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国家自然科学基金(61006070): 作品数：12被引量：45H指数：4; 导出分析报告; 相关作者：刘必慰陈建军孙永节陈书明梁斌更多>>; 相关机构：国防科学技术大学国防科技大学更多>>; 相关期刊：《Science China(Physics,Mechanics & Astronomy)》《Science China(Technological Sciences)》《Chinese Physics B》《物理学报》更多>>; 相关主题：SETQUENCHINGPDOPINGCMOS工艺更多>>; 相关领域：电子电信自动化与计算机技术化学工程航空宇航科学技术更多>>

Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS process被引量：5: 《Science China(Technological Sciences)》2013年第2期271-279,共9页HUANG PengCheng CHEN ShuMing CHEN JianJun LIU BiWei; supported by the National Natural Science Foundation of China (Grant Nos. 60836004 and 61006070); In this paper,we proposed a new n-channel MOS single event transient(SET) mitigation technique,which is called the open guard transistor(OGT) technique.This hardening scheme is compared with several classical n-channe...; 关键词：single event transient （SET） open guard transistor （OGT） charge collection hardening efficiency.

Parasitic bipolar amplification in a single event transient and its temperature dependence被引量：2: 《Chinese Physics B》2012年第9期607-612,共6页刘征陈书明陈建军秦军瑞刘蓉容; Project supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61076025, and 61006070);the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20104307120006); Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studi...; 关键词：single event transient parasitic bipolar amplification funnel-aided drift temperature dependence

基于DICE单元的抗SEU加固SRAM设计被引量：5: 《国防科技大学学报》2012年第4期158-163,共6页孙永节刘必慰; 国家自然科学基金重点项目(60836004);国家自然科学基金项目(61006070); DICE单元是一种有效的SEU加固方法,但是,基于DICE单元的SRAM在读写过程中发生的SEU失效以及其外围电路中发生的失效,仍然是加固SRAM中的薄弱环节。针对这些问题,提出了分离位线结构以解决DICE单元读写过程中的翻转问题,并采用双模冗余...; 关键词：SEU加固 SRAM DICE单元

Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process被引量：1: 《Science China(Information Sciences)》2012年第6期1461-1468,共8页QIN JunRui CHEN ShuMing LIU BiWei LIANG Bin CHEN JianJun; supported by National Natural Science Foundation of China(Grant Nos.60836004,61006070); Through revising the process of charge collection for reversed drain-bulk junction,a bias-dependent SPICE model is proposed which includes the bipolar amplification effect that cannot be ignored in PMOS.The model can ...; 关键词：SET SEU SPICE modeling parasitic bipolar transistor

3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET被引量：4: 《Science China(Technological Sciences)》2012年第6期1576-1580,共5页QIN JunRui CHEN ShuMing CHEN JianJun; supported by the National Natural Science Foundation of China (Grant Nos. 60836004,61006070,and 61076025); Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amo...; 关键词：FINFET single event effect single event transient charge collection

带有n+深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响被引量：4: 《物理学报》2012年第9期360-366,共7页刘必慰陈建军陈书明池雅庆; 国家自然科学基金重点项目(批准号:60836004);国家自然科学基金(批准号:61006070;60906014);教育部博士点基金(批准号:20104307120006)资助的课题~~; 基于三维TCAD器件模拟,研究了带有n^+深阱的90 nm三阱CMOS器件在重离子辐照下产生的电荷共享效应.研究结果表明在重离子辐照时,n^+深阱会导致寄生的NPN双极型晶体管触发,显著增强NMOS间的电荷共享,其放大因子达到双阱工艺中寄生PNP晶体...; 关键词：电荷共享单粒子效应 n^+深阱寄生双极型晶体管

The effect of P^+ deep well doping on SET pulse propagation被引量：7: 《Science China(Technological Sciences)》2012年第3期665-672,共8页QIN JunRui CHEN ShuMing LIU BiWei LIU FanYu CHEN JianJun; supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61006070, and 61076025); The change of P+ deep well doping will affect the charge collection of the active and passive devices in nano-technology,thus affecting the propagated single event transient(SET) pulsewidths in circuits.The propagated...; 关键词：P＋ deep well SET pulsewidths SET propagation QUENCHING charge collection

Recovery of single event upset in advanced complementary metal-oxide semiconductor static random access memory cells被引量：4: 《Chinese Physics B》2012年第2期624-628,共5页Qin Jun-Rui Chen Shu-Ming Liang Bin Liu Bi-Wei; supported by the State Key Program of the National Natural Science Foundation of China (Grant No.60836004);the National Natural Science Foundation of China (Grant Nos.61076025 and 61006070); Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi...; 关键词：single event upset multi-node charge collection static random access memory angulardependence

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology被引量：2: 《Chinese Physics B》2011年第12期517-524,共8页秦军瑞陈书明刘必慰刘征梁斌杜延康; Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004);the National Natural Science Foundation of China (Grant Nos. 61076025 and 61006070); Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus...; 关键词：substrate doping charge collection single event transient propagation bipolar amplification

Research on single event transient pulse quenching effect in 90 nm CMOS technology被引量：14: 《Science China(Technological Sciences)》2011年第11期3064-3069,共6页QIN JunRui CHEN ShuMing LIU BiWei CHEN JianJun LIANG Bin LIU Zheng; supported by the National Natural Science Foundation of China (Grant Nos. 60836004 and 61006070); Since single event transient pulse quenching can reduce the SET(single event transient) pulsewidths effectively,the charge collected by passive device should be maximized in order to minimize the propagated SET.From t...; 关键词：SET propagation radiation hardening by design charge collection charge share QUENCHING

国家自然科学基金(61006070)