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SCALING: 作品数：634被引量：804H指数：11; 导出分析报告; 相关领域：理学更多>>; 相关作者：程昆朋张元良陈慧刘卫国胡云卿更多>>; 相关机构：天津大学中国科学院大学中国科学院同济大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors: 《Journal of Semiconductors》2024年第10期1-2,共2页Youla Yang Daixuan Wu He Tian Tian-Ling Ren; In recent years,there has been a significant increase in research focused on the growth of large-area single crystals.Rajan et al.[1]recently achieved the growth of large-area monolayers of transition-metal chalcogeni...; 关键词：silver EPITAXIAL dimensional

Large-area organic solar cells: 《Journal of Semiconductors》2022年第6期1-5,共5页Min Li Jilin Wang Liming Ding Xiaoyan Du; X.Du thanks National Natural Science Foundation of China(52103222);Natural Science Foundation of Shandong Province(ZR2021QA009);Taishan Scholar Foundation of Shandong Province(tsqn202103016);Qilu Young Scholar Program of Shandong University.L.Ding thanks the National Key Research and Development Program of China(2017YFA0206600);the National Natural Science Foundation of China(51922032 and 21961160720);the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02)for financial support.; Organic solar cells(OSCs)have made significant progress due to the fast advances in nonfullerene acceptors(NFAs)since 2015^([1−7]).The power conversion efficiency(PCE)for small-area single-junction OSCs is around 19%w...; 关键词：TECHNOLOGY SCALING

Preface to the Special Issue on Beyond Moore:Three-Dimensional(3D)Heterogeneous Integration: 《Journal of Semiconductors》2021年第2期1-2,共2页Yue Hao Huaqiang Wu Yuchao Yang Qi Liu Xiao Gong Genquan Han Ming Li; In the past few decades,the Moore’s Law has been the revolutionary force for our integrated circuit(IC)industry.However,the tremendous challenges faced in continuous transistor physical down-scaling and the unprecede...; 关键词：Integration SCALING INTEGRATE

Design technology co-optimization towards sub-3 nm technology nodes被引量：2: 《Journal of Semiconductors》2021年第2期6-8,共3页Genquan Han Yue Hao; Over the past half century,Moore’s Law has played a crucial role in the development of the semiconductor field,which depends on straightforwardly dimensional scaling with approximately a two-year cadence.Significant ...; 关键词：SCALING optimization STRAIGHT

Analysis and impact of process variability on performance of junctionless double gate VeSFET: 《Journal of Semiconductors》2017年第10期63-69,共7页T.Chaudhary G.Khanna; This paper presents an in-depth analysis of junctionless double gate vertical slit FET（JLDG VeSFET）device under process variability.It has been observed that junctionless FETs（JLDG VeSFET） are significantly less s...; 关键词：JLDG VeSFET process variation sensitivity SCALING short channel effects oxide thickness channel thickness threshold voltage

A 10 bit 200 MS/s pipeline ADC using loading-balanced architecture in 0.18 μm CMOS被引量：2: 《Journal of Semiconductors》2017年第7期103-110,共8页Linfeng Wang Qiao Meng Hao Zhi Fei Li; A new loading-balanced architecture for high speed and low power consumption pipeline analog-todigital converter（ADC） is presented in this paper. The proposed ADC uses SHA-less, op-amp and capacitor-sharing techniqu...; 关键词：pipeline ADC loading-balanced op-amp sharing SHA-Less MDAC scaling down

Scaling relation of domain competition on(2+1)-dimensional ballistic deposition model with surface diffusion: 《Journal of Semiconductors》2016年第9期12-17,共6页Kenyu Osada Hiroyasu Katsuno Toshiharu Irisawa Yukio Saito; During heteroepitaxial overlayer growth multiple crystal domains nucleated on a substrate surface compete with each other in such a manner that a domain covered by neighboring ones stops growing.The number density of ...; 关键词：domain competition ballistic deposition model Kardar-Parisi-Zhang universality class surface diffusion

Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory: 《Journal of Semiconductors》2015年第9期79-84,共6页李新开霍宗亮靳磊姜丹丹洪培真徐强唐兆云李春龙叶甜春; Project supported by the National Natural Science Foundation of China(Nos.61474137,61176073,61306107); This work presents a comprehensive analysis of 3D cylindrical junction-less charge trapping memory device performance regarding continuous scaling of the structure dimensions. The key device performance, such as progr...; 关键词：3D charge trapping devices vertical charge loss lateral charge migration semiconductor device simu-lation

A 10-bit 120-MS/s pipelined ADC with improved switch and layout scaling strategy被引量：3: 《Journal of Semiconductors》2015年第8期166-170,共5页周佳许丽丽李福乐王志华; A 10 bit, 120 MS/s two-channel pipelined analog-to digital converter （ADC） is presented. The ADC is featured with improved switch by using the body effect to improve its conduction performance. A scaling down strate...; 关键词：ADC PIPELINE body-effect scaling down parallel

14-bit 100 MS/s 121 mW pipelined ADC被引量：1: 《Journal of Semiconductors》2015年第6期142-147,共6页陈勇臻陈迟晓冯泽民叶凡任俊彦; Project supported by the National Key Technology R&D Program(No.2012BAI13B07); This paper presents a high-speed high-resolution pipelined ADC with low power and small area. The proposed ADC is designed based on the analysis of the stage scaling theory and the residual amplifiers are shared by tw...; 关键词：ADC PIPELINE low power stage scaling op-amp sharing COMPARATOR

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