HOT-CARRIER

作品数：18被引量：14H指数：3
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相关领域：电子电信更多>>
相关作者：刘斯扬钱钦松孙伟锋王金延张兴更多>>
相关机构：北京大学东南大学西安电子科技大学更多>>
相关期刊：《InfoMat》《Chinese Physics B》《npj Computational Materials》《Journal of Electronics(China)》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划更多>>
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Hot-Carrier-Induced Defects Distribution and Coupling Effect of the Front and Back Interface Degradation in SOI nMOSFET＇s Operating in a Bi-MOS Hybrid Mode
《Chinese Journal of Electronics》2004年第1期69-74,共6页HUANGRu WANGJinyan HEJin YUMin ZHANGXing WANGYangyuan 
In this paper based on the forward gated-diode configuration, the hot carrier behavior of the SOI (Silicon-on-insulator) nMOSFET's operating in a Bi-MOS hybrid mode (abbreviated as Bi-nMOSFET) is investigated. The per...
关键词：热载流子 选通二极管 SOI MOSFET Bi-MOS混合方式 耦合效果 
FORWARD GATED-DIODE METHOD FOR EXTRACTING HOT-CARRIER-STRESS-INDUCED BACK INTERFACE TRAPS IN SOI/NMOSFETs
《Journal of Electronics(China)》2002年第3期332-336,共5页He Jin Zhang Xing Huang Ru Wang Yangyuan(institute of Microelectronics, Peking University, Beijing 100871) 
special funds of major state basic research projects (G20000365)
The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method dir...
关键词：Hot-carrier-stress Back interface traps R-G current Gated-diode SOI 
Channel Hot-Carrier-Induced Breakdown of PDSOI NMOSFET's
《Journal of Semiconductors》2001年第8期1038-1043,共6页刘红侠 郝跃 朱建纲 
中国国家先进研究基金资助项目 (批准号 :982 5 741)
The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX wafer.The gate oxide properties are considered to analyze the channel hot-c arrier effects...
关键词：Hot-Carrier Effects (HCE) device lifetime SOI  NMOSFET's SIMOX 
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