云南高校图书馆联盟文献共享服务平台- FORWARD

FORWARD: 作品数：1050被引量：966H指数：12; 导出分析报告; 相关领域：经济管理更多>>; 相关作者：吕征宇金勇张建龙殷长春丁旭更多>>; 相关机构：浙江大学长江大学吉林大学中国石油大学（华东）更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

A leap forward in compute-in-memory system for neural network inference: 《Journal of Semiconductors》2025年第4期5-7,共3页Liang Chu Wenjun Li; Developing efficient neural network(NN)computing systems is crucial in the era of artificial intelligence(AI).Traditional von Neumann architectures have both the issues of"memory wall"and"power wall",limiting the data...; 关键词：neural network von neumann architectures compute memory INFERENCE MEMRISTOR artificial intelligence ai traditional memristor crossbarsare analogue cim

Forward stagewise regression with multilevel memristor for sparse coding: 《Journal of Semiconductors》2023年第10期105-113,共9页Chenxu Wu Yibai Xue Han Bao Ling Yang Jiancong Li Jing Tian Shengguang Ren Yi Li Xiangshui Miao; This work was supported by the National Key R&D Program of China(Grant No.2019YFB2205100);in part by Hubei Key Laboratory of Advanced Memories.; Sparse coding is a prevalent method for image inpainting and feature extraction,which can repair corrupted images or improve data processing efficiency,and has numerous applications in computer vision and signal proce...; 关键词：forward stagewise regression in-memory computing MEMRISTOR sparse coding

A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance: 《Journal of Semiconductors》2023年第5期53-61,共9页Moufu Kong Zewei Hu Ronghe Yan Bo Yi Bingke Zhang Hongqiang Yang; supported in part by the National Natural Science Foundation of China(Grant No.61974015);Key R&D Project of Science and Technology Plan of the Sichuan province(Grant No.2021YFG0139);the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201806)。; A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S...; 关键词：SIC MOSFET specific on-resistance breakdown voltage HIGH-K SUPERJUNCTION switching performance reverse recovery characteristic

Progress in integrating Ⅲ–Ⅴ semiconductors on silicon could drive silicon photonics forward被引量：1: 《Journal of Semiconductors》2019年第10期2-3,共2页Xinlun Cai; Why integratingⅢ–Ⅴsemiconductor on silicon Photonics is an enabling technology and play a significant role in today’s information age.In the last few decades,starting from the fiber long haul optical communication...; 关键词：FORWARD optical its I/O is

A 0.5 V divider-by-2 design with optimization methods for wireless sensor networks: 《Journal of Semiconductors》2013年第5期115-120,共6页王利丹李智群; supported by the National High Technology Research and Development Program of China(No.2007AA01Z2A7);the Special Fund of Jiangsu Province for the Transformation of Scientific and Technological Achievements(No.BA2010073); A 0.5 V static master-slave D flip-flop （DFF） divider-by-2 is implemented with a 0.13 μm 1P8M RF- mixed signal CMOS process. Low-threshold transistors in a deep-N well with forward-body bias technology are used in ...; 关键词：low-threshold transistors deep-N well forward-body bias low voltage

Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs被引量：2: 《Journal of Semiconductors》2013年第2期37-40,共4页陈万军张竞张波陈敬; Project supported by the National Natural Science Foundation of China(No.60906037);the Research Fund for the Doctoral Program of Higher Education of China(No.20090185120021); The gate forward leakage current in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate f...; 关键词：fluorine-plasma surface treatment AlGaN/GaN HEMTs leakage current

Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias: 《Journal of Semiconductors》2012年第6期47-50,共4页肖文波何兴道高益庆张志敏刘江涛; supported by the National Natural Science Foundation of China(Nos.10904059,4106600 l,61072131,61177096);the Aeronautical Science Foundation of China(No.2010ZB56004);the Scientific Research Foundation of Jiangxi Provincial Department of Education(No. GJJ11176);the Open Fund of the Key Laboratory of Nondestructive Testing of Ministry of Education,Nanchang Hangkong University (No.ZD201029005);the Natural Science Foundation of Jiangxi Province,China(Nos.2009GQW0017,2009GZW0024);the Graduate Innovation Base of Jiangxi Province,China; The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions.An electroluminescence viewgraph shows the clear devi...; 关键词：triple-junction solar cell electroluminescence characteristics

A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement: 《Journal of Semiconductors》2011年第7期38-41,共4页陈文锁张波方健李肇基; Project supported by the National Natural Science Foundation of China(Nos.61076082,60876053); A new lateral insulated-gate bipolar transistor with a controlled anode（CA-LIGBT） on silicon-on-insulator （SOI） substrate is reported.Benefiting from both the enhanced conductivity modulation effect and the high r...; 关键词：controlled anode turn-off time forward drop power IC

Forward gated-diode method for parameter extraction of MOSFETs: 《Journal of Semiconductors》2011年第2期23-27,共5页张辰飞马晨月郭昕婕张秀芳何进王国增杨张刘志伟; Project supported by the Key Project of the National Natural Science Foundation of China(No.60936005);the Shenzhen Science & Technology Foundation,China(No.JSA200903160146A);the Industry,Education and Academy Cooperation Program of Guangdong Province,China(No.2009B090300318);the Fundamental Research Project of Shenzhen Science & Technology Foundation,China (No.JC200903160353A); The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thic...; 关键词：forward gated-diode method recombination-generation current parameter extraction MOSFETS

Insulated gate bipolar transistor with trench gate structure of accumulation channel: 《Journal of Semiconductors》2010年第3期41-44,共4页钱梦亮李泽宏张波李肇基; An accumulation channel trench gate insulated gate bipolar transistor （ACT-IGBT） is proposed. The simu- lation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 an...; 关键词：ACT-IGBT CT-IGBT on-state voltage drop forward blocking voltage FBSOA

FORWARD