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PHYSICAL: 作品数：1315被引量：2251H指数：16; 导出分析报告; 相关领域：医药卫生更多>>; 相关作者：励建安房喻刘阳陈思同唐炎更多>>; 相关机构：中国石油大学（北京）复旦大学北京体育大学苏州大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Integration of wearable electronics and heart rate variability for human physical and mental well-being assessment: 《Journal of Semiconductors》2025年第1期58-76,共19页Feifei Yin Jian Chen Haiying Xue Kai Kang Can Lu Xinyi Chen Yang Li; supported in part by National Science and Technology Major Project from the Minister of Science and Technology of China(2018AAA0103100).; Heart rate variability(HRV)that can reflect the dynamic balance between the sympathetic nervous and parasympathetic nervous of human autonomic nervous system(ANS)has attracted considerable attention.However,traditiona...; 关键词：wearable electronics HRV analysis physical and mental well-being machine learning stress detection

Recent progress of physical failure analysis of GaN HEMTs被引量：2: 《Journal of Semiconductors》2021年第5期48-59,共12页Xiaolong Cai Chenglin Du Zixuan Sun Ran Ye Haijun Liu Yu Zhang Xiangyang Duan and Hai Lu; supported by the National Key R&D Program of China (No. 2017YFB0403000)。; Gallium nitride(GaN)-based high-electron mobility transistors(HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. Ho...; 关键词：GAN high electron mobility transistors physical analysis failure mechanism

Physical vapor deposited 2D bismuth for CMOS technology: 《Journal of Semiconductors》2020年第8期8-24,共17页Hanliu Zhao Xinghao Sun Zhengrui Zhu Wen Zhong Dongdong Song Weibing Lu Li Tao; supported by the National Natural Science Foundation of China(No.51602051);Jiangsu Province Innovation Talent Program;Jiangsu Province Six-Category Talent Program(No.DZXX-011).; Two-dimensional(2D)bismuth,bismuthene,is an emerging pnictogen family member that has received increasing research attention in the past few years,which could yield exotic electrical,thermal,and optical properties due...; 关键词：properties. structure. BISMUTH

Extraction of physical Schottky parameters using the Lambert function in Ni/AIGaN/GaN HEMT devices with defined conduction phenomena: 《Journal of Semiconductors》2017年第1期95-99,共5页O.Latry A.Divay D.Fadil P.Dherbécourt; Project supported by the French Department of Defense(DGA); Electrical characterization analyses are proposed in this work using the Lambert function on Schottky junctions in GaN wide band gap semiconductor devices for extraction of physical parameters.The Lambert function is ...; 关键词：GaN Schottky junction conduction mechanisms Lambert function parameters extraction

A physical model of hole mobility for germanium-on-insulator pMOSFETs被引量：1: 《Journal of Semiconductors》2016年第4期50-56,共7页袁文宇徐静平刘璐黄勇程智翔; Project supported by the National Natural Science Foundation of China(Nos.61274112,61176100,61404055); A physical model of hole mobility for germanium-on-insulator p MOSFETs is built by analyzing all kinds of scattering mechanisms, and a good agreement of the simulated results with the experimental data is achieved, co...; 关键词：GeOI pMOSFETs hole mobility scattering mechanisms

Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure: 《Journal of Semiconductors》2015年第9期71-74,共4页韩锴王晓磊王文武; Project supported by the National Natural Science Foundation of China(Nos.61404093,50932001);the Doctoral Scientific Research Foundation of Weifang University(No.014BS02); The physical origin of the flatband voltage （VFB） roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface be...; 关键词：high-k dielectric band alignment VFB roll off

A new physical unclonable function architecture: 《Journal of Semiconductors》2015年第3期121-126,共6页白创邹雪城戴葵; Project supported by the National Natural Science Foundation of China(No.61376031); This paper describes a new silicon physical unclonable function （PUF） architecture that can be fabri- cated on a standard CMOS process. Our proposed architecture is built using process sensors, difference amplifier,...; 关键词：physical unclonable functions digital identification process sensors voting mechanism diffusion algorithm

A physical surface-potential-based drain current model for polysilicon thin-film transistors: 《Journal of Semiconductors》2012年第3期32-37,共6页李希越邓婉玲黄君凯; Project supported by the Key Project of Chinese Ministry of Education(No.211206);the Fundamental Research Funds for the Central Universities (No.21611422);the Foundation for Distinguished Young Talents in Higher Education of Guangdong,China(No.LYM10032); A physical drain current model of polysilicon thin-film transistors based on the charge-sheet model, the density of trap states and surface potential is proposed.The model uses non-iterative calculations,which are sin...; 关键词：polysilicon thin-film transistors surface potential drain current model trap state distribution

Effect of rhenium doping on various physical properties of single crystals of MoSe_2: 《Journal of Semiconductors》2012年第1期20-24,共5页Mihir M.Vora Aditya M.Vora; Effect of rhenium doping is examined in single crystals of MoSe2 viz. MoRe0.005Sel.995, MoReo.o01 Sel.999 and Moo.995Re0.005Se2, which is grown by using the direct vapor transport （DVT） technique. The grown crystals...; 关键词：structural properties electrical properties optical properties single crystals

Physical properties of sprayed antimony doped tin oxide thin films:The role of thickness被引量：4: 《Journal of Semiconductors》2011年第5期10-17,共8页A.R.Babar S.S.Shinde A.V.Moholkar C.H.Bhosale J.H.Kim K.Y.Rajpure; Transparent conducting antimony doped tin oxide （Sb：SnO2） thin films have been deposited onto pre- heated glass substrates using a spray pyrolysis technique by varying the quantity of spraying solution. The structu...; 关键词：SEMICONDUCTORS MICROSTRUCTURE optical properties electrical properties

PHYSICAL