SAPPHIRES

作品数：6被引量：2H指数：1
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相关领域：天文地球更多>>
相关作者：曾庆明赵永林李献杰周州刘玉贵更多>>
相关机构：河北半导体研究所更多>>
相关期刊：《Chinese Physics Letters》《电子元器件应用》《Acta Geochimica》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划更多>>
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The Mamfe Basin in the southern Benue trough extension between Cameroon and Nigeria:Gem origin and problem of lithostratigraphic nomenclature and marine transgression
《Acta Geochimica》2023年第3期495-516,共22页Milan Stafford Tchouatcha Primus Tamfuh Azinwi Christel Sobdjou Kemteu Augustin Desire Balla Ondoa Leopold Darlus Ngantchu Basil Azeh Anong Courage Gabvourta 
The Mamfe Basin has been the subject of many studies,but some debates persist,especially concerning the stratigraphic nomenclature,corundum origin,and marine transgression.The aims of this work are(1)to propose a new ...
关键词：LITHOSTRATIGRAPHY Marine transgression Heavy minerals SAPPHIRES Mamfe Basin Benue Trough 
GaN grown on nano-patterned sapphire substrates被引量：2
《Journal of Semiconductors》2015年第4期26-29,共4页孔静 冯美鑫 蔡金 王辉 王怀兵 杨辉 
supported by the Suzhou Nanojoin Photonics Co.,Ltd and the High-Tech Achievements Transformation of Jiangsu Province,China(No.BA2012010)
High-quality gallium nitride （GaN） film was grown on nano-pattemed sapphire substrates （NPSS） and investigated using XRD and SEM. It was found that the optimum thickness of the GaN bulter layer on the NPSS is 15 n...
关键词：GAN nano-patterned sapphires （NPSS） LED two-step growth process 
Effect of thickness on the microstructure of GaN films on Al_2 O_3 (0001) by laser molecular beam epitaxy
《Chinese Physics B》2011年第10期435-441,共7页刘莹莹 朱俊 罗文博 郝兰众 张鹰 李言荣 
supported by the Major State Basic Research Development Program of China (Grant No. 61363);the National Natural Science Foundation of China (Grant Nos. 50772019 and 61021061)
Heteroepitaxial GaN films are grown on sapphire （0001） substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that th...
关键词：reflection high energy electron diffraction thin films laser molecular beam epitaxy GaN sapphires 
Revelation of Causes of Colour Change in Beryllium-Treated Sapphires
《Chinese Physics Letters》2008年第6期1976-1979,共4页Pichet Limsuwan Siwaporn Meejoo Asanee Somdee Kheamrutai Thamaphat Treedej Kittiauchawal Atitaya Siripinyanond Jurek Krzystck 
Blue sapphires are treated with Be in oxidizing atmosphere to change the blue colour into yellow. Untreated and Be-treated samples are examined using laser ablation inductively coupled-plasma-mass spectrometry （LA-I...
关键词：supernova explosion proto-neutron star shock wave 
科利登推出具有6．4G bps测试能力的Sapphires测试系统
《电子元器件应用》2006年第7期131-131,共1页
来自美国加州苗必达市（Milpitas）的消息，科利登系统有限公司（Credence Systems Corporation）近日宣布：Sun Microsystems公司购买了科利登系统公司的、配置有D-6436的Sapphire^TM S的自动测试设备。实事上，D-6436是一款高性能高...
关键词：测试系统 测试能力 自动测试设备 科利登系统公司 Sun公司 4G 微处理器芯片 
AlGaN/GaN High Electron Mobility Transistors on Sapphires with f_(max) of 100GHz
《Journal of Semiconductors》2005年第11期2049-2052,共4页李献杰 曾庆明 周州 刘玉贵 乔树允 蔡道民 赵永林 蔡树军 
国家重点基础研究发展规划(批准号:51327030201);国家自然科学基金(批准号:60136020)资助项目~~
AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate vol...
关键词：AIGAN/GAN HEMT SAPPHIRE 
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