supported by the National Natural Science Foundation of China(Grant No.12074324);Science,Technology,and Innovation Commission of Shenzhen Municipality(Grant No.JCJY20180508163404043)。
Two analytic expressions of temperature-dependent peak positions employing the localized-state ensemble(LSE)luminescence model are deduced for the cases ofΔE=E_(a)−E_(0)>0 and<0,respectively,under the firstorder appr...
supported by the National Natural Science Foundation of China(Grant Nos.62074077,61921005,61974062,and 61904082);the China Postdoctoral Science Foundation(Grant No.2020M671441);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant Nos.19KJB510006 and 19KJB510039);the Natural Science Foundation of Jiangsu Province(Grant No.BK20190765)。
Nonpolar(1120)plane In_(x)Ga_(1-x)N epilayers comprising the entire In content(x)range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties...
Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。
We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N...
Supported by the National Key Research and Development Program of China under Grant No 2016YFA0301202;the National Natural Science Foundation of China under Grant Nos 11474275,61674135 and 91536101;the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDPB0603;the China Postdoctoral Science Foundation under Grant No 2017M622400
The influence of the pressure transmission medium(PTM)on the excitonic interband transitions in monolayer tungsten diselenide(WSe2)is investigated using photoluminescence(PL)spectra under hydrostatic pressure up...
Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400100;the China Postdoctoral Science Foundation under Grant No 2015M582610
We investigate the threading dislocation(TD)density in N-polar and Ga-polar GaN films grown on sapphire substrates by metal-organic chemical vapor deposition.X-ray diffraction results reveal that the proportion of scr...
Supported by the National Natural Science Foundation of China under Grant Nos 61204006,61574108,61334002,61474086 and 51302306
C-implantation N-polar CaN films are grown on c-plane sapphire substrates by metal organic chemical vapor deposition. C-implantation induces a large number of defects and causes disorder of the lattice structure in th...
Supported by the National Natural Science Foundation of China under Grant No 61306113
Ti/Al based Ohmic contacts to as-grown N-polar GaN are investigated by cross-section transmission electron microscopy and energy dispersive x-ray spectroscopy. Due to the higher oxygen background doping in the N- pola...
Supported by the National Natural Science Foundation of China under Grant No 10975125.
The dynamics of quantum discord for a class of qutrit-qutrit states under depolarizing and dephasing noise are investigated using the geometric measure of quantum discord.We find that in the quantum discord for these ...
Supported by the Post-Doctoral Research Program of China(42956);the National Basic Research Program of China;the National Natural Science Foundation of China under Grant No 40890163.
More than 300 electrostatic solitary waves(ESWs)with a large perpendicular component which is a bi-polar waveform structure are observed in the boundary layer within the magnetic reconnection diffusion region in the n...
Supported by the Chinese Academy of Sciences,and the National Natural Science Foundation of China under Grant Nos 10975124,10834005,91021005.
Pseudo-pure state(PPS)preparation is crucial in nuclear magnetic resonance quantum computation.There have been some methods in spin-1/2 systems and a few attempts in quadrupolar spin systems.As optimal control via gra...