国家自然科学基金(BK2011010)

作品数：7被引量：2H指数：1
导出分析报告
相关期刊：《Journal of Semiconductors》《Science China(Physics,Mechanics & Astronomy)》《Chinese Physics B》《Chinese Physics Letters》更多>>
相关主题：RATIOINDIUMMASKEFFECTYELLOW更多>>
相关领域：电子电信理学金属学及工艺更多>>
-
在结果中检索

检索结果分析

结果分析中...
共 条 记 录，以下是1-7
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask
《Chinese Physics B》2014年第9期327-330,共4页陶涛 智婷 李民雪 谢自力 张荣 刘斌 李毅 庄喆 张国刚 蒋府龙 陈鹏 郑有炓 
supported by the Special Funds for Major State Basic Research Project of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the Hi-tech Research Project of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,61274003,60936004,and 61176063);the Program for New Century Excellent Talents in University of China(Grant No.NCET-11-0229);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK2011010);the Funds of Key Laboratory of China(Grant No.9140C140102120C14);the Research Funds from NJU-Yangzhou Institute of Opto-electronics of China
A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching （ICP） surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of pho...
关键词：PHOTOELECTROLYSIS InGaN photoelectrode surface roughening hydrogen generation 
GaN nanopillars with a nickel nano-island mask
《Journal of Semiconductors》2013年第12期21-25,共5页林增钦 修向前 张世英 华雪梅 谢自力 张荣 陈鹏 韩平 郑有炓 
Project supported by the Special Funds for Major State Basic Research Project(Nos.2011CB301900,2012CB619304,2010CB327504);the Hi-Tech Research Project(No.2011AA03A103);the National Natural Science Foundation of China(Nos.60990311,61274003,60936004,61176063);the Natural Science Foundation of Jiangsu Province(No.BK2011010)
Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and...
关键词：GaN nanopillars nickel nano-island thermal ammonia etching MASK ICP SEM 
Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer被引量：2
《Science China(Physics,Mechanics & Astronomy)》2013年第9期1694-1698,共5页CHAI XuZhao ZHANG Yun LIU Bin XIE ZiLi HAN Ping YE JianDong HU LiQun XIU XiangQian ZHANG Rong ZHENG YouDou 
supported by the Special Funds for Major State Basic Research Project (Grant Nos.2011CB301900,2012CB619304,and 2012CB619200);the Hi-tech Research Project (Grant No.2011AA03A103);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2011010,BK2010385,BK2009255,and BK2010178);the Program Granted for Scientific Innovation Research of College Graduate in Jiangsu Province (Grant No.CXLX12_0049);the Research Funds from NJU-Yangzhou Institute of Opto-electronics;a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions
Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is ...
关键词：yellow luminescence blue luminescence V/Ⅲ ratio 
Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study
《Chinese Physics B》2013年第1期513-517,共5页周安 修向前 张荣 谢自力 华雪梅 刘斌 韩平 顾书林 施毅 郑有炓 
Project supported by the National Basic Research Program of China (Grant No. 2011CB301900);the National High Technology Research and DevelopmentProgram of China (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, and60936004);the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010, BK2010385, BK2009255, and BK2010178)
To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational ...
关键词：GaN growth computational fluid dynamics molecular dynamics 
In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition
《Chinese Physics Letters》2012年第10期217-220,共4页DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou 
Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman...
关键词：SCATTERING VAPOUR ANISOTROPIC 
The growth and properties of an m-plane InN epilayer on LiAlO_2 (100) by metal-organic chemical vapor deposition
《Science China(Physics,Mechanics & Astronomy)》2012年第7期1249-1252,共4页XIE ZiLi ZHANG Rong FU DeYi LIU Bin XIU XiangQian HUA XueMei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG YouDou 
supported by the Special Funds for the Major State Basic Research Project (Grant No. 2011CB301900);the High-Tech Research Project (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60721063,60906025, 60936004 and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos. BK2011010, BK2009255, BK2010178 andBK2010385);the Research Funds from NJU-Yangzhou Institute of Opto-electronics
The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer ...
关键词：crystal structure X-ray diffraction vapor-phase epitaxy INN semiconducting indium compound 
Raman Scattering Study of In_(x)Ga_(1-x)N Alloys with Low Indium Compositions
《Chinese Physics Letters》2012年第2期211-213,共3页TENG Long ZHANG Rong XIE Zi-Li TAO Tao ZHANG Zhao LI Ye-Cao LIU Bin CHEN Peng HAN Ping ZHENG You-Dou 
Supported by the National Basic Research Program of China(2011CB301900);the Natioanal Hi-Tech Research and Develop-ment Program of China(2011AA03A103);the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004);the Natural Science Foundation of Jiangsu Province(BK2011010,BK2010385,BK2010045,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics,Fok Ying Tong Education Foundation(122028).
In_(x)Ga_(1-x)N alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique.Scanning electron microscopy and x-ray diffraction results sh...
关键词：technique relaxed ALLOYS 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部