云南高校图书馆联盟文献共享服务平台- HETEROJUNCTION

HETEROJUNCTION: 作品数：1026被引量：1823H指数：17; 导出分析报告; 相关领域：电子电信电气工程更多>>; 相关作者：李娣施伟东区泽堂刘英贺捷更多>>; 相关机构：清华大学中国科学技术大学郑州大学厦门大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金广东省自然科学基金更多>>

Two-Dimensional Electron Gas in MoSi_(2)N_(4)/VSi_(2)N_(4)Heterojunction by First Principles Calculation: 《Chinese Physics Letters》2022年第12期57-64,共8页Ruiling Gao Chao Liu Le Fang Bixia Yao Wei Wu Qiling Xiao Shunbo Hu Yu Liu Heng Gao Shixun Cao Guangsheng Song Xiangjian Meng Xiaoshuang Chen Wei Ren; supported by the National Natural Science Foundation of China(Grant Nos.12074241,52130204,and 11929401);the Science and Technology Commission of Shanghai Municipality(Grant Nos.22XD1400900,20501130600,21JC1402600,and 22YF1413300);High Performance Computing Center,Shanghai University;Key Research Project of Zhejiang Lab(Grant No.2021PE0AC02);the supports from the open projects of Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials(Anhui University of Technology),Ministry of Education(Grant No.GFST2022KF08);State Key Laboratory of Surface Physics(Fudan University)(Grant No.KF202210);State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences(Grant No.SITP-NLIST-YB-2022-08);the support of China Scholarship Council。; Van der Waals(vdW)layered two-dimensional(2D)materials,which may have high carrier mobility,valley polarization,excellent mechanical properties and air stability,have been widely investigated before.We explore the pos...; 关键词：HETEROJUNCTION POLARIZATION METALLIC

CH_3NH_3 Formed by Electron Injection at Heterojunction Inducing Peculiar Properties of CH_3NH_3PbI_3 Material: 《Chinese Physics Letters》2019年第2期36-39,共4页Ao Zhang Yun-Lin Chen Chun-Xiu Zhang Jun Yan; Supported by the National Natural Science Foundation of China under Grant No 61875235;the Ph.D. Programs Foundation of Ministry of Education of China under Grant No 20130009110008;the Beijing Municipal Education Commission Project under Grant No KM201210015008; The effect of formed CH_3NH_3 at the heterojunction on properties of CH_3NH_3PbI_3 material is investigated based on experiment and theoretical calculation. Our calculation results show that the giant dielectric const...; 关键词：CH3NH3 FORMED by Electron Injection INDUCING PECULIAR Properties of CH3NH3PbI3 MATERIAL

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors: 《Chinese Physics Letters》2015年第12期113-116,共4页闫俊达王权王晓亮肖红领姜丽娟殷海波冯春王翠梅渠慎奇巩稼民张博李百泉王占国侯洵; Supported by the Knowledge Innovation Project of the Chinese Academy of Sciences;the National Natural Science Foundation of China under Grant Nos 61204017 and 61334002;the National Basic Research Program of China;the National Science and Technology Major Project of China; Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is...; 关键词：AlGaN Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors INGAN AlN

Electrically Pumped Ultraviolet Random Lasing from p-ZnO：As Based on p-ZnO/N-GaN Heterojunction: 《Chinese Physics Letters》2014年第5期179-182,共4页张源涛夏晓川伍斌史志锋杨帆杨小天张宝林杜国同; Supported by the National Basic Research Program of China under Grant No 2011CB302005, the National Natural Science Foundation of China under Grant Nos 61106003 and 61223005, the Science and Technology Development Project in Jilin Province under Grant Nos 20080124 and 20130204032GX, and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory under Grant No ZHD201204.; p-ZnO：As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO：As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical ...

