云南高校图书馆联盟文献共享服务平台- QUANTUM

检索规则说明：AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：范例一： (K=图书馆学 OR K=情报学) AND A=范并思　　　　范例二：J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual

全部期刊核心期刊 EI来源期刊 SCI来源期刊 CA来源期刊 CSCD来源期刊 CSSCI来源期刊

Measurement of Spin Singlet-Triplet Qubit in Quantum Dots Using Superconducting Resonator: 《Chinese Physics Letters》2020年第2期6-10,共5页Xing-Yu Zhu Tao Tu Ao-Lin Guo Zong-Quan Zhou Guang-Can Guo; the National Basic Research Programme of China(No.2017YFA0304100);the National Natural Science Foundation of China(No.11974336).; The spin qubit in quantum dots is one of the leading platforms for quantum computation.A crucial requirement for scalable quantum information processing is the high efficient measurement.Here we analyze the measuremen...; 关键词：computation. quantum measurement.

Anti-Reflection Characteristics of Si Nanowires for Enhanced Photoluminescence from CdTe/CdS Quantum Dots: 《Chinese Physics Letters》2018年第5期91-94,共4页Hong-Yu Wang Dan Shan Ling Xu; Supported by the Qing Lan Project of the Higher Education Institutions of Jiangsu Province,Qing Lan Project of Yangzhou Polytechnic Institute,the Natural Science Foundation of Yangzhou City under Grant No YZ2016123;the National Natural Science Foundation of China under Grant No 61376004; CdTe/CdS quantum dots（QDs） are fabricated on Si nanowires（NWs） substrates with and without Au nanoparticles（NPs）. The formation of Au NPs on Si NWs can be certified as shown in scanning electron microscopy image...; 关键词：Si QDS Anti-Reflection Characteristics of Si Nanowires for Enhanced Photoluminescence from CdTe/CdS Quantum Dots CdS

Effect of In_xGa_(1-x)As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-Ⅱ Quantum Dots Grown on InP (100) Substrates: 《Chinese Physics Letters》2016年第9期120-123,共4页陈虞龙高优陈弘张辉何苗李述体郑树文; Supported by the Science and Technology Planning Projects of Guangdong Province under Grant Nos 2014B050505020,2015B010114007 and 2014B090904045;the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20134407110008;the Guangzhou Science and Technology Project of Guangdong Province under Grant No 2016201604030027;the Zhongshan Science and Technology Project of Guangdong Province under Grant No 2013B3FC0003; The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the ...; 关键词：INGAAS in it GASB Quantum Dots Grown on InP SUBSTRATES x)As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type of on

Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates: 《Chinese Physics Letters》2016年第4期52-55,共4页王霆刘会赟张建军; Supported by the National Natural Science Foundation of China under Grant Nos 11434010,11574356 and 11504415;the Funds from the Royal Society,the Defense Science Technology Laboratory and UK Engineering and Physics Research Council; The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantu...; 关键词：GAAS INAS Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates of SI on

Controlling the Goos-H?nchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots: 《Chinese Physics Letters》2016年第1期55-59,共5页R.Nasehi S.H.Asadpour H.Rahimpour Soleimani M.Mahmoudi; We study the controlling of the Goos-Hanchen （GH） shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot （QD） nanostructures with electron tunneling and incoherent pumping fi...; 关键词：GaAs on it is of Controlling the Goos-H?nchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots for in

Miniband Formation in GaN/AlN Constant-Total-Effective-Radius Multi-shell Quantum Dots: 《Chinese Physics Letters》2015年第11期136-139,共4页Solaimani M.; Supported by the Iranian Nanotechnology Initiative Council;the Shahrood University of Technology; We study the procedure of miniband formation in CaN/lAIN constant-total-effective-radius multi-shell quantum dots （CTER-MSQDs） by calculating the subband energies. We find a different behavior of the miniband widths...; 关键词：Miniband Formation in GaN/AlN Constant-Total-Effective-Radius Multi-shell Quantum Dots GaN

Optimal Performance Analysis of a Three-Terminal Thermoelectric Refrigerator with Ideal Tunneling Quantum Dots: 《Chinese Physics Letters》2015年第10期17-21,共5页苏豪施志成何济洲; Supported by the National Natural Science Foundation of China under Grant No 11365015; The model of a three-terminal thermoelectric refrigerator with ideal tunneling quantum dots is established. It consists of a cavity connected to two quantum dots embedded between two electron reservoirs at different t...; 关键词：COP Optimal Performance Analysis of a Three-Terminal Thermoelectric Refrigerator with Ideal Tunneling Quantum Dots

Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires: 《Chinese Physics Letters》2015年第7期198-201,共4页杨爽窦秀明喻颖倪海桥牛智川江德生孙宝权; Supported by the National Key Basic Research Program of China under Grant No 2013CB922304;the National Natural Science Foundation of China under Grant Nos 11474275 and 11204297; A highly efficient single-photon source based on a semiconductor quantum dot （QD） is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nano...; 关键词：Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires QDs

Single- and Few-Electron States in Deformed Topological Insulator Quantum Dots: 《Chinese Physics Letters》2015年第4期101-104,共4页李健张东; Supported by the National Natural Science Foundation of China under Grant No 11434010;the National Basic Research Program of China under Grant No 2011CB922204; We theoretically investigate the single- and few-electron states in deformed HgTe quantum dots （QDs） with an inverted band structure using the full configuration interaction method. For the circular and deformed QD,...; 关键词：QDS SINGLE and Few-Electron States in Deformed Topological Insulator Quantum Dots

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots: 《Chinese Physics Letters》2014年第11期70-73,共4页赵婉茹翁国恩梁明明李增成刘建平张江勇张保平; Supported by the National Natural Science Foundation of China under Grant Nos 61274052 and 61106044, the Doctoral Program Foundation of Institutions of Higher Education of China under Grant No 20110121110029, the Fundamental Research Funds for the Central Universities under Grant No 2013121024, and the Key Lab of Nanodevices and Nanoapplications, Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 14ZS02.; Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL...

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

QUANTUM_DOTS

检索结果分析

下载全文

高级检索检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

QUANTUM_DOTS

检索结果分析

下载全文

用户登录

高级检索检索式检索