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作品数：139被引量：261H指数：9
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相关机构：清华大学东南大学中国石油大学（华东）中南民族大学更多>>
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Frequency equation for the submicron CMOS ring oscillator using the first order characterization
《Journal of Semiconductors》2018年第5期64-69,共6页Aravinda Koithyar T.K.Ramesh 
By utilizing the first order behavior of the device,an equation for the frequency of operation of the submicron CMOS ring oscillator is presented.A 5-stage ring oscillator is utilized as the initial design,with differ...
关键词：ring oscillator stage delay SPICE model RC model second order effects 
Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications
《Journal of Semiconductors》2016年第4期39-43,共5页Nacereddine Lakhdar Brahim Lakehal 
We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave...
关键词：gate engineering GaAs MESFET cut-off frequency short channel effects（SCEs） work function modeling 
Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices被引量：1
《Journal of Semiconductors》2015年第11期39-43,共5页武唯康 安霞 谭斐 冯慧 陈叶华 刘静静 张兴 黄如 
The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are o...
关键词：heavy ion displacement damages PDSOI performance degradation 
Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs被引量：2
《Journal of Semiconductors》2013年第1期39-44,共6页梅博 毕津顺 卜建辉 韩郑生 
A bimodal effect of transconductance was observed in narrow channel PDSOI sub-micron H-gate PMOSFETs,which was accompanied with the degeneration of device performance.This paper presents a study of the transconductanc...
关键词：TRANSCONDUCTANCE threshold voltage work function SILICON-ON-INSULATOR 
Worst-case total dose radiation effect in deep-submicron SRAM circuits被引量：3
《Journal of Semiconductors》2012年第7期121-125,共5页丁李利 姚志斌 郭红霞 陈伟 范如玉 
supported by National Natural Science Foundation of China(No.11175271)
The worst-case radiation effect in deep-submicron SRAM （static random access memory） circuits is studied through theoretical analysis and experimental validation. Detailed analysis about the radiation effect in diff...
关键词：worst-case test scheme total dose effect deep-submicron SRAM circuits 
A Submicron InGaAs/InP Heterojunction Bipolar Transistor with f_t of 238GHz
《Journal of Semiconductors》2008年第10期1898-1901,共4页金智 程伟 刘新宇 徐安怀 齐鸣 
国家高技术研究发展计划资助项目(批准号:2002CB311902)~~
A non-micro-air-bridge InP-based heterojunction bipolar transistor （HBT） is fabricated. A very small emitter side etching （〈100nm） is developed and makes a submicron InP-based HBT possible. The current gain cutof...
关键词：lnP heterojunction bipolar transistor PLANARIZATION high frequency 
An Improved Description of Characteristics Length in Substrate Current Model for Submicron and Deep-Submicron LDD MOSFET's
《Journal of Semiconductors》2004年第9期1084-1090,共7页于春利 杨林安 郝跃 
国家自然科学基金资助项目 (批准号 :60 2 0 60 0 6)~~
A novel substrate current model is proposed for submicron and deep-submicron li ghtly-doped-drain (LDD) n-MOSFET,with the emphasis on accurate description of the characteristics length by taking the effects of channe...
关键词：LDD MOSFET substra te current characteristics length maximum lateral electric field 
Challenges to Data-Path Physical Design Inside SOC被引量：2
《Journal of Semiconductors》2002年第8期785-793,共9页经彤 洪先龙 蔡懿慈 许静宇 杨长旗 张轶谦 周强 吴为民 
清华大学骨干人才支持计划 ( No.[2 0 0 2 ] 4);国家重点基础研究发展规划 ( No.G-19980 30 40 3)资助项目~~
Previously,a single data-path stack was adequate for data-path chips,and the complexity and size of the data-path was comparatively small.As current data-path chips,such as system-on-a-chip (SOC),become more complex,m...
关键词：physical design data-path bit-sliced structure SYSTEM-ON-A-CHIP giga-scale integrated circuits very-deep-submicron 
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