国家重点基础研究发展计划(2010CB327503)

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相关期刊：《Journal of Semiconductors》《Chinese Physics B》《Chinese Physics Letters》更多>>
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Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs
《Journal of Semiconductors》2012年第9期60-64,共5页王建辉 王鑫华 庞磊 陈晓娟 金智 刘新宇 
supposed by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)
The impacts of varying layout geometries on the channel temperature of multi-finger AIGaN/GaN HEMTs are investigated by three-dimensional （3-D） thermal simulations. Micro-Raman thermography is selected to obtain a d...
关键词：AlGaN/GaN HEMTs thermal simulation thermal boundary resistance thermal management Raman spectroscopy 
A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE
《Journal of Semiconductors》2012年第1期52-55,共4页Ge Qin Chen xiaojuan Luo Weijun Yuan Tingting Pu Yan Liu Xinyu 
Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)
We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal...
关键词：KU-BAND A1GaN/GaN HEMTs IMPA output power PAE 
Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors
《Chinese Physics B》2011年第9期396-402,共7页蒲颜 庞磊 陈晓娟 袁婷婷 罗卫军 刘新宇 
Project supported by the National Basic Research Program of China (Grant No.2010CB327503);the National Natural Science Foundation of China (Grant No.60890191)
The current voltage （IV） characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current （DC） IV and pulsed IV measurements are performed to giv...
关键词：dispersion effects pulsed current voltage measurement TRAP SELF-HEATING 
A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier
《Journal of Semiconductors》2011年第8期70-73,共4页戈勤 陈晓娟 罗卫军 袁婷婷 庞磊 刘新宇 
Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)
A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-1...
关键词：KU-BAND AlGaN/GaN HEMTs power amplifier MONOLITHIC power density 
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
《Chinese Physics Letters》2011年第3期184-187,共4页HOU Qi-Feng WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei YANG Cui-Bai YIN Hai-Bo LI Jin-Min WANG Zhan-Guo 
Supported by the Knowledge Innovation Project of Chinese Academy of Sciences(Nos YYYJ-0701-02,ISCAS2008T01,ISCAS2009L01 and ISCAS2009L02);the National Natural Sciences Foundation of China(Nos 60890193 and 60906006);and the National Basic Research Program of China(Nos 2006CB604905 and 2010CB327503).
Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence.Intense yellow and blue luminescence bands are observed in semi-insulating GaN,while in n-GaN the yell...
关键词：GAN LUMINESCENCE YELLOW 
Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT
《Journal of Semiconductors》2010年第10期24-27,共4页蒲颜 王亮 袁婷婷 欧阳思华 庞磊 刘果果 罗卫军 刘新宇 
Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)
The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are di...
关键词：AlGaN/GaN HEMT multi-bias CV curves non-linear CV model 
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