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国家自然科学基金(s60976068): 作品数：17被引量：14H指数：3; 导出分析报告; 相关期刊：《Science China(Information Sciences)》《Science China(Physics,Mechanics & Astronomy)》《Chinese Physics B》《Journal of Semiconductors》更多>>; 相关主题：MOSFETSSTRAINED-SIESDTWO-DIMENSIONALTRIGGERING更多>>; 相关领域：电子电信理学自动化与计算机技术化学工程更多>>

A novel ESD power supply clamp circuit with double pull-down paths被引量：4: 《Science China(Information Sciences)》2013年第10期172-179,共8页LIU HongXia YANG ZhaoNian LI Li ZHUO QingQing; supported in part by National Natural Science Foundation of China(Grant Nos.60976068,60936005);Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China Program(Grant No.708083); Electrostatic-discharge （ESD） protection design is one of the key challenges of advanced CMOS processes. RC-triggered and MOSFET-based power supply ESD clamp circuits have been widely used to ob- tain the desired ES...; 关键词：ESD （electrostatic-discharge） clamp circuit DURATION false triggering power supply noise

Evidence of GeO volatilization and its effect on the characteristics of HfO_2 grown on a Ge substrate被引量：2: 《Chinese Physics B》2013年第3期501-504,共4页樊继斌刘红侠费晨曦马飞范晓娇郝跃; Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097);the Cultivation Fund of the Key Scientific and Technical Innovation Project of the Ministry of Education of China (Grant No. 708083); HfO2 films are deposited by atomic layer deposition（ALD） using tetrakis ethylmethylamino hafnium（TEMAH） as the hafnium precursor,while O3 or H2O is used as the oxygen precursor.After annealing at 500℃ in nitrogen...; 关键词：GeO volatilization H2 O-based HfO2 O3-based HfO2 thermal stability

Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition: 《Chinese Physics B》2013年第2期487-491,共5页樊继斌刘红侠马飞卓青青郝跃; Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083); A comparative study of two kinds of oxidants（H2O and O3） with the combinations of two metal precursors [trimethylaluminum（TMA） and tetrakis（ethylmethylamino） hafnium（TEMAH）] for atomic layer deposition（ALD） ...; 关键词：HfAlOx atomic layer deposition OXIDANTS ANNEALING

A novel high performance ESD power clamp circuit with a small area: 《Journal of Semiconductors》2012年第9期124-130,共7页杨兆年刘红侠李立卓青青; supported by the National Natural Science Foundation of China(Nos.60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083); A MOSFET-based electrostatic discharge （ESD） power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. ...; 关键词：electrostatic discharge clamp circuit false triggering turn-off mechanism

Influence of different oxidants on the band alignment of HfO_2 films deposited by atomic layer deposition被引量：1: 《Chinese Physics B》2012年第8期498-502,共5页樊继斌刘红侠高博马飞卓青青郝跃; Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083); Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence ban...; 关键词：HFO2 band alignment ANNEALING X-ray photoelectron spectroscopy DIPOLES

Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k·p theory: 《Chinese Physics B》2011年第12期335-340,共6页匡潜玮刘红侠王树龙秦珊珊王志林; supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 78083); After constructing a stress and strain model, the valence bands of in-plane biaxial tensile strained Si is calculated by k·p method. In the paper we calculate the accurate anisotropy valance bands and the splitting e...; 关键词：biaxial tensile strained Si k · p theory valance band density of state effective mass

Low-power design and application based on CSD optimization for a fixed coefficient multiplier被引量：3: 《Science China(Information Sciences)》2011年第11期2443-2453,共11页LIU HongXia YUAN Bo; supported by the National Natural Science Foundation of China (Grant Nos. 60976068,61076097);the National Defence Advance Research Program (Grant No. 801030401);and the Fundamental Research Funds for the Central Universities (Grant No. 200807010010); This paper presents a low-power design for a fixed coefficient multiplier, based on the canonic signed digit （CSD） method. The proposed technology overcomes the defects of the general CSD method by reducing system p...; 关键词：canonic signed digit optimization coefficient of multiplication system power system area logic cell number FPGA test results

A novel double-trench LVTSCR used in the ESD protection of a RFIC: 《Journal of Semiconductors》2011年第10期53-57,共5页李立刘红侠; Project supported by the National Natural Science Foundation of China(Nos.60976068,61076097);the National Defense Foundation of China(No.413080401); A low-voltage triggering silicon-controlled rectifier（LVTSCR）,for its high efficiency and low parasitic parameters,has many advantages in ESD protection,especially in ultra-deep sub-micron（UDSM） IC and high freque...; 关键词：UDSM LVTSCR RFIC ESD design window

Characterization analysis of UDSM LVTSCR under TLP stress: 《Journal of Semiconductors》2011年第5期42-47,共6页李立刘红侠董翠周文; Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083).; The characteristics of a low-voltage triggering silicon-controlled rectifier （LVTSCR） under a transmission line pulse （TLP） and the characteristics of high frequency are analyzed. The research results show that th...; 关键词：ultra-deep sub-micron electrostatic discharge transmission line pulse low-voltage triggering silieoncontrolled rectifier

A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs: 《Journal of Semiconductors》2011年第4期70-76,共7页李劲刘红侠袁博曹磊李斌; Project supported by the National Natural Science Foundation of China(Nos60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No708083);the Specialized Research Fund for the Doctoral Program of Higher Education(No200807010010); On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a thresho...; 关键词：dual material gate double-gate MOSFET STRAINED-SI short-channel effect the drain-induced barrier-lowering

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