国家自然科学基金(60906004)

作品数：9被引量：5H指数：1
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Thermal effect of Ge_2Sb_2Te_5 in phase change memory device
《Chinese Physics B》2014年第8期121-124,共4页李俊焘 刘波 宋志棠 任堃 朱敏 徐佳 任佳栋 冯高明 任万春 童浩 
Project supported by the National Basic Research Program of China(Grant Nos.2010CB934300,2011CBA00607,and 2011CB9328004);the National Integrate Circuit Research Program of China(Grant No.2009ZX02023-003);the National Natural Science Foundation of China(Grant Nos.60906004,60906003,61006087,61076121,61176122,and 61106001);the Funds from the Science and Technology Council of Shanghai,China(Grant No.12nm0503701)
In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase chan...
关键词：phase change memory Ge2Sb2Te5 thermal effect failure analysis 
Mechanism of amorphous Ge_2Sb_2Te_5 removal during chemical mechanical planarization in acidic H_2O_2 slurry
《Chinese Physics B》2013年第1期547-551,共5页何敖东 宋志棠 刘波 钟旻 王良咏 吕业刚 封松林 
Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003,61006087, 61076121, 61176122, and 61106001);the Science and Technology Council of Shanghai, China (Grant Nos. 11DZ2261000 and 11QA1407800);the Chinese Academy of Sciences (Grant No. 20110490761)
In this paper, chemical mechanical planarization （CMP） of amorphous Ge2Sb2Te5 （a-GST） in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration ...
关键词：H2O2 chemical mechanical planarization Ge2Sb2Te5 
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material被引量：1
《Chinese Physics B》2012年第11期335-339,共5页任万春 刘波 宋志棠 向阳辉 王宗涛 张北超 封松林 
Project supported by the National Basic Research Program of China (Grant Nos.2010CB934300,2011CBA00607,and 2011CB932800);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004,60906003,61006087,and 61076121);the Science and Technology Council of Shanghai,China (Grant No. 1052nm07000)
Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film qualit...
关键词：deposit-etch deposit process single step deposit gap filling RE-DEPOSITION 
Germanium Nitride as a Buffer Layer for Phase Change Memory
《Chinese Physics Letters》2012年第10期171-173,共3页ZHANG Xu LIU Bo PENG Cheng RAO Feng ZHOU Xi-Lin SONG San-Nian WANG Liang-Yong CHENG Yan WU Liang-Cai YAO Dong-Ning SONG Zhi-Tang FENG Song-Lin 
Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906004,60906003,61006087,61076121);the Science and Technology Council of Shanghai(1052nm07000).
The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented.It is found that the adhesive strength between the Ge_(2)Sb_(2)Te_(5)(GST)layer and the layer below ...
关键词：STRENGTH LAYER THICK 
Sb Rich Ge_(2)Sb_(5)Te_(5) Alloy for High-Speed Phase Change Random Access Memory Applications
《Chinese Physics Letters》2012年第10期221-223,共3页ZHANG Qi SONG San-Nian XU Feng 
Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906003,60906004,61006087,61076121,61106055).
Sb rich Ge_(2)Sb_(5)Te_(5) materials are investigated for use as the storage medium for high-speed phase change memory(PCM).Compared with conventional Ge2Sb2Te5,Ge_(2)Sb_(5)Te_(5) films have a higher crystallisation t...
关键词：resistance FASTER RETENTION 
Scaling properties of phase-change line memory
《Chinese Physics B》2012年第9期554-558,共5页杜小锋 宋三年 宋志棠 刘卫丽 吕士龙 顾怡峰 薛维佳 席韡 
Project supported by the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Key Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00602, and 2011CB932800);the National Natural Science Foundation of China (Grant Nos. 60906003, 60906004, 61006087, and 61076121);the Science and Technology Council of Shanghai of China (Grant No. 1052nm07000)
Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage ...
关键词：phase-change memory line structure scaling properties three-dimensional simulation 
An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
《Chinese Physics Letters》2012年第3期235-238,共4页ZHANG Chao SONG Zhi-Tang WU Guan-Ping LIU Bo WANG Lian-Hong XU Jia LIU Yan WANG Lei YANG Zuo-Ya FENG Song-Lin 
Supported by the National Basic Research Program of China(2010CB934300,2011CB309602,2011CB932800);the National Integrated Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906004,60906003,61076121,61006087);the Science and Technology Council of Shanghai(1052nm07000).
An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13μm CMOS technology.By using dual trench isolated structure in the memory cell,it is feasible t...
关键词：TRENCH DIODE TRENCH 
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