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DEPENDENCE: 作品数：887被引量：964H指数：10; 导出分析报告; 相关领域：理学更多>>; 相关作者：黄矛由振东万兴旺李万亥黄维通更多>>; 相关机构：清华大学中国科学技术大学北京大学第二军医大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金中国博士后科学基金更多>>

Adaptive Graph Convolutional Recurrent Neural Networks for System-Level Mobile Traffic Forecasting: 《China Communications》2023年第10期200-211,共12页Yi Zhang Min Zhang Yihan Gui Yu Wang Hong Zhu Wenbin Chen Danshi Wang; supported by the National Natural Science Foundation of China(61975020,62171053)。; Accurate traffic pattern prediction in largescale networks is of great importance for intelligent system management and automatic resource allocation.System-level mobile traffic forecasting has significant challenges ...; 关键词：adaptive graph convolutional network mobile traffic prediction spatial-temporal dependence

Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process: 《Chinese Physics B》2023年第9期522-529,共8页李逸帆倪涛李晓静王娟娟高林春卜建辉李多力蔡小五许立达李雪勤王润坚曾传滨李博赵发展罗家俊韩郑生; Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response an...; 关键词：self-heating effect(SHE) silicon-on-insulator(SOI)MOSFETs thermal transient response WORKLOAD

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms: 《Chinese Physics B》2023年第6期454-458,共5页唐莹刘俊坤于子皓孙李刚朱林利; Project supported by the National Natural Science Foundation of China(Grant Nos.11772294 and 11621062);the Fundamental Research Funds for the Central Universities(Grant No.2017QNA4031)。; The thermal conductivity of GaN nanofilm is simulated by using the molecular dynamics(MD)method to explore the influence of the nanofilm thickness and the pre-strain field under different temperatures.It is demonstrat...; 关键词：molecular dynamics simulation GaN nanofilm thermal conductivity phonon properties size effect strain effect

Phase dependence of third-order harmonic generation in gases induced by two-color laser field: 《Chinese Optics Letters》2023年第5期1-5,共5页孟从森宋盼吕治辉王小伟张栋文赵增秀袁建民; supported by the National Key Research and Development Program of China(No.2019YFA0307704);the National Natural Science Foundation of China(Nos.11974425 and 11974426);the National Safety Academic Fund(No.U1830206)。; We experimentally demonstrate third-harmonic generation(THG)in gases ionized by a femtosecond laser pulse superimposed on its second-harmonic(SH).The mechanism of THG has been investigated,and it demonstrates that a t...; 关键词：third-harmonic generation THZ

Body Bias Dependence of Bias Temperature Instability(BTI)in Bulk FinFET Technology: 《Energy & Environmental Materials》2022年第4期1200-1203,共4页Jiayang Zhang Zirui Wang Runsheng Wang Zixuan Sun Ru Huang; supported by NSFC(61874005,61927901);the 111 Project(B18001).; In this article,the body bias dependence of the bias temperature instability(BTI)in bulk FinFETs is experimentally studied,under different test conditions for the first time.In contrast to the traditional understandin...; 关键词：bias temperature instability(BTI) body effect FINFET RELIABILITY

Parametric dependence of collisional heating of highly magnetized over-dense plasma by(far-)infrared lasers: 《High Power Laser Science and Engineering》2022年第4期7-13,共7页K.Li W.Yu; the Start-up fund from Shantou University(No.NTF21003);the Science and Technology Fund of Guangdong Province(No.STKJ2021018);the National Natural Science Foundation of China(NSFC)(No.12075317).; Heating of over-dense plasma represents a long-standing quest in laser-plasma physics.When the strength of the magnetic field is above the critical value,a right-handed circularly polarized laser could propagate into ...; 关键词：highly magnetized plasma over-dense plasma collisional heating parametric dependence

Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence: 《Science China(Information Sciences)》2022年第8期291-292,共2页Jingyi LIU Xia AN Gensong LI Zhexuan REN Ming LI Xing ZHANG Ru HUANG; supported by National Natural Science Foundation of China (Grant Nos. 61421005, 61927901, 61434007);111 Project (Grant No. B18001)。; Dear editor,Germanium(Ge) has been considered as a promising candidate of channel material for sub-7 nm owing to its high carrier mobility and good compatibility with conventional Si CMOS process [1]. Although Ge-base...; 关键词：meaningful EDITOR MASSIVE

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices: 《Chinese Physics B》2022年第1期529-534,共6页Ren-Ren Xu Qing-Zhu Zhang Long-Da Zhou Hong Yang Tian-Yang Gai Hua-Xiang Yin Wen-Wu Wang; the Science and Technology Program of Beijing Municipal Science and Technology Commission,China(Grant No.Z201100004220001);the National Major Project of Science and Technology of China(Grant No.2017ZX02315001);the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences(Grant Nos.Y9YS05X002 and E0YS01X001).; A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking fro...; 关键词：bias temperature instability(BTI) channel length stress FINFET

External focusing dependence of spatial distribution of air lasers during femtosecond laser filamentation in air被引量：3: 《Chinese Optics Letters》2021年第8期18-22,共5页Jiayun Xue Hui Gao Nan Zhang Lu Sun Lie Lin Weiwei Liu; supported by the National Key R&D Program of China (No.2018YFB0504400)。; The spatial distribution of the forward-propagating amplified spontaneous emission(ASE) of nitrogen molecular ions during femtosecond laser filamentation in air is studied via numerical simulations. The results sugges...; 关键词：air laser amplified spontaneous emission femtosecond laser filamentation

Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET被引量：1: 《Science China(Information Sciences)》2021年第2期267-268,共2页Zhexuan REN Xia AN Gensong LI Xing ZHANG Ru HUANG; supported in part by National Natural Science Foundation of China(Grant Nos.61421005,61434007);111 Project(Grant No.B18001)。; Dear editor,Strain technology has become a common solution in the semiconductor manufacturing industry since 90-nm technology node to overcome the severe carrier mobility degradation of nanoscale microelectronic devic...; 关键词：PMOSFET Layout OVERCOME

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