POLISHING

作品数：210被引量：349H指数：10
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相关领域：金属学及工艺更多>>
相关作者：辛企明康仁科霍凤伟金洙吉赵福令更多>>
相关机构：大连理工大学东华大学北京理工大学南昌大学更多>>
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Effect of 1,2,4-triazole on galvanic corrosion between cobalt and copper in CMP based alkaline slurry被引量：5
《Journal of Semiconductors》2018年第4期77-82,共6页Lei Fu Yuling Liu Chenwei Wang Linan Han 
Project supported by the Major National Science and Technology Special Projects(No.2016ZX02301003-004-007);the Natural Science Foundation of Hebei Province,China(No.F2015202267);the Outstanding Young Science and Technology Innovation Fund of Hebei University of Technology(No.2015007)
Cobalt has become a new type of barrier material with its unique advantages since the copper-interconnects in the great-large scale integrated circuits （GLSI） into 10 nm and below technical nodes, but cobalt and cop...
关键词：COBALT 1 2 4-TRIAZOLE galvanic corrosion alkaline polishing slurry CMP 
Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(1122) aluminum nitride surface被引量：3
《Journal of Semiconductors》2016年第3期115-121,共7页Khushnuma Asghar D.Das 
financial support from the Department of Science and Technology(DST),Government of India(No,SR/S2/Cmp-0009/2011);partial support from the Board of Research in Nuclear Sciences(BRNS),Department of Atomic Energy(DAE),Government of India(No.-34/14/43/2014-BRNS)with ATC
An abrasive free chemical mechanical planarization（AFCMP） of semi-polar（1122） Al N surface has been demonstrated. The effect of slurry p H, polishing pressure, and platen velocity on the material removal rate（MRR...
关键词：Al N AFCMP chemical mechanical planarization material removal rate surface roughness 
A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate
《Journal of Semiconductors》2015年第9期143-148,共6页樊世燕 刘恩海 张军 刘玉岭 王磊 林凯 孙鸣 石陆魁 
Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308);the Natural Science Foundation of Hebei Province,China(No.F2013202104)
The influence of the components of an alkali polishing slurry and the mutual influences on the Cu polishing rate were investigated by a CMP polishing rate prediction model established with a modified artificial neural...
关键词：polishing slurry polishing rate sensitivity analysis artificial neural network artificial bee colonyalgorithm 
Reducing the mechanical action of polishing pressure and abrasive during copper chemical mechanical planarization
《Journal of Semiconductors》2014年第12期139-143,共5页蒋勐婷 刘玉岭 
supported by the 02 Science and Technology Key Program of the National Medium-and Long-Term Science and Technology Development Plan of China(No.2009ZX02308);the Natural Science Foundation of Hebei Province,China(No.E2013202247)
Chemical mechanical planarization（CMP） is a critical process in deep sub-micron integrated circuit manufacturing. This study aims to improve the planarization capability of slurry, while minimizing the mechanical ac...
关键词：planarization capability mechanical action alkaline slurry softer gentler polishing 
The impact of polishing on germanium-on-insulator substrates
《Journal of Semiconductors》2013年第8期38-42,共5页林旺 阮育娇 陈松岩 李成 赖虹凯 黄巍 
supported by the Key Program of the National Natural Science Foundation of China(Nos.61176050,61036003,61176092, 60837001;the Fundamental Research Funds for Fujian Province of China(No.2012H0038);the National Basic Research Program of China (Nos.2012CB933503,2013CB632103);the Fundamental Research Funds for the Central Universities,China(No.2010121056)
We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bond...
关键词：germanium-on-insulator wafer bonding mechanical polishing chemical-mechanical polishing 
Material removal rate of 6H-SiC crystal substrate CMP using an alumina(Al_2O_3) abrasive被引量：9
《Journal of Semiconductors》2012年第10期142-148,共7页苏建修 杜家熙 马利杰 张竹青 康仁科 
supported by the National Natural Science Foundation of China(No.51075125);the Key Scientific Research Program of Economic and Social Development of Xinxiang City(No.S10004);the Science and Technology Innovation Program of Henan Institute of Science and Technology
The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the p...
关键词：SiC crystal substrate alumina abrasive chemical mechanical polishing material removal rate polishing slurry 
Effect of copper slurry on polishing characteristics被引量：11
《Journal of Semiconductors》2011年第11期172-176,共5页胡轶 刘玉岭 刘效岩 王立冉 何彦刚 
supported by the Special Project Items No.2 in the National Long-Term Technology Development Plan,China(No.2009ZX02308)
The composition of the polishing solution is optimized by investigating the impact of the WIWNU （the so-called within-wafer-non-uniformity WIWNU） and the removal rate （RR） on the polishing characteristics of coppe...
关键词：copper slurry chemical mechanical planarization WIWNU 
Cleaning method of InSb [111] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy
《Journal of Semiconductors》2011年第5期146-148,共3页Gh.Sareminia F.Zahedi Sh.Eminov Ar.Karamian 
The crystal structure of InSb [111] A/B surfaces shows that this structure is polarized. This means that the surfaces of InSb [111] A and InSb [1^-1^- 1^-] B contain two different crystallized directions and they have...
关键词：cleaning lnSb LAPPING POLISHING InSb [1^-1^- 1^-] B 
An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers被引量：2
《Journal of Semiconductors》2006年第3期506-510,共5页霍凤伟 康仁科 郭东明 赵福令 金洙吉 
国家自然科学基金(批准号:50390061);国家杰出青年科学基金(批准号:50325518)资助项目~~
We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of...
关键词：silicon wafer subsurface damage angle polishing defect etching wedge fringes 
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