云南高校图书馆联盟文献共享服务平台- NON-POLAR

NON-POLAR: 作品数：31被引量：11H指数：2; 导出分析报告; 相关领域：理学更多>>; 相关机构：东南大学更多>>; 相关期刊：《Chemical Research in Chinese Universities》《Chinese Physics B》《Green Energy & Environment》《Open Journal of Veterinary Medicine》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划福建省自然科学基金中国博士后科学基金更多>>

Alkali metal carboxylates as non-polar-facet ligands for the synthesis of colloidal quantum dots: 《Nano Research》2024年第12期10661-10668,共8页Li Luo Xiaolan Zhou Xiaozhi Xu Zhuo Zhao Chaodan Pu; supported by the Shanghai Rising-Star Program(No.22QA1406300);the National Natural Science Foundation of China(No.U22A2072);the Start-up Funding of ShanghaiTech University.; The impact of alkali metal carboxylates on the synthesis of colloidal quantum dots(CQDs)was investigated.Through a ligand removal experiment,we demonstrated that due to its high hydrophilic nature,sodium oleate disper...; 关键词：quantum dots LIGAND alkali metal carboxylates crystal structure anisotropic growth

Shock Fronts in Non-Polar Electro-Conducting Media: 《Journal of Applied Mathematics and Physics》2022年第4期1055-1065,共11页Michael Grinfeld Pavel Grinfeld; We analyze the propagation of electromagnetic fronts in unbounded electric conductors. Our model is based on the Maxwell model of electromagnetism, which includes the displacement current and Ohm’s law in its simples...; 关键词：Electric Current in Conductors Boundary Value Problems Exact Solution Ray-Equations

Probing non-polarizable liquid/liquid interfaces using scanning ion conductance microscopy被引量：1: 《Science China Chemistry》2020年第3期411-418,共8页Yaxiong Gu Ye Chen Yifan Dong Junjie Liu Xianhao Zhang Mingzhi Li Yuanhua Shao; supported by the National Natural Science Foundation of China(21575006,21335001);the National Key Research and Development Program of China(2016YFA0201300).; The study of microscopic structure of a liquid/liquid interface is of fundamental importance due to its close relation to the thermodynamics and kinetics of interfacial charge transfer reactions.In this article,the mi...; 关键词：micro/nano pipettes SCANNING ion CONDUCTANCE MICROSCOPY microstructure of a non-polarizable liquid/liquid interface

Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer: 《Chinese Physics Letters》2020年第3期69-72,共4页Shen Yan Xiao-Tao Hu Jun-Hui Die Cai-Wei Wang Wei Hu Wen-Liang Wang Zi-Guang Ma Zhen Deng Chun-Hua Du Lu Wang Hai-Qiang Jia Wen-Xin Wang Yang Jiang Guoqiang Li Hong Chen; Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。; We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N...; 关键词：INSERTION POLAR ROUGHNESS

Growth modulation of simultaneous epitaxy of ZnO obliquely aligned nanowire arrays and film on r-plane sapphire substrate被引量：2: 《Nano Research》2018年第7期3864-3876,共13页Yongchun Xiao Yaoyao Tian Shujing sun Chenlong Chen Buguo Wang; This work was funded by Hundred Talents Program of Fujian Province and the National Natural Science Foundation of China （No. 61774158）, and the Natural Science Foundation of Fujian Province （No. 2018J01110）.; Simultaneous epitaxial growth of film and nanowire array on a substrate is of both scientific significance and practical importance for nanoscale optoelectronics. Nevertheless, in situ building conducting connection b...; 关键词：ZNO obliquely aligned nanowire arrays non-polar thin film EPITAXY zinc self-catalyzed

On the Possibility of an Isochoric Phase Transition in an Electrostatic Field: 《Journal of Physical Science and Application》2017年第3期44-46,共3页A. A. Sobko; In the present paper that considers the possibility for modification of equation of state for a non-polar gas in a closed thermally-insulated capacitor and, consequently, the possibility for changing the temperature a...; 关键词：Non-polar gas equation of state generalized equation of Van der Waals-Berthelot phase transition electrostatic field.

Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates: 《Chinese Physics Letters》2015年第9期154-157,共4页蒋仁渊许晟瑞张进成姜腾江海清王之哲樊永祥郝跃; Supported by the National Natural Science Foundation of China under Grant No 61204006;the Fundamental Research Funds for the Central Universities under Grant No K50511250002; Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy a...; 关键词：GAN Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates

Evaluation of the Equality of Non-Polar Capillary Columns in GC/MS Analysis of Food Contact Plastics: 《American Journal of Analytical Chemistry》2013年第9期476-487,共12页Motoh Mutsuga Miku Yamaguchi Yutaka Abe Hiroshi Akiyama; Non-polar capillary columns for GC/MS are widely utilized in the analysis of additives for food contact materials. Though various kinds of non-polar capillary columns are commercially available, the equality of their ...; 关键词：NON-POLAR CAPILLARY Column GC/MS Analysis Additives for Food Contact PLASTICS RELATIVE RETENTION Time RELATIVE Peak Area

Effects of V/III ratio on the growth of a-plane GaN films: 《Chinese Physics B》2011年第10期368-372,共5页谢自力李弋刘斌张荣修向前陈鹏郑有炓; supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900);High Technology Research Program of China (Grant No. 2009AA03A198);the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003);the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China; The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...; 关键词：V/III ratio a-plane GaN NON-POLAR metal-organic chemical vapour deposition

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films: 《Chinese Physics B》2010年第1期520-523,共4页赵璐冰于彤军吴洁君杨志坚张国义; Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018); Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...; 关键词：non-polar GaN V/III ratio ANISOTROPY migration length

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