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RICH: 作品数：1550被引量：2697H指数：16; 导出分析报告; 相关领域：医药卫生更多>>; 相关作者：秦高梧任玉平黄爱凤胡美馨蒋东红更多>>; 相关机构：浙江师范大学中国科学院大学浙江大学北京大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金北京市自然科学基金更多>>

Fermi Rubik's Cube in High-Pressure Induced Chlorine-Rich Compounds: 《Chinese Physics Letters》2024年第10期78-83,共6页Jun Kong Lei Su Haixu Cui Hairui Ding Jingyu Hou Chunxia Chi Shiyang Liu Xiang-Feng Zhou Hui-Tian Wang Xiao Dong; supported by the Fundamental Research Funds for the Central Universities(Grant No.010-63243095);the National Science Foundation of China(Grant Nos.92263101 and 12174200)。; In the quasi-free electron model,the Fermi surface spreads into a sphere in the Brillouin zone,i.e.,the Fermi sphere.The Fermi sphere exists widely in metal systems,no matter whether the crystal is in a body-center cu...; 关键词：surface. FERMI CUBIC

Systematical High-Pressure Study of Praseodymium Nitrides in N-Rich Region: 《Chinese Physics Letters》2024年第6期67-87,共21页刘冉刘爽张盈王鹏姚震; financially supported by the National Key R&D Program of China(Grant No.2023YFA1406200);the National Natural Science Foundation of China(Grant Nos.12174143 and U2032215)。; We investigate high-pressure phase diagrams of Pr–N compounds by proposing five stable structures(PnmaPr N,Ⅰ4/mmm-PrN_(2),C2/m-PrN_(3),P■-PrN_(4),and R3-PrN_(8))and two metastable structures(P■-PrN_(6)and P■-PrN_...; 关键词：AMBIENT STRUCTURE LAYER

Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates: 《Chinese Physics Letters》2018年第4期103-107,共5页Lei Zhu Yong-Wei Chang Nan Gao Xin Su YeMin Dong Lu Fei Xing Wei Xi Wang; Supported by the National Natural Science Foundation of China under Grant Nos 61376021 and 61674159;the Program of Shanghai Academic/Technology Research Leader under Grant No 17XD1424500; Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator（TR-SOI） substrates are studied. It is found that the resistivity of the trap-rich layer of genera...; 关键词：SOI Si HR Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates TR

Ground State Structures of Boron-Rich Rhodium Boride:An Ab Initio Study: 《Chinese Physics Letters》2018年第1期55-58,共4页Bin-Hua Chu Yuan Zhao Jin-Liang Yan Da Li; Supported by the Natural Science Foundation of Shandong Province under Grant Nos ZR2016AP02,ZR2016FM38 and ZR2016EMP01;the Innovation Project of Ludong University under Grant No LB2016013;the Open Project of State Key Laboratory of Superhard Materials of Jilin University under Grant No 201605;the National Natural Science Foundation of China under Grant Nos 11704170 and 61705097; A new phase of RhB4is predicted based on first-principles calculations.The new phase belongs to the orthorhombic Pnnm space group,named as o-RhB4,and analysis of the calculated enthalpy shows that o-RhB4belongs to the...

A Wafer-Level Sn-Rich Au-Sn Bonding Technique and Its Application in Surface Plasmon Resonance Sensors被引量：1: 《Chinese Physics Letters》2014年第5期118-121,共4页毛旭吕兴东魏伟伟张喆杨晋玲祁志美杨富华; Supported by the Major National Scientific Research Plan of China under Grant No 2011CB933102, and the National Natural Science Foundation of China under Grant Nos 61234007 and 61201104.; Sn-rich Au Sn solder bonding is systematically investigated. High shear strength （64 MPa） and good hermeticity （a leak rate lower than 1 × 10-7 torr.1/s） are obtained for Au-Sn solder with 54wt% Sn bonded at 310...

A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems被引量：1: 《Chinese Physics Letters》2013年第7期127-130,共4页A.Limcharoen C.Pakpum P.Limsuwan; Supported by the Industry/University Cooperative Research Center in Data Storage Technology and Applications,King Mongkut’s Institute of Technology Ladkrabang and the National Electronics and Computer Technology Center,the National Science and Technology Development Agency;the Commission of Higher Education under the National Research University(NRU)Project.; Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition...; 关键词：REMOVE VOLATILE DEPOSITION

Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells: 《Chinese Physics Letters》2013年第7期135-137,共3页ZHANG Xiao-Fu LI Yu-Dong GUO Qi LU Wu; Supported by the National Natural Science Foundation of China under Grant No 11275262.; We investigate the photoluminescence(PL)emission from InGaN/GaN multiple quantum-well structures before and after 1 MeV electron irradiation.The PL peak intensity exhibits a slight enhancement after low-dose electron ...; 关键词：INGAN/GAN Electron Quantum

Characteristics of an Indium-Rich InGaN p-n Junction Grown on a Strain-Relaxed InGaN Buffer Layer: 《Chinese Physics Letters》2013年第4期174-176,共3页YANG Lian-Hong ZHANG Bao-Hua GUO Fu-Qiang; the Opening Project of Xinjiang Laboratory of Phase Transitions and Microstructures of Condensed Matters(Nos XJDX0912-2012-03,XJDX0912-2012-02);the Project of Changji Collge(Nos 2011YJYB001,2011YJYB006).; An indium-rich InGaN p-n junction is grown on a strain-relaxed InGaN buffer layer.The results show that the n-InGaN is grown coherently on the buffer layer but the p-InGaN layer exhibits a partial strain relaxation.Th...; 关键词：INGAN relaxed INDIUM

Sb Rich Ge_(2)Sb_(5)Te_(5) Alloy for High-Speed Phase Change Random Access Memory Applications: 《Chinese Physics Letters》2012年第10期221-223,共3页ZHANG Qi SONG San-Nian XU Feng; Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906003,60906004,61006087,61076121,61106055).; Sb rich Ge_(2)Sb_(5)Te_(5) materials are investigated for use as the storage medium for high-speed phase change memory(PCM).Compared with conventional Ge2Sb2Te5,Ge_(2)Sb_(5)Te_(5) films have a higher crystallisation t...; 关键词：resistance FASTER RETENTION

Relativistic Magnetosonic Soliton in a Negative-Ion-Rich Magnetized Plasma: 《Chinese Physics Letters》2008年第8期2930-2933,共4页王云良周忠祥路彦珍倪晓东申江张禹; Supported by the National Natural Science Foundation of China under Grant No 10747109, and the Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20070008001.; Two-dimensional （219） relativistic magnetosonic solitons in the negative-ion-rich plasma consisting of positive ions Ar＋, negative ions SF6 and electrons are investigated in the presence of an applied magnetic fiel...; 关键词：ACOUSTIC SOLITON MULTICOMPONENT PLASMA KORTEWEG-DEVRIES WAVES EQUATIONS

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