supported by National Natural Science Foundation of China(No.11175024);Beijing Natural Science Foundation(No.1112012);2011BAD24B01;KM 201110015008;KM 201010015005;BIGC Key Project(No.23190113051);PHR20110516;PHR201107145;Fujian Provincial Department of Science and Technology Key Project of China(No.2012H0008)
In this paper, we report silicon oxide coatings deposited by plasma enhanced chem- ical vapor deposition technology (PECVD) on 125 pm polyethyleneterephthalate (PET) surfaces for the purpose of the shelf lifetime ...
supported by National Natural Science Foundation of China(No.11175024);Scientific Research Common Program of Beijing Municipal Education Commission of China(Nos.KM201110015008,KM201310015006)
This work reports the experimental results on the characteristics of radio frequency dielectric barrier N2/Ar discharges. Depending on the nitrogen content in the feed gas and the input power, the discharge can operat...
supported by National Natural Science Foundation of China(No.11175024);the Beijing Natural Science Foundation(No.1112012);Science and Technology on Surface Engineering Laboratory;the Beijing Education Committee(No.BM201002),2011BAD24B01,KM201110015008,KM201010015005 and PHR20110516
Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance (ECR) plasma-assisted atomic layer depositi...
Project supported by the National Natural Science Foundation of China (Grant No. 11175024);the Beijing Natural Science Foundation, China (Grant No. 1112012);the Science and Technology on Surface Engineering Laboratory;the Beijing Education Committee, China (Grant Nos. BM201002, 2011BAD24B01, KM201110015008, KM201010015005, and PHR20110516)
Metal aluminum (A1) thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the ...
supported by National Natural Science Foundation of China (No.11175024);Beijing Natural Science Foundation (No.1112012),2011BAD24B01;Scientific Research Common Program of Beijing Municipal Commission of Education(KM201110015008,KM201010015005);Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under theJurisdiction of Beijing Municipality (PHR20110516)
Atomic layer deposition (ALD) technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the grow...