang Xingran Zhao Hong Li; Supported in part by the General Program of National Natural Science Foundation of China under Grant 51577010,51777012;in part by the Fundamental Research Funds for the Central Universities under Grant 2017JBM054.; MOSFETs are widely used in power electronics converters.Due to the high di/dt and dv/dt of the MOSFET and parasitic parameters in the circuit,drain voltage spikes and oscillations will be generated during turn-off,whi...; 关键词：Active gate driver electromagnetic interference voltage spike OSCILLATION

Superjunction nanoscale partially narrow mesa IGBT towards superior performance: 《Chinese Physics B》2017年第3期582-587,共6页喻巧群陆江刘海南罗家俊李博王立新韩郑生; Project supported by the National Natural Science Foundation of China(Grant No.61404161); We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure a...; 关键词：insulated gate bipolar transistor （IGBT） partially narrow mesa （PNM） superjunction （S J） turn-offloss

A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate: 《Journal of Semiconductors》2016年第8期55-59,共5页贾艳陈宏谭骥卢烁今朱阳军; supported by the National Major Science and Technology Special Project of China(No.2013ZX02305005-002);the Major Program of the National Natural Science Foundation of China(No.51490681); A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the el...; 关键词：CSTBT high breakdown voltage p-pillar SemiSJ-CSTBT turn-off switching loss

Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor: 《Journal of Semiconductors》2014年第7期48-51,共4页朱利恒陈星弼; supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities of China(No.E022050205); Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort...; 关键词：reverse conducting IGBT snapback flee turn-off energy reverse-recovery charge

A new short-anoded IGBT with high emission efficiency被引量：2: 《Journal of Semiconductors》2012年第11期48-51,共4页陈伟中张波李泽宏任敏李肇基; supported by the National Natural Science Foundation of China(Nos.60806025,61076082); A novel short-anoded insulated-gate bipolar transistor（SA-IGBT） with double emitters is proposed.At the on-state,the new structure shows extraordinarily high emission efficiency.Moreover,with a short-contacted anode...; 关键词：short-anode insulated-gate bipolar transistor snapback turn-off tradeoff

Turn-on and turn-off voltages of an avalanche p-n junction: 《Journal of Semiconductors》2012年第9期55-59,共5页张国青韩德俊朱长军翟学军; supported by the Doctoral Start-Up Fund of Xi'an Polytechnic University,China(No.BS1126);the Project of Ministry of Education,Shanxi Province(No.12JK0975); Characteristics of the turn-on and turn-off voltage of avalanche p-n junctions were demonstrated and studied. As opposed to existing reports, the differences between the turn-on and turn-offvoltage cannot be neglected...; 关键词：Geiger mode avalanche photodiode p-n junction turn-on voltage turn-off voltage

A novel high performance ESD power clamp circuit with a small area: 《Journal of Semiconductors》2012年第9期124-130,共7页杨兆年刘红侠李立卓青青; supported by the National Natural Science Foundation of China(Nos.60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083); A MOSFET-based electrostatic discharge （ESD） power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. ...; 关键词：electrostatic discharge clamp circuit false triggering turn-off mechanism

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