云南高校图书馆联盟文献共享服务平台- FLIP-CHIP

FLIP-CHIP: 作品数：22被引量：21H指数：2; 导出分析报告; 相关作者：李宏斌乐立鹏顾靖俞宏坤更多>>; 相关机构：河北工业大学中国航天北京微电子技术研究所北京时代民芯科技有限公司复旦大学更多>>; 相关期刊：《Chinese Physics B》《集成电路应用》《Journal of Electronics Cooling and Thermal Control》《Microsystems & Nanoengineering》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划福建省自然科学基金国家高技术研究发展计划更多>>

Small-size temperature/high-pressure integrated sensor via flip-chip method: 《Microsystems & Nanoengineering》2024年第4期153-162,共10页Mimi Huang Xiaoyu Wu Libo Zhao Xiangguang Han Yong Xia Yi Gao Zeyu Cui Cheng Zhang Xiaokai Yang Zhixia Qiao Zhikang Li Feng Han Ping Yang Zhuangde Jiang; supported in part by the National Key Research&Development(R&D)Plan(2022YFB3205800);the National Natural Science Foundation of China(52305618).; Hydraulic technology with smaller sizes and higher reliability trends,including fault prediction and intelligent control,requires high-performance temperature and pressure-integrated sensors.Current designs rely on pl...; 关键词：SIZE CORNERS SIZES

Preparation and atmospheric wet-reflow of indium microbump for low-temperature flip-chip applications: 《Advances in Manufacturing》2023年第2期203-211,共9页Wen-Hui Zhu Xiao-Yu Xiao Zhuo Chen Gui Chen Ya-Mei Yan Lian-Cheng Wang Gang-Long Li; funded by the National Natural Science Foundation of China(Grant No.U20A6004);the Natural Science Foundation of Hunan Province(Grant No.2021JJ40734);the State Key Laboratory of High Performance Complex Manufacturing(Grant No.ZZYJKT2020-08);the Key Project of Science and Technology of Changsha(Grant No.kq2102005).; An urgent demand for lowering bonding temperature has been put forward by advanced flip-chip integration such as micro-LED packaging and heterogeneous integration of semiconductor devices.Indium microbump with low-mel...; 关键词：Flip chip REFLOW Indium microbump Au-In intermetallics

Structure, Chemical State and Luminescent Properties of Ce,Gd：YAG Transparent Ceramic for Flip-chip White LED Application被引量：2: 《Chinese Journal of Structural Chemistry》2018年第6期948-954,共7页邓种华陈剑刘著光张卫峰黄集权黄秋凤郭旺曹永革; Supported by the Major Program for Research on LED of Chinese Academy of Science(KZCC-EW-106);the National Key Research and Development Program of China(2016YFB0701003);the Natural Science Foundation of Fujian Province(2015j01231); Ce,Gd：YAG transparent ceramic was prepared by tape casting and solid state reaction method. Meanwhile, its crystal structure, chemical state and luminous properties were discussed. The prepared samples are identified...; 关键词：Ce Gd：YAG crystal structure TRIVALENT fluorescence and luminescence

Plasma清洗在Flip-Chip工艺中的重要作用被引量：1: 《科技风》2017年第24期72-74,共3页陈天虎姚泽鑫李键城; 随着半导体芯片封装技术的发展,倒装芯片封装技术,其杰出的电气和热性能,高I/O引脚数,以及其封装集成较高的优势,使其在芯片封装行业中得到了快速的发展。芯片的高密度引脚封装也其对封装可靠性也提出了更高的要求,而在FlipChip工艺过...; 关键词：PLASMA FLIP-CHIP 推力测试水滴角键合

Enhanced Luminescence of InGaN-Based 395 nm Flip-Chip Near-Ultraviolet Light-Emitting Diodes with Al as N-Electrode: 《Chinese Physics Letters》2017年第7期114-117,共4页徐瑾张伟彭孟戴江南陈长清; Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400901 and2016YFB0400804;the Key Laboratory of Infrared Imaging Materials and Detectors of Shanghai Institute of Technical Physics of Chinese Academy of Sciences under Grant NoⅡMDKFJJ-15-07;the National Natural Science Foundation of China under Grant Nos 61675079,11574166 and 61377034;the China Postdoctoral Foundation under Grant No 2016M602287; High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395nm flip-chip near-ultraviolet （UV） light-emitting diodes. The Al-only metal layer could form the Ohmic contact ...; 关键词：GaN Enhanced Luminescence of InGaN-Based 395 nm Flip-Chip Near-Ultraviolet Light-Emitting Diodes with Al as N-Electrode AL

中芯国际与长电科技联手打造中国IC制造产业链被引量：5: 《集成电路应用》2014年第3期14-15,共2页许诺; 凸块是先进的半导体制造前段工艺良率测试所必须的,也是未来三维晶圆级封装技术的基础。随着移动互联网市场规模的不断扩大,以及40纳米及28纳米等先进IC制造工艺的大量采用,终端芯片对凸块加工的需求急剧增长。中芯国际与长电科技联手...; 关键词：集成电路封装 FLIP-CHIP Bumping

Thermal simulation and analysis of flat surface flip-chip high power light-emitting diodes被引量：2: 《Journal of Semiconductors》2013年第12期49-52,共4页陈茂兴徐晨许坤郑雷; Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipatio...; 关键词：light-emitting diode FLIP-CHIP finite-element model junction temperature

Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods: 《Journal of Semiconductors》2013年第11期49-52,共4页安铁雷孙波魏同波赵丽霞段瑞飞廖元勋李晋闽伊福廷; supported by the National Natural Science Foundation of China(Nos.61274040,61274008);the National Basic Research Program of China(No.2011CB301902);the National High Technology Program of China(No.2011AA03A103); The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes （FS- FCLEDs） using two-step roughening methods is investigated. The output power of LEDs fabricated by using one-step and tw...; 关键词：freestanding GaN flip chip LED CSCI wet etching light extraction

Investigation of Thermal Characterization of a Thermally Enhanced FC-PBGA Assembly被引量：1: 《Journal of Electronics Cooling and Thermal Control》2013年第3期85-93,共9页C. F. Lin G. H. Wu S. H. Ju; In this paper, three-dimensional finite element analysis using the commercial ANSYS software is performed to study the thermal performance of a thermally enhanced FC-PBGA (flip-chip plastic ball grid array) assembly i...; 关键词：Polymer-Based Materials FLIP-CHIP PACKAGING FINITE ELEMENT Methods

Preparation of GaN-on-Si based thin-film flip-chip LEDs: 《Journal of Semiconductors》2013年第5期35-37,共3页章少华封波孙钱赵汉民; GaN based MQW epitaxial layers were grown on Si （111） substrate by MOCVD using AIN as the buffer layer. High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and...; 关键词：silicon substrate GAN flip chip LED

FLIP-CHIP