国家自然科学基金(60806024)

作品数：8被引量：4H指数：1
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相关作者：董军荣杨浩田超黄杰张海英更多>>
相关机构：中国科学院微电子研究所更多>>
相关期刊：《电子器件》《Chinese Physics B》《Journal of Semiconductors》更多>>
相关主题：PLANARGAASSCHOTTKYBROADBANDINP更多>>
相关领域：电子电信生物学更多>>
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A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications
《Chinese Physics B》2012年第6期462-467,共6页董军荣 杨浩 田超 黄杰 张海英 
Project supported by the National Scientific Major Projects of China (Grant No. 2011ZX03004-001-02);the National Natural Science Foundation of China (Grant No. 60806024)
The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high...
关键词：GAAS planar Schottky varactor diode left-handed nonlinear transmission lines fre-quency doubler 
A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines
《Journal of Semiconductors》2011年第9期89-92,共4页董军荣 黄杰 田超 杨浩 张海英 
Project supported by the National Natural Science Foundation of China(No.60806024);the International Collaboration Program of the Ministry of Science and Technology(No.2009DFA12130)
A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A...
关键词：GAAS MMIC technology LH NLTLs frequency doubler 
A k-band broadband monolithic distributed frequency multiplier based on nonlinear transmission line被引量：1
《Chinese Physics B》2011年第6期145-149,共5页黄杰 董军荣 杨浩 张海英 田超 郭天义 
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024);the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2009C020);the Singapore–China Joint Research Project (Grant No. 2009DFA12130)
A fabrication technology of GaAs planar Schottky varactor diode （PSVD） is successfully developed and used to design and manufacture CaAs-based monolithic frequency multiplication based on 23-section nonlinear transm...
关键词：nonlinear transmission line frequency multiplication harmonic generation planar Schottky varactor diode 
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes
《Journal of Semiconductors》2011年第3期49-53,共5页董军荣 黄杰 田超 杨浩 张海英 
Project supported by the National Natural Science Foundation of China(No.60806024)
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external p...
关键词：GAAS PSVDs large-signal model parameter extraction 
一种指数掺杂的砷化镓平面肖特基变容二极管的设计与制作被引量：3
《电子器件》2011年第1期29-32,共4页田超 杨浩 董军荣 黄杰 张海英 
国家自然科学基金资助项目(60806024)
利用标准微电子工艺研制出了一种可以应用于微波倍频电路中的肖特基势垒变容二极管,采用平面结构的制作工艺,克服了传统制作工艺的不易集成的缺点。并且在N型层的掺杂浓度呈指数规律,使变容管的变容比高于传统的均匀掺杂结构,有利于提...
关键词：砷化镓 变容管 指数掺杂 肖特基结 
Design and manufacture of planar GaAs Gunn diode for millimeter wave application
《Chinese Physics B》2010年第12期451-455,共5页黄杰 杨浩 田超 董军荣 张海英 郭天义 
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024);the Fundamental Research Funds for Central University of China (Grant No. XDJK2009C020)
GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of s...
关键词：GAAS planar Gunn diode hot electron injector millimeter generation 
Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAs InP-based HEMT
《Journal of Semiconductors》2010年第9期45-48,共4页黄杰 郭天义 张海英 徐静波 付晓君 杨浩 牛洁斌 
supported by the Young Scientists Fund of the National Natural Science Foundation of China(No.60806024);the Fundamental Research Funds for Central University,China(No.XDJK2009C020)
A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In_（0.53）Ga_（0.47）As/In_（0.52）Al_（0.48）...
关键词：HEMT INP INGAAS/INALAS cutoff frequency T-shaped gate technology 
120-nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48)As InP-based HEMT
《Journal of Semiconductors》2010年第7期46-48,共3页黄杰 郭天义 张海英 徐静波 付晓君 杨浩 牛洁斌 
Project supported by the National Natural Science Foundation of China(No.60806024);the Fundamental Research Funds for the Central Universities,China(No.XDJK2009C020).
120 nm gate-length In_（0.7）Ga_（0.3）As/In_（0.52）Al_（0.48） As InP-based high electron mobility transitions（HEMTs） are fabricated by a new T-shaped gate electron beam lithograph（EBL） technology,which is achie...
关键词：HEMT INP INGAAS/INALAS cutoff frequency T-shaped gate 
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