云南高校图书馆联盟文献共享服务平台- MBE

MBE: 作品数：367被引量：417H指数：8; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：曾一平丁召孔梅影何力李晋闽更多>>; 相关机构：中国科学院贵州大学清华大学华北光电技术研究所更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划博士科研启动基金贵州省科学技术基金更多>>

Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition: 《Chinese Physics B》2024年第12期376-381,共6页Siqi Li Pengfei Shao Xiao Liang Songlin Chen Zhenhua Li Xujun Su Tao Tao Zili Xie Bin Liu M.Ajmal Khan Li Wang T.T.Lin Hideki Hirayama Rong Zhang Ke Wang; Project supported by the National Key R&D Program of China(Grant No.2022YFB3605600);the National Natural Science Foundation of China(Grant No.61974065);the Key R&D Project of Jiangsu Province,China(Grant Nos.BE2020004-3 and BE2021026);Postdoctoral Fellowship Program of CPSF(Grant No.GZC20231098);the Jiangsu Special Professorship;Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics。; We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in...; 关键词：ALGAN superlattices(SLs) molecular beam epitaxy(MBE)

High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers: 《Chinese Physics B》2023年第9期510-513,共4页苏向斌邵福会郝慧明刘汗青李叔伦戴德炎尚向军王天放张宇杨成奥徐应强倪海桥丁颖牛智川; the Science and Technology Program of Guangzhou(Grant No.202103030001);the KeyArea Research and Development Program of Guangdong Province(Grant No.2018B030329001);the National Natural Science Foundation of China(Grant Nos.62035017,61505196,and 62204238);the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032);the Major Program of the National Natural Science Foundation of China(Grant Nos.61790580 and 61790581);the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project(Grant No.21SH06);Jincheng Key Research and Development Project(Grant No.20210209);the Key R&D Program of Shanxi Province(Grant No.202102030201004);the R&D Program of Guangdong Province(Grant Nos.2018B030329001 and2020B0303020001);Shenzhen Technology Research Project(Grant No.JSGG20201102145200001);the National Key Technologies R&D Program of China(Grant No.2018YFA0306100)。; Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the...; 关键词：InAs/GaAs quantum dots high-operating-temperature laser molecular beam epitaxy(MBE)

Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties被引量：1: 《Chinese Physics B》2022年第1期618-625,共8页Zhen-Hua Li Peng-Fei Shao Gen-Jun Shi Yao-Zheng Wu Zheng-Peng Wang Si-Qi Li Dong-Qi Zhang Tao Tao Qing-Jun Xu Zi-Li Xie Jian-Dong Ye Dun-Jun Chen Bin Liu Ke Wang You-Dou Zheng Rong Zhang; the National Natural Science Foundation of China(Grant Nos.62074077,61921005,61974062,and 61974065);the Fundamental Research Funds for the Central Universities,China(Grant No.14380166);Key R&D Program of Jiangsu Province,China(Grant No.BE2020004-3);the National Key R&D Program of China(Grant No.2017YFB0404101);Nature Science Foundation of Jiangsu Province,China(Grant No.BE2015111);Collaborative Innovation Center of Solid State Lighting and Energysaving Electronics.; A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantu...; 关键词：GAN molecular beam epitaxy(MBE) low growth rate growth diagram

Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers被引量：1: 《Chinese Physics B》2021年第2期573-577,共5页Yong Li Xiao-Ming Li Rui-Ting Hao Jie Guo Yu Zhuang Su-Ning Cui Guo-Shuai Wei Xiao-Le Ma Guo-Wei Wang Ying-Qiang Xu Zhi-Chuan Niu Yao Wang; Project supported by the National Natural Science Foundation of China(Grant Nos.61774130,11474248,61790581,and 51973070);the Ph.D.Program Foundation of the Ministry of Education of China(Grant No.20105303120002);the National Key Technology Research and Development Program of China(Grant No.2018YFA0209101)。; A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate a...; 关键词：compound buffers AlInSb/GaSb defect inhibition INSB molecular beam epitaxy(MBE)

Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE: 《Chinese Physics B》2020年第10期479-483,共5页Shan Li Jun Lu Si-Wei Mao Da-Hai Wei Jian-Hua Zhao; Project supported by the National Program on Key Basic Research Project,China(Grant No.2018YFB0407601);the Key Research Project of Frontier Science of the Chinese Academy of Sciences(Grant Nos.QYZDY-SSW-JSC015 and XDPB12);the National Natural Science Foundation of China(Grant Nos.11874349 and 11774339)。; A synthetic antiferromagnet based on a thin antiferromagnetically coupled Co2MnSi/MnGa bilayer with Pt capping is proposed in this work. Square magnetic loops measured by anomalous Hall effect reveal that a well perpe...; 关键词：exchange coupling magnetization compensation anomalous Hall effect molecular-beam epitaxy

Electronic structure of molecular beam epitaxy grown 1T’-MoTe2 film and strain effect: 《Chinese Physics B》2019年第10期210-214,共5页Xue Zhou Zeyu Jiang Kenan Zhang Wei Yao Mingzhe Yan Hongyun Zhang Wenhui Duan Shuyun Zhou; Project supported by the National Basic Research Program of China(Grant Nos.2016YFA0301004 and 2015CB921001);the National Natural Science Foundation of China(Grant Nos.11334006,11725418,and 11674188); Atomically thin transition metal dichalcogenide films with distorted trigonal(1T') phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T' film and experimental investigation o...; 关键词：quantum spin HALL effect 1T'-MoTe2 molecular beam epitaxy(MBE) transition metal dichalcogenides(TMDCs)

A review on MBE-grown HgCdSe infrared materials on GaSb(211)B substrates被引量：2: 《Chinese Physics B》2019年第1期116-125,共10页Z K Zhang W W Pan J L Liu W Lei; Project supported by the Australian Research Council(Grant Nos.FT130101708,DP170104562,LP170100088,and LE170100233);Universities AustraliaDAAD German Research Cooperation Scheme(Grant No.2014-2015);supported by the WA node of Australian National Fabrication Facility(ANFF); We review our recent efforts on developing HgCdSe infrared materials on Ga Sb substrates via molecular beam epitaxy(MBE) for fabricating next generation infrared detectors with features of lower production cost and la...; 关键词：INFRARED DETECTOR HgCdSe GASB molecular beam EPITAXY

1.3-μm InAs/GaAs quantum dots grown on Si substrates: 《Chinese Physics B》2018年第12期526-531,共6页Fu-Hui Shao Yi Zhang Xiang-Bin Su Sheng-Wen Xie Jin-Ming Shang Yun-Hao Zhao Chen-Yuan Cai Ren-Chao Che Ying-Qiang Xu Hai-Qiao Ni Zhi-Chuan Niu; Project supported by the National Key Research and Development Program of China(Grant No.2018YFA0306101);the Scientific Instrument Developing Project of Chinese Academy of Sciences(Grant No.YJKYYQ20170032);the National Natural Science Foundation of China(Grant Nos.61790581,61435012,and 61505196); We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in ...; 关键词：quantum dots dislocation filter molecular beam epitaxy(MBE) silicon photonics

Studies on the nucleation of MBE grown Ⅲ-nitride nanowires on Si: 《Chinese Physics B》2017年第1期344-347,共4页Yanxiong E Zhibiao Hao Jiadong Yu Chao Wu Lai Wang Bing Xiong Jian Wang Yanjun Han Changzheng Sun Yi Luo; supported by the National Basic Research Program of China(Grant No.2013CB632804);the National Natural Science Foundation of China(Grant Nos.61176015,61176059,61210014,61321004,and 61307024);the High Technology Research and Development Program of China(Grant No.2012AA050601); GaN and AlN nanowires（NWs） have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy...; 关键词：GaN nanowires AlN nanowires STRAIN NUCLEATION

Characterization of vertical Au/β-Ga_2O_3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer被引量：1: 《Chinese Physics B》2016年第1期757-761,共5页刘兴钊岳超夏长泰张万里; supported by the National Nature Science Foundation of China(Grant No.61223002);the Science and Technology Commission of Shanghai Municipality,China(Grant No.13111103700);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.2012018530003); High-resistivity β-Ga203 thin films were grown on Si-doped n-type conductive β-Ga203 single crystals by molecular beam epitaxy （MBE）. Vertical-type Schottky diodes were fabricated, and the electrical properties of...; 关键词：gallium oxides thin films Schottky diode ultraviolet photodetector

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