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BUFFER_LAYER: 作品数：373被引量：330H指数：6; 导出分析报告; 相关作者：于军胜赵正平陈昊李亮蔡树军更多>>; 相关机构：电子科技大学清华大学河北半导体研究所中国科学院微电子研究所更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金国家高技术研究发展计划更多>>

Van der Waals Epitaxy of Anatase TiO2 on mica and Its Application as Buffer Layer: 《Chinese Physics Letters》2019年第7期107-110,共4页Han Xu Zhen-Lin Luo Chang-Gan Zeng Chen Gao; Supported by the National Key Research and Development Program of China under Grant No 2016YFA0300102;the National Natural Science Foundation of China under Grant Nos 11675179,11434009 and 11374010;the Fundamental Research Funds for the Central Universities under Grant No WK2340000065; MICAtronics, based on the functional oxide/mica heterostructures, has recently attracted much attention due to its potential applications in transparent, flexible electronics and devices. However, the weak van der Waa...; 关键词：MICAtronics oxide/mica HETEROSTRUCTURES functional OXIDES on MICA

Analysis of Effect of Zn(O,S) Buffer Layer Properties on CZTS Solar Cell Performance Using AMPS: 《Chinese Physics Letters》2016年第10期116-119,共4页林灵燕邱羽张禹张昊; Supported by the Guiding Project of Strategic Emerging Industries of Fujian Provincial Department of Science and Technology under Grant No 2015H0010;the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute of Ceramics of Chinese Academy of Sciences under Grant No SKL201404SIC;the Natural Science Foundation of Fujian Province under Grant No 2016J01751; The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the ...; 关键词：of in is CZTS O S Analysis of Effect of Zn Buffer Layer Properties on CZTS Solar Cell Performance Using AMPS on

Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition: 《Chinese Physics Letters》2015年第8期165-168,共4页王俊胡海洋贺云瑞邓灿王琦段晓峰黄永清任晓敏; Supported by the Fund of State Key Laboratory of Information Photonics and Optical Communications of Beijing University of Posts and Telecommunications;the National Basic Research Program of China under Grant No 2010CB327601;the Natural Science Foundational Science and Technology Cooperation Projects under Grant No 2011RR000100;the 111 Project of China under Grant No B07005;the Doctoral Program of Higher Specialized Research Fund under Grant No 20130005130001; The growth of GaAs epilayers on silicon substrates with a thin amorphous silicon （a-Si） buffer layer by met- alorganic chemical vapor deposition is investigated in detail. Combining with the two-step growth method, ...

AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer: 《Chinese Physics Letters》2015年第7期156-159,共4页李祥东张进成邹瑜马学智刘畅张苇杭温慧娟郝跃; Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002;National Natural Science Foundation of China under Grant Nos 11435010 and 61474086; We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the ...; 关键词：AlGaN Channel High Electron Mobility Transistors with an Al_xGa x)N/GaN Composite Buffer Layer

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer: 《Chinese Physics Letters》2014年第12期138-142,共5页周旭亮潘教青于红艳李士颜王宝军边静王圩; In the last two decades, m-v compound semi- conductor materials grown on elemental semiconduc- tor substrates have attracted much attention due to their potential applications in high-efficiency so- lar cells, photode...

Growth of Atomically Flat Ultra-Thin Ag Films on Si（111） by Introducing a √3×√3-Ga Buffer Layer: 《Chinese Physics Letters》2014年第12期143-146,共4页何杰辉姜利群邱静岚陈岚吴克辉; Growth of high-quality ultra-thin Ag film is of great interest from both scientific and technological viewpoints. First, ultra-thin metal fihns are model systems utilized to investigate quantum size effects （QSE）. W...

Characteristics of an Indium-Rich InGaN p-n Junction Grown on a Strain-Relaxed InGaN Buffer Layer: 《Chinese Physics Letters》2013年第4期174-176,共3页YANG Lian-Hong ZHANG Bao-Hua GUO Fu-Qiang; the Opening Project of Xinjiang Laboratory of Phase Transitions and Microstructures of Condensed Matters(Nos XJDX0912-2012-03,XJDX0912-2012-02);the Project of Changji Collge(Nos 2011YJYB001,2011YJYB006).; An indium-rich InGaN p-n junction is grown on a strain-relaxed InGaN buffer layer.The results show that the n-InGaN is grown coherently on the buffer layer but the p-InGaN layer exhibits a partial strain relaxation.Th...; 关键词：INGAN relaxed INDIUM

Germanium Nitride as a Buffer Layer for Phase Change Memory: 《Chinese Physics Letters》2012年第10期171-173,共3页ZHANG Xu LIU Bo PENG Cheng RAO Feng ZHOU Xi-Lin SONG San-Nian WANG Liang-Yong CHENG Yan WU Liang-Cai YAO Dong-Ning SONG Zhi-Tang FENG Song-Lin; Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906004,60906003,61006087,61076121);the Science and Technology Council of Shanghai(1052nm07000).; The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented.It is found that the adhesive strength between the Ge_(2)Sb_(2)Te_(5)(GST)layer and the layer below ...; 关键词：STRENGTH LAYER THICK

Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a-GaN Films Grown on r-Plane Sapphire Substrates by MOCVD: 《Chinese Physics Letters》2012年第8期253-256,共4页TIAN Yu DAI Jiang-Nan XIONG Hui ZHENG Guang RYU My FANG Yan-Yan CHEN Chang-Qing; Supported by the National Natural Science Foundation of China under Grant No 60976042;the Major Program of National Natural Science Foundation of China under Grant No 10990100;the National Basic Research Program of China under Grant Nos 2010CB923204 and 2012CB619302。; We investigate the effects of the V/III ratio of a low-temperature GaN buffer layer on the growth of the overlaying nonpolar-plane GaN film grown on-plane sapphire by metal-organic chemical-vapor deposition(MOCVD).Wit...; 关键词：MOCVD SAPPHIRE film

Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer: 《Chinese Physics Letters》2011年第7期323-326,共4页PAN Feng QIAN Xian-Rui HUANG Li-Zhen WANG Hai-Bo YAN Dong-Hang; by the National Natural Science Foundation of China(50803063);The National Basic Research Program of China(2009CB939702).; High-mobility vanadyl phthalocyanine(VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene(F2-P4T)thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine(F16CuPc)/copper p...; 关键词：HETEROJUNCTION temperature MOBILITY

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