云南高校图书馆联盟文献共享服务平台- OXIDE

OXIDE: 作品数：1123被引量：2030H指数：14; 导出分析报告; 相关领域：理学更多>>; 相关作者：谭长华许铭真丁士明张志纯江莞更多>>; 相关机构：中国科学院北京大学厦门大学华中科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>

Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems: 《Journal of Semiconductors》2023年第9期3-10,共8页Runxiao Shi Tengteng Lei Zhihe Xia Man Wong; supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691;Grant GHP/018/21SZ from the Innovation and Technology Fund;Grant SGDX20211123145404006 from the Science and Technology Program of Shenzhen;Fundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001。; Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of tu...; 关键词：flexible electronics metal-oxide semiconductor thin-film transistor dual gate FLUORINATION analog front-end system sensors

Anisotropic optical and electric properties of β-gallium oxide被引量：1: 《Journal of Semiconductors》2023年第7期8-22,共15页Yonghui Zhang Fei Xing; supported by the National Natural Science Foundation of China(Grant No.61505109);Youth Innovative Talents Attracting and Cultivating Plan of Colleges and Universities in Shandong Province(No.21);Youth Innovation Team of colleges and universities in Shandong Province(Grant No.2022KJ223);Shandong Provincial Natural Science Foundation(Grant No.ZR2021QF020).; The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flo...; 关键词：gallium oxide ANISOTROPIC DICHROISM POLARIZATION MONOCLINIC

Transparent conductive stannic oxide coatings employing an ultrasonic spray pyrolysis technique:The relevance of the molarity content in the aerosol solution for improvement the electrical properties: 《Journal of Semiconductors》2022年第2期66-73,共8页L.Castañeda; the financial support from the Escuela Superior de Medicina,Instituto Politécnico Nacional,through Project No.20210385。; Highly transparent conductive stoichiometric nanocrystalline stannic oxide coatings were deposited onto Corning®EAGLE XG®slim glass substrates.Including each coating,it was deposited for various concentrations in the ...; 关键词：stannic oxide COATINGS ultrasonic spray pyrolysis

The investigation of DARC etch back in DRAM capacitor oxide mask opening被引量：1: 《Journal of Semiconductors》2021年第7期88-92,共5页Jianqiu Hou Zengwen Hu Kuowen Lai Yule Sun Bo Shao Chunyang Wang Xinran Liu Karson Liu; Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon ox...; 关键词：dynamic random access memory(DRAM) oxide mask open of capacitor capacitive coupled plasma(CCP)etch dielectric anti-reflective coating(DARC) etch back(EB)

Self-assembled monolayers enhance the performance of oxide thin-film transistors被引量：1: 《Journal of Semiconductors》2021年第3期7-10,共4页Wensi Cai Zhigang Zang Liming Ding; W.Cai and Z.Zang thank National Natural Science Foundation of China(11974063);Natural Science Foundation of Chongqing(cstc2020jcyj-jqX0028);China Postdoctoral Science Foundation(2020M683242);and Chongqing Special Postdoctoral Science Foundation(cstc2020jcyj-bshX0123)for financial support.L.Ding thanks National Key Research and Development Program of China(2017YFA0206600);National Natural Science Foundation of China(51773045,21772030,51922032,and 21961160720)for financial support.; Thin-film transistors(TFTs)based on oxide semiconductors have gained a lot of attention in applications such as displays and sensors particularly in recent years due to the advantages of oxide semiconductors like high...; 关键词：TRANSISTORS FILM PERFORMANCE

Design,modelling,and simulation of a floating gate transistor with a novel security feature: 《Journal of Semiconductors》2020年第10期33-37,共5页H.Zandipour M.Madani; This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,...; 关键词：floating gate transistor(FGT) scanning capacitance microscopy(SCM) metal–oxide–semiconductor(MOS)capacitance non-volatile memory(NVM) reverse engineering

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors被引量：1: 《Journal of Semiconductors》2019年第4期43-47,共5页Shuxin Tan Takashi Egawa; supported by the National Science Foundation of China(No.61504071); AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors(MIS-HEMTs) on a silicon substrate were fabricated with silicon oxide as a gate dielectric by sputtering deposition and electron-beam(EB) eva...; 关键词：ALGAN/GAN MIS-HEMTs SPUTTERING deposition ELECTRON-BEAM evaporation silicon OXIDE ELECTRICAL properties

Gallium oxide: promise to provide more efficient life被引量：2: 《Journal of Semiconductors》2019年第1期1-2,共2页Yue Hao Jincheng Zhang Yue Hao; Despite being the long-time mainstream semiconductor for both logic and power devices, Silicon is now facing its dilemma and limitation of scalability and material potential.Especially for power devices, people are de...; 关键词：GALLIUM OXIDE PROMISE provide MORE EFFICIENT LIFE

Bulk gallium oxide single crystal growth被引量：3: 《Journal of Semiconductors》2019年第1期3-4,共2页Xutang Tao; Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its...; 关键词：GALLIUM OXIDE ULTRA-WIDE bandgap SEMICONDUCTOR CRYSTAL growth

A review of the most recent progresses of state-of-art gallium oxide power devices被引量：14: 《Journal of Semiconductors》2019年第1期27-44,共18页Hong Zhou Jincheng Zhang Chunfu Zhang Qian Feng Shenglei Zhao Peijun Ma Yue Hao; Until very recently, gallium oxide(Ga_2O_3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic e...; 关键词：GALLIUM OXIDE POWER ELECTRONICS POWER devices

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