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DOUBLE-GATE: 作品数：38被引量：12H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：薩支唐揭斌斌贾仁需刘红侠栾苏珍更多>>; 相关机构：北京大学西安电子科技大学中国科学院中国科学院微电子研究所更多>>; 相关期刊：《Chinese Physics Letters》《Journal of Semiconductors》《World Journal of Nano Science and Engineering》《Chinese Physics B》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金国防科技技术预先研究基金更多>>

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors被引量：1: 《Science China(Information Sciences)》2020年第12期274-276,共3页Guoliang TIAN Jinshun BI Gaobo XU Kai XI Xueqin YANG Majumdar SANDIP Huaxiang YIN Qiuxia XU Wenwu WANG; supported in part by National Natural Science Foundation of China(Grant Nos.2019B010145001,616340084,61821091,61888102)。; Dear editor,Ferroelectric tunneling FETs(FeTFETs)are the increasingly significant research topics on novel low-power electronic devices[1,2],because ferroelectric materials’negative capacitance effect is helpful to b...; 关键词：TUNNELING FERROELECTRIC effect

Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis: 《Chinese Physics B》2020年第10期556-565,共10页Hui-Fang Xu Xin-Feng Han Wen Sun; Project supported by the Natural Science Research Key Project of Universities of Anhui Province,China(Grant No.KJ2017A502);the Introduced Talent Project of Anhui Science and Technology University,China(Grant No.DQYJ201603);the Excellent Talents Supported Project of Colleges and Universities,China(Grant No.gxyq2018048)。; The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the...; 关键词：dopingless tunnel field effect transistor line tunneling lincarity parameters

A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure: 《Journal of Semiconductors》2019年第12期135-141,共7页C.Usha P.Vimala; supported by Women Scientist Scheme-A, Department of Science and Technology, New Delhi, Government of India, under the Grant SR/WOS-A/ET-5/2017; This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a p...; 关键词：triple-material double-gate TFET surface potential lateral and vertical electric field drain current TCAD simulation

Inverse Stone-Thrower-Wales defect and transport properties of 9AGNR double-gate graphene nanoribbon FETs: 《Journal of Central South University》2019年第11期2943-2952,共10页Mohammad Bagher NASROLLAHNEJAD Parviz KESHAVARZI; Defect-based engineering of carbon nanostructures is becoming an important and powerful method to modify the electron transport properties in graphene nanoribbon FETs. In this paper, the impact of the position and sym...; 关键词：inverse Stone-Thrower-Wales defect electronic transport properties graphene nanoribbon tight binding NEGF formalism

Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric被引量：1: 《Journal of Semiconductors》2018年第10期39-45,共7页Huifang Xu; Project supported by the University Natural Science Research Key Project of Anhui Province(No.KJ2017A502);the Talents Project of Anhui Science and Technology University(No.DQYJ201603);the Excellent Talents Supported Project of Colleges and Universities(No.gxyq2018048); Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor（NC DG TFET） with a ferroelectric gate dielectric in this paper. The model accurately calculates the channel poten...; 关键词：ferroelectric gate dielectric double-gate tunnel field-effect transistor analytical model

Design and simulation of nanoscale double-gate TFET/tunnel CNTFET: 《Journal of Semiconductors》2018年第4期34-38,共5页Shashi Bala Mamta Khosla; A double-gate tunnel field-effect transistor （DG tunnel FET） has been designed and investigated for various channel materials such as silicon （Si）, gallium arsenide （GaAs）, alminium gallium arsenide （A1xGa1-xAs...; 关键词：band-to-band tunneling （BTBT） double gate （DG） silicon （Si） gallium arsenide （GaAs） aluminum gallium arsenide （AlxGa1 xAs） tunnel field effect transistor （FET） carbon nanotube （CNT）

Double-gate-all-around tunnel field-effect transistor: 《Chinese Physics B》2017年第7期449-453,共5页张文豪李尊朝关云鹤张也非; Project supported by the National Natural Science Foundation of China(Grant Nos.61176038 and 61474093);the Science and Technology Planning Project of Guangdong Province,China(Grant No.2015A010103002);the Technology Development Program of Shanxi Province,China(Grant No.2016GY075); In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional...; 关键词：gate-all-around（GAA） tunnel field effect transistor（TFET） drain induced barrier thinning（DIBT）

Performance analysis of SiGe double-gate N-MOSFET: 《Journal of Semiconductors》2017年第4期38-44,共7页A.Singh D.Kapoor R.Sharma; The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate（SG） MOSFETs but also provides the better replacement for future technology.In this paper...; 关键词：double gate MOSFET DIBL GIDL volume inversion SiGe Genius tool

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers: 《Journal of Semiconductors》2017年第2期51-58,共8页Huifang Xu Yuehua Dai; Project supported by the National Natural Science Foundation of China(No.61376106);the University Natural Science Research Key Project of Anhui Province(No.KJ2016A169);the Introduced Talents Project of Anhui Science and Technology University; A two-dimensional analytical model of double-gate（DG） tunneling field-effect transistors（TFETs） with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potentia...; 关键词：double-gate tunnel field effect transistor（TFET） interface trapped charges analytical model

Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs: 《Chinese Physics B》2016年第3期440-444,共5页辛艳辉袁胜刘明堂刘红侠袁合才; Project supported by the National Natural Science Foundation of China(Grant Nos.61376099,11235008,and 61205003); The two-dimensional models for symmetrical double-material double-gate （DM-DG） strained Si （s-Si） metal-oxide semiconductor field effect transistors （MOSFETs） are presented. The surface potential and the surface...; 关键词：double-material double-gate MOSFET strained Si threshold voltage subthreshold current

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