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METAL-OXIDE-SEMICONDUCTOR: 作品数：60被引量：53H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：杨霏陶永洪汪玲刘奥陈弘达更多>>; 相关机构：国网智能电网研究院南京电子器件研究所中国科学院全球能源互联网研究院更多>>; 相关期刊：《Journal of Rare Earths》《系统仿真技术》《Chinese Physics B》《Chinese Physics Letters》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家电网公司科技项目中国博士后科学基金更多>>

Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer: 《Chinese Physics Letters》2017年第4期83-86,共4页Han-Han Lu Jing-Ping Xu Lu Liu; Supported by the National Natural Science Foundation of China under Grant Nos 61176100,61274112 and 61404055; The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor （MOS） capacitors with or without ZrAION as the interfacial passivation layer （IPL） are fabricated and their properties are investigated. The experimental r...; 关键词：MOS Zr Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Lay

Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress: 《Chinese Physics Letters》2014年第12期82-84,共3页郑齐文崔江维余学峰郭旗周航任迪远; Owing to the fifll isolation and minimization of the silicon active volume, silicon-on-insulator （SOI） tech- nology has better resistance against transient ionizing effects like single event effects （SEE） or latch...

The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects: 《Chinese Physics Letters》2014年第12期89-91,共3页罗杰馨陈静柴展吕凯可伟伟杨燕王曦; Silicon-on-insulator （SOI） technology is attracting a great deal of attention for applications in very large scale integrated circuits due to their excellent proper- ties such as reduced capacitance, higher drive cu...

A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers被引量：1: 《Chinese Physics Letters》2013年第12期112-115,共4页WU Li-Juan ZHANG Wen-Tong ZHANG Bo LI Zhao-Ji; Supported by the National Natural Science Foundation of China(No 61306094);the Project of Sichuan Provincial Educa-tion Department(No 13ZA0089);the Research Fund for the Middle and Youth Academic Leader of Chengdu University of Information Technology(No J201301).; A novel silicon-on-insulator(SOI)high-voltage device of super-junction(SJ)lateral-double-diffused metal-oxide-semiconductor transistors(LDMOSTs)with T-dual dielectric buried layers(T-DBLs)is presented.The T-DBLs are f...; 关键词：BREAKDOWN SOI DIELECTRIC

Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors: 《Chinese Physics Letters》2013年第9期185-189,共5页PENG Chao ZHANG Zheng-Xuan HU Zhi-Yuan HUANG Hui-Xiang NING Bing-Xu BI Da-Wei; Supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(ZHD201205);the National Natural Science Foundation of China(61106103 and 61107031).; The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray irradiation.Radiation enhanced drain-induced barrier lowering(DIBL)under d...; 关键词：DRAIN transistor BIPOLAR

The Impact of HC1 Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors: 《Chinese Physics Letters》2012年第4期161-163,共3页XUE Bai-Qing CHANG Hu-Dong SUN Bing WANG Sheng-Kai LIU Hong-Gang; Supported by the National Basic Research Program of China under Grant NoS 2011CBA00605 and 2010CB327501;the National Science&Technology Major Project of China under Grant No 2011ZX02708-003,One Hundred Talents Program of Chinese Academy of Sciences;the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry.; Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al2O3/Ge metal-oxide-semiconductor capacitors.After hydrogen chlorine cleaning,a smooth Ge surface...; 关键词：CHLORINE terminated TREATMENT

Surface Potential Equation for Metal-Oxide-Semiconductor Capacitors Considering the Degenerate Effect: 《Chinese Physics Letters》2011年第12期245-248,共4页ZHANG Da SUN Jiu-Xun PU Jin-Rong; Supported by the Program for Excellent Talents of Sichuan Province under Grant No 2011JQ0053;the Program for New Century Excellent Talents in University of China under Grant No NCET-05-0799;the Program for Excellent Talents of UESTC under Grant No 23601008.; A surface potential equation (SPE) considering the degenerate effect is derived. To make the degenerate SPE analysis, an empirical approximation for the Fermi integral is applied in the derivation. Dependences of surf...; 关键词：DEGENERATE potential DERIVATION

Characteristics Analysis of Vertical Double Gate Strained Channel Heterostructure Metal-Oxide-Semiconductor-Field-Effect-Transistor: 《Chinese Physics Letters》2009年第2期259-262,共4页杨媛李桂萍高勇刘静; Since device feature size shrinks continuously, there appears various short-channel effects on the fabrication and performance of devices and integrated circuits. We present a vertical double gate （VDG） strained cha...; 关键词：field emission molybdenum dioxide enhancement factor

Dual-Material Surrounding-Gate Metal-Oxide-Semiconductor Field Effect Transistors with Asymmetric Halo被引量：1: 《Chinese Physics Letters》2009年第1期356-359,共4页李尊朝; Supported by the National Natural Science Foundation of China under Grant No 10771168, the National Basic Research Programme of China under Grant No 2005CB321701, and the Natural Science Foundation of Shaanxi Province under Grant No SJ08-ZT13.; Asymmetrical halo and dual-material gate structure are used in the sub-100 nm surrounding-gate metal oxidesemiconductor field effect transistor （MOSFET） to improve the performance. Using three-region parabolic poten...

A Novel Fully Depleted Air A1N Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor: 《Chinese Physics Letters》2008年第8期3048-3051,共4页杨媛高勇巩鹏亮; A novel fully depleted air A1N silicon-on-insulator （SOD metai-oxide-semiconductor field effect transistor （MOS- FET） is presented, which can eliminate the self-heating effect and solve the problem that the off-sta...

METAL-OXIDE-SEMICONDUCTOR