SEMI-INSULATING

作品数：34被引量：18H指数：2
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相关领域：电子电信更多>>
相关作者：赵有文林兰英王超张玉明张义门更多>>
相关机构：中国科学院河北半导体研究所香港大学西安电子科技大学更多>>
相关期刊：《Chinese Physics Letters》《Journal of Energy and Power Engineering》《Science Bulletin》《Science China(Information Sciences)》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划天津市自然科学基金中国博士后科学基金更多>>
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ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light被引量：1
《Journal of Semiconductors》2009年第12期9-12,共4页程萍 张玉明 张义门 郭辉 
supported by the National Natural Science Foundation of China(No.60606022);the Advanced Fund(No.9140A08050508);the Applied Materials Innovation Fund (Nos.XA-AM-200607,XA-AM-200704)
The intrinsic defects in epitaxial semi-insulating 4H-SiC prepared by low pressure chemical vapor deposition （LPCVD） are studied by electron spin resonance （ESR） with different illumination times. The results show...
关键词：electron spin resonance low pressure chemical vapor deposition intrinsic defects semi-insulating 4H-SiC 
Quenched-Domain Mode of Photo-Activated Charge Domain in Semi-Insulating GaAs Devices
《Journal of Semiconductors》2008年第10期1913-1916,共4页田立强 施卫 
国家自然科学基金(批准号:50477011);西安理工大学优秀博士研究基金(批准号:207-210006)资助项目~~
The quenched domain mode of the photo-activated charge domain （PACD） in semi-insulating （SI） GaAs photoconductive semiconductor switches （PCSSs） is observed. We find that the quenched domain is induced by the in...
关键词：photoconducting switch quenched domain mode equivalent-circuit 
A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium
《Journal of Semiconductors》2008年第2期206-209,共4页王超 张义门 张玉明 王悦湖 徐大庆 
国家自然科学基金(批准号:60376001);教育部重点项目(批准号:106150);西安应用材料基金(批准号:XA-AM-200607)资助项目~~
A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the intentional doping of vanadium. Because we found nitrogen to be the principal shallow donor impurity in SiC by second...
关键词：6H-SIC SEMI-INSULATING vanadium doping COMPENSATION vanadium acceotor level 
Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC
《Journal of Semiconductors》2007年第11期1701-1705,共5页王超 张义门 张玉明 郭辉 徐大庆 王悦湖 
国家自然科学基金(批准号:60376001);国家重点基础研究发展规划(批准号:2002CB311904);国防基础研究规划(批准号:51327020202)资助项目~~
The diffusion behavior of vanadium （V） implanted in SiC is investigated by secondary ion mass spec- trometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not ob- s...
关键词：ohmic contact semi-insulating SiC V ion implantation diffusion carbon vacancies 
Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP
《Journal of Semiconductors》2002年第10期1041-1045,共5页赵有文 罗以琳 冯汉源 C.D.Beling 林兰英 
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect,current-voltage ( I-V ),photoluminescence spectroscopy (PL) and photocurrent spectroscopy(PC)measurem...
关键词：INP semi-insulation DEFECTS 
Investigation of Residual Donor Defects in Undopedan d Fe-Doped LEC InP
《Journal of Semiconductors》2002年第5期455-458,共4页赵有文 孙聂枫 冯汉源 C.D.Beling 孙同年 林兰英 
The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscop...
关键词：indium phosphide SEMI-INSULATING donor defect 
Preparation of Semi-Insulating Material by Annealing Undoped InP
《Journal of Semiconductors》2002年第3期285-289,共5页赵有文 董宏伟 焦景华 赵建群 林兰英 孙聂枫 孙同年 
Semi insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron ...
关键词：indium phosphide semi  insulating ANNEALING 
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