Measurement of ZnO/Al_(2)O_(3) Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy: 《Chinese Physics Letters》2013年第11期192-194,共3页LEI Hong-Wen ZHANG Hong WANG Xue-Min ZHAO Yan YAN Da-Wei JIANG Zhong-Qian YAO Gang ZENG Ti-Xian WU Wei-Dong; Supported by the Major Instrumentation Special of the Ministry of Science and Technology of China under Grant No 2011YQ130018;Open Foundation of Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Sci-ence and Technology and Research Center of Laser Fusion,CAEP(No 12zxjk06);the National High-Technology Research and Development Program of China.; ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy.The band offsets of the ZnO/Al_(2)O_(3) heterojunction are studied by in situ x-ray photoelectron spectroscopy.The valence band of Al_(2)O_(...; 关键词：SPECTROSCOPY TOGETHER

Bulk Heterojunction Photovoltaic Devices Based on a Poly(2-Methoxy,5-Octoxy)-1,4-Phenylenevinylene-Single Walled Carbon Nanotube-ZnSe Quantum Dots Active Layer被引量：1: 《Chinese Physics Letters》2013年第10期187-190,共4页QU Jun-Rong ZHENG Jian-Bang WU Guang-Rong CAO Chong-De; Supported by the National Basic Research Program of China under Grant No 51171152.; A solution-processed bulk heterojunction photovoltaic cell is fabricated based on poly[(2-methoxy,5-octoxy)-1,4-phenylenevinylene](MOPPV)-single walled carbon nanotube(SWNT)-ZnSe quantum dots.The surface morphology sh...; 关键词：ZNSE Active Carbon

The Rectifying Property and Photovoltaic Effect in the La_(0.8)Ag_(0.2)MnO_(3)/SrTiO_(3)-Nb Heterojunction: 《Chinese Physics Letters》2013年第6期182-185,共4页WANG Jian-Yuan ZHAI Wei JIN Ke-Xin CHEN Chang-Le; Supported by the National Natural Science Foundation of China under Grant Nos 61078057 and 51172183;the National Natural Science Foundation of Shaanxi Province in China under Grant No 2012JQ8013;the Aviation Foundation of China(No 2011ZF53065);NPU Foundation for Fundamental Research(Nos JC201155 and JC20120246).; A p-n junction composed of Ag^(+)-doped manganite La_(0.8)Ag_(0.2)MnO_(3)(LAMO)and Nb-0.5wt%-doped SrTiO_(3)(STON)was fabricated using the pulsed laser deposition method.The heterojunction exhibits a good rectifying p...; 关键词：HETEROJUNCTION laser DIFFUSION

The Valence Band Offset of an Al_(0.17)Ga_(0.83)N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy: 《Chinese Physics Letters》2013年第5期124-126,共3页WAN Xiao-Jia WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei FENG Chun DENG Qing-Wen QU Shen-Qi ZHANG Jing-Wen HOU Xun CAI Shu-Jun FENG Zhi-Hong; the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No YYY-0701-02;the National Natural Science Foundation of China under Grant Nos 60890193 and 61106014;the National Basic Research Program of China under Grant Nos 2010CB327503 and 2012CB619303;the High-Technology Research and Development Program of China under Grant No 2011AA050514;the National Science and Technology Major Project of China。; The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset(CBO)of~0.22 eV is o...; 关键词：N/Ga HETEROJUNCTION SPECTROSCOPY

High Sensitivity Magnetic Field Sensors Based on Nano-Polysilicon Thin-Film Transistors: 《Chinese Physics Letters》2012年第11期215-218,共4页ZHAO Xiao-Feng WEN Dian-Zhong ZHUANG Cui-Cui LIU Gang WANG Zhi-Qiang; Supported by the National Natural Science Foundation of China No 61006057;the Foundation for University Young Key Teacher of Heilongjiang Province under Grant No 1251G046;the Excellent Youth Foundation of Heilongjiang University under Grant No JCL201007.; A high-sensitivity magnetic field sensor based on the nano-polysilicon thin film transistors is proposed to adopt the nano-polysilicon thin films and the nano-polysilicon/single silicon heterojunction interfaces as th...; 关键词：HETEROJUNCTION FILM RESISTIVITY

Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering: 《Chinese Physics Letters》2012年第10期190-192,共3页WANG Hui ZHANG Bao-Lin WU Guo-Guang WU Chao SHI Zhi-Feng ZHAO Yang WANG Jin MA Yan DU Guo-Tong DONG Xin; Supported by the National Basic Research Program of China(2011CB302005);the National Natural Science Foundation of China(61006006,60877020,60976010);the Science and Technology Development Project in Jilin Province(20100170);the Fundamental Research Funds for the Central Universities(dut11rc(3)45).; The p-NiO thin film is prepared by radio frequency magnetron sputtering on the n-GaN/sapphire substrate to form p-NiO/n-GaN heterojunction diodes.The structural,optical and electrical properties of the p-NiO thin film...; 关键词：temperature HETEROJUNCTION SAPPHIRE

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