云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2007CB307004)

国家重点基础研究发展计划(2007CB307004): 作品数：11被引量：16H指数：2; 导出分析报告; 相关作者：张国义陈志忠胡晓东李睿杨志坚更多>>; 相关机构：北京大学中国科学院更多>>; 相关期刊：《Journal of Semiconductors》《Frontiers of Optoelectronics》《Chinese Physics B》《Chinese Optics Letters》更多>>; 相关主题：GANA-PLANE串联电阻GAN基LED电流扩展更多>>; 相关领域：电子电信理学自动化与计算机技术化学工程更多>>

Spontaneous emission rate enhancement of nano-structured silicon by surface plasmon polariton被引量：1: 《Frontiers of Optoelectronics》2012年第1期51-62,共12页Xue FENG Fang LIU Yidong HUANG; Acknowledgements This work was supported by the National Basic Research Program of China （No. 2011CBA00600 and 2007CB307004） and the National Natural Science Foundation of China （Grant Nos. 60877023, 61036010, 61036011, and 61107050）. The authors would like to thank Xuan Tang, Weiwei Ke, Wei Zhang and Jiangde Peng for their valuable discussions and helpful comments.; Surface plasmon polariton （SPP） is an attractive candidate to improve internal quantum efficiency （QE） of spontaneous emission （SE） from nano-structured silicon （Si） including nano-porous silicon （NP-Si） and...; 关键词：spontaneous emission （SE） silicon nanocrys-tal （Si-NC） surface plasmon polariton （SPP） Purcell effect

Simulation of 60-GHz microwave photonic filters based on serially coupled silicon microring resonators: 《Chinese Optics Letters》2012年第2期40-43,共4页张登科冯雪黄翊东; supported by the National "973" Program of China(No.2007CB307004);the National Natural Science Foundation of China(No.60877023);the Project of National Information Control Laboratory; The microwave photonic filters （MPFs） based on serially coupled silicon microring resonators （MRRs） are theoretically analyzed for the application of 60-GHz millimeter wave wireless personal area networks. This is...; 关键词：Optical resonators

Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy被引量：2: 《Chinese Physics B》2011年第9期439-444,共6页杜彦浩吴洁君罗伟科 John Goldsmith 韩彤陶岳彬杨志坚于彤军张国义; Project supported by the National Basic Research Program of China (Grant No.2007CB307004);the National High Technology Research and Development Program of China (Grant No.2009AA03A198);the National Natural Science Foundation of China (Grant Nos.60776041 61076012,60876063,and 60676032);the Science and Technology Fund of Beijing,China (Grant No.Z101103050410003); Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, pho...; 关键词：GAN hydride vapour phase epitaxy HETEROEPITAXY

Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition: 《Chinese Physics B》2011年第1期639-642,共4页方浩龙浩桑立雯齐胜利熊畅于彤军杨志坚张国义; Project supported by the National Natural Science Foundation of China(Grant Nos.60676032,60776041,60976009 and U0834001);the National Basic Research program of China(Grant No.2007CB307004); We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the c...; 关键词：metal-organic chemical deposition III-NITRIDES NONPOLAR light emitting diodes

Modeling of silicon-nanocrystal formation in amorphous silicon/silicon dioxide multilayer structure: 《Chinese Optics Letters》2010年第12期1199-1202,共4页陈可勇冯雪黄翊东; supported by the National Natural Science Foundation of China (No.60877023);the National "973" Program of China (No.2007CB307004); The formation process of silicon-nanocrystals （Si-NCs） in the amorphous silicon/silicon dioxide （a-Si/SiO2） multilayer structure during thermal annealing is theoretically studied with a modified model based on the...; 关键词：Crystal growth Free energy MULTILAYERS NANOCLUSTERS NANOCRYSTALS

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films: 《Chinese Physics B》2010年第1期520-523,共4页赵璐冰于彤军吴洁君杨志坚张国义; Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018); Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...; 关键词：non-polar GaN V/III ratio ANISOTROPY migration length

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN: 《Journal of Semiconductors》2008年第8期1475-1478,共4页张晓敏王彦杰杨子文廖辉陈伟华李丁李睿杨志坚张国义胡晓东; 国家高技术研究发展计划(批准号:2007AA03Z403);国家重点基础研究发展计划(批准号:2007CB307004);国家基础研究计划(批准号:2006CB604908,2006CB921607);国家自然科学基金(批准号:60477011,60776042)资助项目~~; p-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through opti- mization of the magnesium flow rate. The hole concentration first increased and then decreased with the magnesium...; 关键词：P-GAN self-compensations magnesium doping MOCVD

InGaN蓝光与CdTe纳米晶基白光LED被引量：3: 《发光学报》2008年第6期1071-1075,共5页易觉民李红博唐芳琼宋振阳杨志坚张国义; 国家自然科学基金(60577030,60776041);国家自然科学基金重点(60736001);国家重大基础研究“973”计划(2007CB307004)资助项目; 报道了倒装焊InGaN蓝光LED与黄光CdTe纳米晶的复合结构。利用蓝光作为CdTe纳米晶的激发源,通过光的下转换机制,将部分蓝光转化为黄光,复合发射出白光。室温下正向驱动电流为10mA时,发光色品坐标为x=0.29,y=0.30。实验表明,该复合结构白...; 关键词：氮化镓白光发光二极管碲化镉纳米晶纳米荧光粉

圆锥反光面与抛物面反光面组成的边发射型LED及其在LCD背光源中的应用被引量：2: 《液晶与显示》2008年第4期458-463,共6页易业文陈志忠于彤军秦志新何仲恺张国义; 国家自然科学基金资助项目(No60577030;No60776041);国家"973"计划资助项目(No2007CB307004); 设计了一种边发射型的白光LED封装结构,通过全反射和反光镜的反射使LED发出的光由两侧出射,并且可以通过调节锥形反光镜的锥顶角来控制光强角分布中峰值的位置。利用光路追迹软件对所设计的结构进行模拟,并将所设计的边发射型LED用于直...; 关键词：白光LED边发射直下式均匀性导光板

Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode: 《Chinese Physics B》2008年第4期1274-1279,共6页靳晓民章蓓代涛张国义; Project supported by the Wang Faculty Fellowship at Peking University,Beijing,China,2006-2007 through California State University (CSU) International Programs USA;the National Basic Research Program of China (Grant No 2007CB307004);the National High Technology Research and Development Program of China (Grant No 2006AA03A113);the National Natural Science Foundation of China (Grant Nos 60276034,60577030 and 60607003); We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride （GaN） laser diodes （LDs） theoretically. For the particular LD structure, composed of approximate 4 μm t...; 关键词：GaN laser optical mode coupling optical confinement factor

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