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OFFSET: 作品数：395被引量：610H指数：11; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：钟敏周益民朱策单新建汪国平更多>>; 相关机构：中国地震局中国科学院中国矿业大学无锡市广播电视大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划国家教育部博士点基金更多>>

Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process: 《Chinese Physics B》2022年第5期743-748,共6页Bo Wang Peng Ding Rui-Ze Feng Shu-Rui Cao Hao-Miao Wei Tong Liu Xiao-Yu Liu Hai-Ou Li Zhi Jin; supported by the National Natural Science Foundation of China(Grant Nos.61874036,62174041,and61434006);the Open Project of State Key Laboratory of ASIC and System(Grant No.KVH1233021);the Opening Foundation of the State Key Laboratory of Advanced Materials and Electronic Components(Grant No.FHR-JS-201909007);the Guangxi Innovation Research Team Project(Grant Nos.2018GXNSFGA281004 and 2018GXNSFBA281152);the Guangxi Innovation Driven Development Special Fund Project(Grant No.AA19254015);the Guangxi Key Laboratory of Precision Navigation Technology and Application Project(Grant Nos.DH201906,DH202020,and DH202001)。; A double-recessed offset gate process technology for In P-based high electron mobility transistors(HEMTs)has been developed in this paper.Single-recessed and double-recessed HEMTs with different gate offsets have been...; 关键词：INP HEMT maximum oscillation frequency(fMAX) double-recess offset gate

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs: 《Chinese Physics B》2022年第5期720-724,共5页Shurui Cao Ruize Feng Bo Wang Tong Liu Peng Ding Zhi Jin; Project supported by the National Nature Science Foundation of China(Grant No.61434006)。; A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gat...; 关键词：InP HEMT INGAAS/INALAS cut-off frequency(fT) maximum oscillation frequency(fmax) asymmetric gate recess

Embedding any desired number of coexisting attractors in memristive system: 《Chinese Physics B》2021年第12期53-62,共10页Chunbiao Li Ran Wang Xu Ma Yicheng Jiang Zuohua Liu; Project supported by the National Natural Science Foundation of China(Grant Nos.61871230 and 51974045);the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20181410)。; A simple variable-boostable system is selected as the structure for hosting an arbitrarily defined memristor for chaos producing.The derived three-dimensional(3-D)memristive chaotic system shows its distinct property ...; 关键词：offset boosting attractor doubling attractor self-reproducing memristive system

Laser frequency offset-locking using electromagnetically induced transparency spectroscopy of (85)Rb in magnetic field被引量：1: 《Chinese Physics B》2018年第9期296-300,共5页Han-Mu Wang Hong Cheng Shan-Shan Zhang Pei-Pei Xin Zi-Shan Xu Hong-Ping Liu; Project supported by the National Key Basic Research Program of China(Grant No.2013CB922003);the National Natural Science Foundation of China(Grant Nos.91421305,91121005,and 11174329); We have experimentally offset-locked the frequencies of two lasers using electromagnetically induced transparency（EIT） spectroscopy of ^（85）Rb vapor with a buffer gas in a magnetic field at room temperature. The m...; 关键词：electromagnetically induced transparency offset-lock rubidium atom magnetic field

Linear synchronization and circuit implementation of chaotic system with complete amplitude control被引量：2: 《Chinese Physics B》2017年第12期124-133,共10页李春彪 Wesley Joo-Chen Thio Julien Clinton Sprott 张若洵陆天爱; Project supported by the Startup Foundation for Introducing Talent of Nanjing University of Information Science&Technology,China(Grant No.2016205);the Natural Science Foundation of the Jiangsu Higher Education Institutions of Jiangsu Province,China(Grant No.16KJB120004);the Priority Academic Program Development of Jiangsu Higher Education Institutions;the Natural Science Foundation of Hebei Province,China(Grant No.A2015108010); Although chaotic signals are considered to have great potential applications in radar and communication engineering, their broadband spectrum makes it difficult to design an applicable amplifier or an attenuator for a...; 关键词：complete amplitude control amplitude rescaling offset boosting linear synchronization

Monolithic CEO-stabilization scheme-based frequency comb from an octave-spanning laser被引量：1: 《Chinese Physics B》2016年第4期150-153,共4页于子蛟韩海年谢阳滕浩王兆华魏志义; supported by the National Basic Research Program of China(Grant No.2012CB821304);the National Natural Science Foundation of China(Grant Nos.11078022 and 61378040); We demonstrate a carder-envelope phase-stabilized octave-spanning oscillator based on the monolithic scheme. A wide output spectrum extending from 480 nm to 1050 nm was generated directly from an all-chirped mirror Ti...; 关键词：octave-spanning laser optical frequency comb carrier-envelope offset low phase noise

Switchable multi-wavelength fiber laser based on modal interference: 《Chinese Physics B》2015年第8期317-322,共6页马林孙将齐艳辉康泽新简水生; A comb fiber filter based on modal interference is proposed and demonstrated in this paper. Here two cascaded uptapers are used to excite the cladding mode, and a core-offset jointing point is used to act as an interf...; 关键词：fiber laser up-taper core-offset modal interferometer

Pump-induced carrier envelope offset frequency dynamics and stabilization of an Yb-doped fiber frequency comb: 《Chinese Physics B》2014年第12期204-208,共5页赵健李文雪杨康文沈旭玲白东碧陈修亮曾和平; Project supported by the National Natural Science Foundation of China(Grant No.11274115);the National Key Project for Basic Research,China(Grant No.2011CB808105);the National Key Scientific Instrument Project,China(Grant No.2012YQ150092); In this paper, we demonstrate a carrier envelope phase-stabilized Yb-doped fiber frequency comb seeding by a nonlinear-polarization-evolution（NPE） mode-locked laser at a repetition rate of 60 MHz with a pulse durati...; 关键词：optical frequency comb phase-locked loop mode locking fiber laser

Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode被引量：3: 《Chinese Physics B》2011年第11期446-450,共5页陈丰平张玉明张义门汤晓燕王悦湖陈文豪; supported by the National Natural Science Foundation of China(Grant No.61006060);the 13115 Innovation Engineering of Shaanxi Province,China(Grant No.2008ZDKG-30); The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window...; 关键词：4H-SIC junction barrier Schottky offset field plate electrical characteristics

Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes: 《Chinese Physics B》2010年第4期394-397,共4页陈丰平张玉明张义门吕红亮宋庆文; Project supported by Applied Materials Innovation Fund (Grant No. XA-AM-200702);the 13115 Innovation Engineering of Shaanxi Province,China (Grant No. 2008ZDKG-30); A new structure of 4H-silicon carbide （SIC） merged PiN-Schottky （MPS） diodes with offset field-plate （FP） as edge termination is developed. To understand the influences of 4H-SiC MPS diodes with offset FP on the...; 关键词：4H SiC merged PiN-Schottky offset field-plate reverse characteristics

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