DMS

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Controlling magnetism in 2D CrI3 by electrostatic doping
《Journal of Semiconductors》2019年第8期2-2,共1页Zheng Han 
Spin ordering in a semiconductor has attracted much attention in the community of condensed matter physics. By combining ferromagnetism and the semiconducting nature, systems such as Mn-doped PbSnTe or InAs were found...
关键词：Controlling MAGNETISM 2D CrI3 ELECTROSTATIC DOPING DILUTED magnetic SEMICONDUCTOR (DMS) 
Enhanced room temperature ferromagnetism in Cr-doped ZnO nanoparticles prepared by auto-combustion method
《Journal of Semiconductors》2018年第4期20-27,共8页Khizar-ul Haq M.Irfan Muhammad Masood Murtaza Saleem Tahir Iqbal Ishaq Ahmad M.A.Khan M.Zaffar Muhammad Irfan 
Project supported by the Office of Research,Innovation,and Commercialization(ORIC),MUST Mirpur(AJK)
Zn1-xCrxO （x = 0.00, 0.01, 0.03, 0.05, 0.07, and 0.09） nanoparticles were synthesized, by an auto-com- bustion method. Structural, optical, and magnetic characteristics of Cr-doped ZnO samples calcined at 600 ℃ hav...
关键词：Cr-doped ZnO AUTO-COMBUSTION DMS FERROMAGNETISM 
Structural and magnetic properties of Yb-implanted GaN
《Journal of Semiconductors》2013年第5期16-19,共4页尹春海 刘超 陶东言 曾一平 
supported by the National Natural Science Foundation of China(No.60876004)
N-type, p-type and unintentionally-doped GaN were implanted with Yb ions by double energy ion im- plantation and the samples were annealed at 900 ℃. The structural and magnetic properties of the samples have been stu...
关键词：diluted magnetic semiconductors （DMS） room temperature ferromagnetism ion implantation magnetic anisotropy 
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
《Journal of Semiconductors》2012年第7期16-19,共4页陶志阔 张荣 修向前 崔旭高 李丽 李鑫 谢自力 郑有炓 郑荣坤 Simon P Ringer 
supported by the Special Funds for Major State Basic Research Project,China(No.2011CB301900);the Hi-Tech Research Project,China(No.2009AA03A198);the National Natural Science Foundation of China(Nos.60990311,60820106003,608201060,60906025,60936004,61106009);the Natural Science Foundation of Jiangsu Province,China(Nos.BK2008019,K2009255,BK2010178, BK2010385);the Research Funds from NJU-Yangzhou Institute of Opto-Electronics
We have grown transition metal （Fe, Mn） doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion con-...
关键词：MOCVD DMS high-resolution TEM 
Preparation of (SiFe) C DMS Based 4H-SiC Substrate
《Journal of Semiconductors》2008年第8期1436-1440,共5页姜岩峰 王建平 
北京市属市管高校拔尖创新人才计划;北京市科技新星计划(批准号:2005B01)资助项目~~
A diluted magnetic 4H-SiC has been prepared by implanting Fe ions into the substrate. Its Curie temperature reaches as high as 320K and its technology is compatible with current IC. Moreover, the process includes thre...
关键词：SPINTRONICS diluted magnetic semiconductor ANNEALING Curie temperature 
高温高压合成Co掺杂ZnO基DMS及其磁性特征
《Journal of Semiconductors》2008年第6期1156-1159,共4页张国煜 修向前 张荣 陶志阔 崔旭高 张佳辰 谢自力 徐小农 郑有炓 
国家重点基础研究发展规划(批准号:2006CB604907);国家高技术研究发展计划(批准号:2006AA03A142;2006AA03Z411);国家自然科学基金(批准号:60731160628;60776001)资助项目~~
采用高温高压方法将由溶胶-凝胶(Sol-gel)法制备的Co掺杂ZnO基稀磁半导体纳米颗粒置于6GPa压强和1000℃环境中处理,并研究其结构和磁学性质.XRD,XPS以及HRTEM等结构测量和分析表明,在掺杂浓度不高时,Co2+离子被较好地掺杂到了ZnO晶格中...
关键词：高温高压 ZNO稀磁半导体 CO掺杂 
Nephelauxetic-Effect in DMS Zn_(1-x)Co_xSe and Effect of Pressure on Nephelauxetic-Effect
《Journal of Semiconductors》2002年第12期1233-1237,共5页欧阳楚英 雷敏生 
江西师范大学校管课题资助项目 (No.0 2 10 0 7)~~
Based on the 3D electron's radial wave function of Co 2+ free ion,a Nephelauxetic effect modifying factor to modify the radial wave function is introduced when Co 2+ cations are put into the crystal field o...
关键词：diluted magnetic semiconductors Nephelauxetic  effect radial wave functions high  pressure effect 
新型稀磁半导体Cd_(1-x)Mn_xIn_2Te_4的光学和磁学性能被引量：2
《Journal of Semiconductors》2002年第10期1057-1061,共5页安卫军 常永勤 郭喜平 介万奇 
国家自然科学基金 (批准号 :5 9872 0 2 7);航空科学基金 (批准号 :98G5 30 99)资助项目~~
采用垂直Bridgman法制备出了x =0 1、0 2 2和 0 4的Cd1-xMnxIn2 Te4 晶体 .采用红外透射光谱法研究了晶体的红外光学特性 .用超导量子磁强计测量了样品在温度范围 5～ 30 0K和磁场强度范围 0～ 5T内的磁化强度 .在中红外波段透过率...
关键词：稀磁半导体 Cd1-xMnxIn2Te4 红外透过度 磁化率 反铁磁交换作用 DMS 
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