SUPERJUNCTION

作品数：18被引量：21H指数：3
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相关领域：电子电信更多>>
相关作者：李肇基方健乔明黄淮吴郁更多>>
相关机构：电子科技大学北京工业大学更多>>
相关期刊：《物理学报》《Journal of Semiconductors》《The Journal of China Universities of Posts and Telecommunications》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家教育部博士点基金更多>>
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Recent developments in superjunction power devices
《Journal of Semiconductors》2024年第11期18-35,共18页Chao Ma Weizhong Chen Teng Liu Wentong Zhang Bo Zhang 
Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks through th...
关键词：super junction silicon limit power semiconductor device design theory 
A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance
《Journal of Semiconductors》2023年第5期53-61,共9页Moufu Kong Zewei Hu Ronghe Yan Bo Yi Bingke Zhang Hongqiang Yang 
supported in part by the National Natural Science Foundation of China(Grant No.61974015);Key R&D Project of Science and Technology Plan of the Sichuan province(Grant No.2021YFG0139);the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201806)。
A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S...
关键词：SIC MOSFET specific on-resistance breakdown voltage HIGH-K SUPERJUNCTION switching performance reverse recovery characteristic 
A review of manufacturing technologies for silicon carbide superjunction devices被引量：1
《Journal of Semiconductors》2021年第6期19-24,共6页Run Tian Chao Ma Jingmin Wu Zhiyu Guo Xiang Yang Zhongchao Fan 
supported by the National Key Research and Development Program(No.2016YFB0400500);the Key Research and Development Projects in Guangdong Province(No.2019B010144001)。
Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect tra...
关键词：silicon carbide(SiC) power semiconductor devices superjunction(SJ) process development 
A superjunction structure using high-k insulator for power devices:theory and optimization
《Journal of Semiconductors》2016年第6期116-121,共6页黄铭敏 陈星弼 
supported by the National Natural Science Foundation of China(No.51237001)
A superjunction（SJ） structure using a high-k（Hk） insulator is studied and optimized by using an analytic model.Results by using the proposed model match well with that of numerical calculations.Numerical calculati...
关键词：high-k（Hk） superjunction MOSFET specific on-resistance charge imbalance 
A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure
《Journal of Semiconductors》2013年第12期30-33,共4页李冰华 江兴川 李志贵 林信南 
Project supported by the Guangdong Science&Technology Project(No.2010B090400443);the Shenzhen Science&Technology Foundation(Nos.JC201005270276A,ZD201006110039A);the Longgang Science&Technology Developing Foundation
A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the n...
关键词：accumulation channel semi-superjunction structure BV SCSOA 
An analytical model of the electric field distributions of buried superjunction devices
《Journal of Semiconductors》2013年第6期68-71,共4页黄海猛 陈星弼 
An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green＇s function approach,is derived.An accurate approximation of the exact anal...
关键词：analytical model superjunction devices electric field distributions breakdown voltage 
Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth被引量：1
《Journal of Semiconductors》2010年第8期48-52,共5页李泽宏 任敏 张波 马俊 胡涛 张帅 王非 陈俭 
Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth,based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited.The breakdown voltages of the fa...
关键词：SUPERJUNCTION deep trench etching epitaxial growth power MOSFET 
An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure被引量：1
《Journal of Semiconductors》2010年第4期17-19,共3页蒲红斌 曹琳 任杰 陈治明 南雅公 
supported by the National Natural Science Foundation of China(No.60876050);the Special Scientific Research Project of Shaan Xi Provincial Department of Education,China(No.08JK367).
An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance ...
关键词：SiC/SiCGe SUPERJUNCTION optically controlled transistor 
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