supported by the National Natural Science Foundation of China (Grant Nos. 60836004 and 60906014);Hunan Provincial Innovation Foundation For Postgraduate (Grant No. CX2011B026)
A novel layout has been proposed to reduce the single event upset(SEU) vulnerability of SRAM cells.Extensive 3-D technology computer-aided design(TCAD) simulation analyses show that the proposed layout can recover the...
Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004);the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014)
In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltag...
Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No. 2009ZX01034-001-001-006);the National Natural Science Foundation of China(No.60906014)
We propose a hierarchical interconnection network with two-phase bufferless resonant clock distribution, which mixes the advantages of mesh and tree architectures.The problems of skew reduction and variation-tolerance...